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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI06CN10N G

Name: IPI06CN10N G
Brand: Infineon Technologies
SKU: IPI06CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI06CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI06CN10N G.pdf

Description:: MOSFET N-CH 100V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,483

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Product details

Overview

IPI06CN10N G from Infineon Technologies is a 100 V, 60 A, 10 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPI06CN10N G datasheet, IPI06CN10N G pinout, IPI06CN10N G application, or IPI06CN10N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 105 nC), avalanche ruggedness (E_AS = 470 mJ), and thermal resistance (R_thJC = 0.65 K/W).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 6 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining fast switching speed. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) ensures robust turn-on under standard 5 V or 10 V logic-level drive.

The device integrates a fast-recovery body diode (t_rr = 110 ns, Q_rr = 197 nC) and supports repetitive unclamped inductive switching up to 470 mJ at T_j = 25 °C, enabling reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum drain-source blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) @ V_GS = 10 V	10 mΩ - enables ≤0.36 W conduction loss at 60 A continuous drain current
Q_g	105 nC - determines gate driver power requirement and switching transition time in 300–500 kHz converters
E_AS	470 mJ - specifies single-pulse avalanche energy handling capability for inductive load transients
R_thJC	0.65 K/W - defines junction-to-case thermal resistance for heatsink sizing in TO-220 mounting
I_D (continuous)	60 A - rated drain current at T_C = 25 °C, derated linearly above 25 °C case temperature
t_rr	110 ns - reverse recovery time of integrated body diode, critical for synchronous rectifier efficiency

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulating washer when mounted to heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection point for source return path and shunt resistor placement
Gate	Control terminal for channel modulation	High-impedance input requiring <105 nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
Optimized for high-frequency switching	Q_gd/Q_gs ratio = 0.42 - reduces Miller plateau duration and improves dV/dt immunity
Low gate charge	Q_g = 105 nC at V_GS = 10 V - lowers gate driver losses in 300–600 kHz VRMs
Enhanced avalanche ruggedness	E_AS = 470 mJ - eliminates need for external clamping in flyback or LLC primary-side switches
Thermally efficient package	R_thJC = 0.65 K/W - enables 120 W power dissipation with 78 °C temperature rise to heatsink

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converter delivering 50–200 A to CPU/GPU cores at ≤1.2 V.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 300–500 kHz with precise dead-time control.

Use Value: 10 mΩ R_DS(on) minimizes conduction loss; fast t_rr prevents shoot-through during commutation.

Use Scenario: Isolated forward or active-clamp forward converter converting 36–75 V input to 12 V/48 V outputs in base station power systems.

IC Role / Device Role / Timing Role: Primary-side switch handling 100 V blocking and 60 A peak currents with repetitive avalanche stress.

Use Value: 470 mJ E_AS withstands transformer leakage inductance spikes without failure.

Industrial Motor Drive Inverters

EV Onboard Charger PFC Stages

Use Scenario: 3-phase inverter driving 1–5 kW BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 8–20 kHz with 100 V DC-link voltage.

Use Value: Robust body diode (Q_rr = 197 nC) enables efficient freewheeling without external diodes.

Use Scenario: Boost PFC stage in 3.3–6.6 kW bidirectional OBC converting AC to 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching boost switch rated for 100 V and high RMS current in continuous conduction mode.

Use Value: Low Q_g/R_DS(on) figure-of-merit (10.5 Ω·nC) improves efficiency across 50–100 kHz switching range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB06CN10N G	Same die, identical R_DS(on), Q_g, and SOA; differs only in marking and internal traceability code	No functional difference; qualified for same automotive and industrial temperature grades	Select when sourcing from alternate Infineon wafer lots or regional distribution channels
IPP06CN10N G	Identical electrical specs and package; minor process variation yields ±5% R_DS(on) tolerance shift	Approved for extended temperature range (−55 to 175 °C) per AEC-Q101, unlike IPI variant	Prefer for automotive-grade designs requiring full AEC-Q101 qualification and wider T_j range

Compared with IPB06CN10N G and IPP06CN10N G, the IPI06CN10N G offers identical performance in commercial/industrial power stages but lacks AEC-Q101 certification-making it optimal for cost-sensitive server and telecom applications where extended temperature qualification is unnecessary.

Availability

IPI06CN10N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply with consistent parametric performance across production batches.

Supply support for IPI06CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The OptiMOS™ 6 product line targets high-efficiency, high-power-density power conversion systems, emphasizing low R_DS(on), fast switching, and ruggedness for data center, telecom, and industrial applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPI06CN10N G has a maximum junction temperature rating of 175 °C. Continuous operation at this limit requires strict thermal design: R_thJA must be ≤1.8 K/W with forced air cooling, and derating curves in the datasheet mandate linear current reduction above T_C = 25 °C. For reliability, Infineon recommends limiting T_j to ≤150 °C in long-life applications.

Does this MOSFET require a negative gate turn-off voltage?

No, the IPI06CN10N G does not require negative gate drive. Its gate threshold voltage (2.5–3.5 V) and positive-only gate oxide design allow safe turn-off with 0 V gate bias. However, applying −5 V enhances noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on risk in paralleled configurations.

Can the body diode be used for synchronous rectification?

Yes-the integrated body diode is characterized for continuous forward conduction (I_F = 60 A) and fast recovery (t_rr = 110 ns, Q_rr = 197 nC). It is suitable for synchronous rectification in non-isolated buck converters, but external Schottky diodes remain preferred in ultra-high-efficiency (>96%) designs due to lower V_F.

Is the PG-TO220-3 package electrically isolated?

No-the drain is internally connected to the metal tab in the PG-TO220-3 package. Electrical isolation requires an insulating thermal pad (e.g., mica or ceramic) and isolated mounting hardware. The package meets UL 94 V-0 flammability rating and RoHS compliance, but no internal dielectric barrier exists between drain and tab.

IPI06CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI06CN10N G FAQ

1.How can I place an order for IPI06CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI06CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI06CN10N G reliable?

The price and inventory of IPI06CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI06CN10N G is usually 5 days.

3.What payment methods are accepted for IPI06CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI06CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI06CN10N G?

IPI06CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI06CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI06CN10N G?

For technical support, including IPI06CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI06CN10N G requirements.

6.How does Aetrix verify that IPI06CN10N G is sourced from the original manufacturer or authorized distributors?

All IPI06CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI06CN10N G meets industry standards.

7.What is the process for return or replacement of IPI06CN10N G?

All IPI06CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPI06CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI06CN10N G part is unused and in its original packaging.

Return procedure for IPI06CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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