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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD5N03LAG

Name: IPD5N03LAG
Brand: Infineon Technologies
SKU: IPD5N03LAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD5N03LAG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD5N03LAG.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

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Product details

Overview

IPD5N03LAG from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 4.5 mΩ R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, low gate charge (Q_g = 17–22 nC), and optimized FOM for high-frequency DC/DC converters.

For engineers reviewing the IPD5N03LAG datasheet, IPD5N03LAG pinout, IPD5N03LAG application, or IPD5N03LAG equivalent, this device is selected for synchronous rectification, motor drive half-bridges, and industrial power supplies where low conduction loss, fast switching, and thermal robustness are critical.

Technical Context

This MOSFET employs a trench-based OptiMOS®2 process optimized for logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V) and low R_DS(on) × Q_g figure-of-merit. Its 1.8 K/W junction-to-case thermal resistance enables high-power operation on minimal PCB copper area.

Dynamic performance includes C_iss = 2093–2653 pF, t_r = 7.2–11 ns, and t_f = 4.6–6.9 ns under standard test conditions (V_DD = 15 V, I_D = 25 A, R_G = 2.7 Ω), supporting efficient hard-switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for low-voltage power rails (e.g., 12 V input systems)
R_DS(on) max	5.2 mΩ @ V_GS = 10 V, I_D = 50 A - Enables ≤2.6 W conduction loss at full load
I_D cont.	50 A @ T_C = 25 °C - Sustains high-current output stages without forced air cooling
Q_g	17–22 nC - Reduces gate driver power demand and switching energy loss
R_thJC	1.8 K/W - Allows direct thermal coupling to heatsink or copper pour for stable 175 °C operation
E_AS	225 mJ @ I_D = 45 A - Supports unclamped inductive switching in motor control and SMPS
V_GS(th)	1.2–2.0 V - Fully enhances with standard 3.3 V or 5 V logic-level microcontroller outputs

Pinout & Package

IPD5N03LAG uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard DPAK configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives logic-level voltage to modulate channel conductivity; low input capacitance (C_iss ≈ 2.3 nF) eases driver selection
Pin 2 (Drain)	High-side power terminal	Exposed metal tab - must be soldered to ≥6 cm² copper area for thermal management and current return path
Pin 3 (Source)	Reference node for gate drive	Provides local ground reference for gate loop; critical for minimizing switching noise and shoot-through risk

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU GPIOs - eliminates need for level-shifting or dedicated gate drivers
Low R_DS(on) × Q_g FOM	~23 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300–500 kHz DC/DC converters
175 °C rated junction	Enables operation in sealed enclosures or high-ambient environments without derating below 100% load
Robust body diode	V_SD = 0.92–1.2 V @ 50 A - supports synchronous rectification and freewheeling with low forward loss

Applications

Server VRM Power Stage

Automotive Body Control Module

Use Scenario: High-current, high-efficiency buck converter supplying core voltage to Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase VRM; switched at 300–600 kHz with precise dead-time control.

Use Value: 4.5 mΩ R_DS(on) minimizes I²R loss at >100 A per phase; low Q_g reduces gate drive power and EMI.

Use Scenario: Load switching for headlights, HVAC fans, and window lift motors in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by automotive MCU with 5 V GPIOs.

Use Value: Logic-level threshold ensures reliable turn-on across battery voltage range (9–16 V); 175 °C rating withstands under-hood thermal stress.

Industrial PLC Output Driver

USB-C PD Power Path

Use Scenario: Solid-state relay replacement for programmable digital outputs driving solenoids and contactors.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated avalanche energy handling (225 mJ).

Use Value: Eliminates external snubbers for inductive loads; 50 A pulsed rating handles surge currents during actuator startup.

Use Scenario: Power path switch enabling bidirectional 20 V/5 A USB-C Power Delivery negotiation and delivery.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor in source-follower configuration for reverse conduction.

Use Value: 5.2 mΩ R_DS(on) limits voltage drop to <100 mV at 20 A, preserving PD voltage regulation margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 22 mΩ @ V_GS = 5 V; higher conduction loss; TO-220 package	Larger footprint; lower current density; less suitable for compact high-current designs	Prefer when through-hole mounting or legacy design reuse is required
STL110N3LLH6	R_DS(on) = 3.3 mΩ @ V_GS = 10 V; smaller die; different gate charge profile (Q_g = 27 nC)	Higher switching loss at same frequency; requires stronger gate driver	Prefer when lowest possible R_DS(on) dominates over switching speed

Compared with IRLZ44NPBF and STL110N3LLH6, IPD5N03LAG delivers superior thermal performance (1.8 K/W vs. ~3.0 K/W typical), tighter V_GS(th) distribution (1.2–2.0 V), and optimized FOM for high-frequency synchronous rectification - making it ideal for space-constrained, thermally demanding DC/DC stages.

Availability

IPD5N03LAG is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, industrial PLC outputs, and USB-C PD power path designs requiring stable component supply and long-term manufacturability.

Supply support for IPD5N03LAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IPD5N03LAG belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, automotive, and industrial power systems where logic-level drive and thermal resilience are essential.

FAQ

What is the maximum safe operating temperature for IPD5N03LAG?

The absolute maximum junction temperature is 175 °C, and the device is qualified for continuous operation at this rating. Thermal design must ensure junction temperature remains ≤175 °C under worst-case ambient, power dissipation, and PCB copper conditions - verified using R_thJC = 1.8 K/W and measured case temperature.

Can IPD5N03LAG be driven directly by a 3.3 V microcontroller?

Yes. With a gate threshold voltage of 1.2–2.0 V and guaranteed enhancement at V_GS = 4.5 V, IPD5N03LAG achieves full conduction using standard 3.3 V GPIOs. However, R_DS(on) increases to 6.8–8.5 mΩ at V_GS = 4.5 V, so thermal margin should be validated at full load.

Does IPD5N03LAG include integrated avalanche ruggedness?

Yes. It is characterized for single-pulse avalanche energy E_AS = 225 mJ at I_D = 45 A and R_GS = 25 Ω. This rating supports reliable operation in inductive switching applications like motor drives and flyback converters without external clamping components.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad on ≥6 cm² of 70 µm thick copper on FR4 (40 mm × 40 mm board, vertical orientation in still air). Use multiple thermal vias under the pad connected to inner or backside ground planes. Keep gate and source traces short and low-inductance to minimize ringing during switching.

IPD5N03LAG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD5N03LAG FAQ

1.How can I place an order for IPD5N03LAG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD5N03LAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD5N03LAG reliable?

The price and inventory of IPD5N03LAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD5N03LAG is usually 5 days.

3.What payment methods are accepted for IPD5N03LAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD5N03LAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD5N03LAG?

IPD5N03LAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD5N03LAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD5N03LAG?

For technical support, including IPD5N03LAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD5N03LAG requirements.

6.How does Aetrix verify that IPD5N03LAG is sourced from the original manufacturer or authorized distributors?

All IPD5N03LAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD5N03LAG meets industry standards.

7.What is the process for return or replacement of IPD5N03LAG?

All IPD5N03LAG units undergo pre-shipment inspection (PSI). If there is an issue with IPD5N03LAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD5N03LAG part is unused and in its original packaging.

Return procedure for IPD5N03LAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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