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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7932TR2PBF

Name: IRFH7932TR2PBF
Brand: Infineon Technologies
SKU: IRFH7932TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7932TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH7932TR2PBF.pdf

Description:: MOSFET N-CH 30V 24A PQFN56

Quantity:: RFQ Add To RFQ list

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Inventory:5,747

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Product details

Overview

IRFH7932TR2PBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel PQFN Power MOSFET optimized as a synchronous rectifier in isolated DC-DC converters and high-efficiency notebook CPU power stages. It delivers 3.3 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 104 A continuous drain current at T_A = 25°C, enabling high-density, low-loss power conversion in space-constrained networking and portable computing systems.

For engineers reviewing the IRFH7932TR2PBF datasheet, IRFH7932TR2PBF pinout, IRFH7932TR2PBF application, or IRFH7932TR2PBF equivalent, key selection criteria include its 2.2°C/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness, PQFN 5 mm × 6 mm package with large source lead for solder reliability, and verified performance under 4.5 V gate drive in synchronous buck topologies.

Technical Context

This HEXFET device uses planar silicon process technology to achieve ultra-low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (11 nC / 11.5 nC typical), minimizing Miller-induced shoot-through risk in synchronous rectification. Its body diode exhibits 21–32 ns reverse recovery time and 33–50 nC Q_rr, supporting high-frequency operation up to 1 MHz in resonant and hard-switched converters.

The MOSFET is characterized across temperature for stable gate threshold (1.35–2.35 V) and positive R_DS(on) temperature coefficient, enabling inherent current sharing in paralleled configurations. Thermal design is supported by fully specified R_θJC = 2.2°C/W and R_θJA = 37°C/W, validated under JEDEC-standard PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in telecom and notebook power supplies.
R_DS(on) max	3.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for >95% efficiency in 12 V → 1.0 V VRMs.
Q_g	34 nC - Low gate charge reduces driver power and allows use of compact gate drivers like IR11672 in high-frequency designs.
I_D cont @ T_A = 25°C	104 A - Supports high-current single-phase CPU core power delivery without forced airflow.
R_θJC	2.2°C/W - Enables direct thermal coupling to heatsink or copper plane, limiting junction rise to ≤22°C at 10 W dissipation.
Q_rr	33–50 nC - Quantified reverse recovery charge ensures predictable turn-on loss and EMI behavior in synchronous rectifier mode.

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad, 8-pin layout (3×2+2), optimized for low-inductance source connection and high-current routing. Pin 1 marked via laser top-side marking; no die attach paddle exposed on bottom.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Source)	Source terminal (common)	All even-numbered pins and outer perimeter pins are internally tied to source - enables parallel low-inductance PCB routing and thermal spreading.
Pin 8 (Drain)	Drain terminal	Single dedicated drain pin located at corner - minimizes loop inductance in high-di/dt synchronous rectifier paths.
Pin 1 (Gate)	Gate terminal	Isolated gate input with 0.7 Ω internal gate resistance - suppresses ringing and simplifies external gate resistor selection.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	3.9 mΩ - Ensures robust conduction in 5 V gate-drive systems (e.g., Intel DrMOS controllers) without derating.
100% Avalanche Tested	E_AS = 70 mJ @ I_AS = 20 A - Guarantees survivability during unclamped inductive switching events in DC-DC converters.
Lead-Free & Halogen-Free	Qualified to 260°C reflow - Complies with IPC-J-STD-020D and RoHS, eliminating tin whisker risk in long-life infrastructure equipment.
Large Source Lead	Multi-pin source configuration - Reduces current density per bond wire and improves solder joint fatigue life under thermal cycling.

Applications

Notebook CPU Core Power Stage

Telecom Isolated DC-DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulator supplying modern x86 processors (e.g., Intel Core i7/i9) with dynamic load steps up to 200 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, replacing Schottky diodes to eliminate forward voltage drop and reduce heat generation.

Use Value: Achieves ≥96% efficiency at 1.0 V/50 A output with <1.5°C junction rise above ambient, enabling fanless thermal design.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated flyback or active clamp forward converters for 5G base station power modules.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch operating in self-driven or controller-synchronized mode to replace discrete diodes.

Use Value: Reduces secondary-side conduction loss by 65% vs. 40 V Schottky, improving full-load efficiency from 89% to 93.5%.

