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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFI4905 MOSFET P-CH 55V 41A TO220AB FP Infineon Technologies	3,920	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	41A (Tc)	10V	20mOhm @ 22A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	3400 pF @ 25 V	-	63W (Tc)	-	-	-	Through Hole	TO-220AB Full-Pak
IRF3515L MOSFET N-CH 150V 41A TO262 Infineon Technologies	9,513	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	41A (Tc)	10V	45mOhm @ 25A, 10V	4.5V @ 250µA	107 nC @ 10 V	±30V	2260 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IPC302N10N3X1SA1 MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies	2,034	RFQ	Datasheet	OptiMOS™	Die	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1A (Tj)	10V	100mOhm @ 2A, 10V	3.5V @ 302µA	-	-	-	-	-	-	-	-	Surface Mount	Sawn on foil
IPD03N03LB G MOSFET N-CH 30V 90A TO252-3 Infineon Technologies	7,923	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Tc)	4.5V, 10V	3.3mOhm @ 60A, 10V	2V @ 70µA	40 nC @ 5 V	±20V	5200 pF @ 15 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-11
IPB60R280C6ATMA1 MOSFET N-CH 600V 13.8A D2PAK Infineon Technologies	2,143	RFQ	Datasheet	CoolMOS™ C6	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	3.5V @ 430µA	43 nC @ 10 V	±20V	950 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3
IPC302N08N3X1SA1 MOSFET N-CH 80V 1A SAWN ON FOIL Infineon Technologies	5,918	RFQ	Datasheet	OptiMOS™	Die	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	1A (Tj)	10V	100mOhm @ 2A, 10V	3.5V @ 270µA	-	-	-	-	-	-	-	-	Surface Mount	Sawn on foil
IRFP150MPBF MOSFET N-CH 100V 42A TO247AC Infineon Technologies	3	RFQ	Datasheet	HEXFET®	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
IRL2505STRLPBF MOSFET N-CH 55V 104A D2PAK Infineon Technologies	7,962	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	104A (Tc)	4V, 10V	8mOhm @ 54A, 10V	2V @ 250µA	130 nC @ 5 V	±16V	5000 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
AUIRF3805STRL MOSFET N-CH 55V 160A D2PAK Infineon Technologies	8,802	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	160A (Tc)	-	3.3mOhm @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	-	7960 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF6717MTR1PBF MOSFET N-CH 25V 38A DIRECTFET Infineon Technologies	3,937	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	38A (Ta), 200A (Tc)	4.5V, 10V	1.25mOhm @ 38A, 10V	2.35V @ 150µA	69 nC @ 4.5 V	±20V	6750 pF @ 13 V	-	2.8W (Ta), 96W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX

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