Networking Switch ASIC Power

Industrial PLC DC Power Distribution

Use Scenario: 3.3 V or 5 V intermediate bus converter powering high-speed SerDes lanes and FPGA I/O banks in 10/25/100 GbE switches.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology, driven by integrated controller with 1 MHz switching frequency.

Use Value: Gate charge of 34 nC enables clean 10 ns rise/fall times at 1 MHz, minimizing switching loss while maintaining EMI compliance.

Use Scenario: Input protection and hot-swap control in 24 V industrial PLC backplane power distribution, requiring robust short-circuit handling.

IC Role / Device Role / Timing Role: Low-side load switch with integrated current sensing and fault reporting, leveraging low R_DS(on) for minimal voltage drop.

Use Value: 3.3 mΩ on-resistance limits voltage drop to <80 mV at 24 A, preserving system-level voltage regulation margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TR2PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 28 nC; same PQFN 5×6 package	Slightly higher conduction loss but lower gate drive energy - better suited for 500 kHz–1 MHz fixed-frequency designs with light-load efficiency focus.	Select when gate driver supply is limited or when prioritizing light-load efficiency over peak current capability.
SiR626DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 42 nC; PowerPAK® 5×6 package	Lower R_DS(on) but higher Q_g and different pinout - requires PCB redesign and increases driver stress in high-dV/dt environments.	Choose only if absolute lowest conduction loss is required and board layout can accommodate revised source/drain routing.

Compared with IRFH7107TR2PBF and SiR626DP-T1-GE3, IRFH7932TR2PBF offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness - making it preferred for high-reliability, high-current synchronous rectifier roles where both efficiency and fault tolerance are critical.

Availability

IRFH7932TR2PBF is available at Aetrix Electronics and suitable for notebook CPU power delivery, telecom DC-DC converters, and industrial PLC power distribution requiring stable component supply and long-term lifecycle support.

Supply support for IRFH7932TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's TrenchStop™ and HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum safe operating frequency for IRFH7932TR2PBF in a synchronous buck converter?

IRFH7932TR2PBF supports reliable operation up to 1 MHz in synchronous buck topologies, validated by its 20 ns turn-on delay, 48 ns rise time, and 20 ns fall time at V_DS = 15 V, I_D = 20 A, and R_G = 1.8 Ω. Above 1 MHz, switching losses increase significantly due to Q_sw = 15 nC and C_iss = 4270 pF, requiring careful gate drive optimization and thermal management.

Does IRFH7932TR2PBF require a negative gate voltage for safe turn-off in high dv/dt environments?

No - IRFH7932TR2PBF has a gate threshold voltage of 1.35–2.35 V and is designed for standard 0–10 V or 0–12 V gate drive. Its 0.7 Ω internal gate resistance and low Crss (420 pF) provide inherent immunity to false turn-on; negative gate bias is unnecessary unless operating in extreme >50 V/ns dV/dt conditions with marginal gate drive strength.

Can IRFH7932TR2PBF be paralleled with identical units for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient (0.021 V/°C) and matched transfer characteristics enable stable current sharing. Parallel operation requires symmetrical PCB layout, equal gate trace lengths, and individual 1–2 Ω gate resistors to damp oscillation. Derate total current by 15% for thermal margin in sealed enclosures.

What is the recommended minimum solder paste stencil aperture for the PQFN 5×6 mm thermal pad?

A 0.15 mm thick stencil with 80% area ratio (e.g., 4.0 mm × 4.0 mm aperture) is recommended for the exposed thermal pad. This ensures sufficient solder volume for mechanical reliability and thermal performance while preventing solder bridging to adjacent pins. Reflow profile must meet JEDEC J-STD-020D peak temperature of 260°C for 30 seconds maximum.

IRFH7932TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4270 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH7932TR2PBF FAQ

1.How can I place an order for IRFH7932TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7932TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7932TR2PBF reliable?

The price and inventory of IRFH7932TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7932TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7932TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7932TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7932TR2PBF?

IRFH7932TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7932TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7932TR2PBF?

For technical support, including IRFH7932TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7932TR2PBF requirements.

6.How does Aetrix verify that IRFH7932TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7932TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7932TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7932TR2PBF?

All IRFH7932TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7932TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7932TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7932TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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