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Infineon Technologies IPC302N10N3X1SA1
- Part No.:
- IPC302N10N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N10N3X1SA1.pdf
- Description:
- MOSFET N-CH 100V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:2,034
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Product details
Overview
IPC302N10N3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-current switching in industrial power stages. It features 100 V V(BR)DSS, 1.7 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 6.7 × 4.5 mm² die size, and NiV backside metallization. It is used in DC-DC converters and motor drive half-bridges requiring low conduction loss on wafer-level die integration.
For engineers reviewing the IPC302N10N3X1SA1 datasheet, IPC302N10N3X1SA1 pinout, IPC302N10N3X1SA1 application, or IPC302N10N3X1SA1 equivalent, key selection criteria include wafer-level RDS(on) tolerance (1.7–100 mΩ), avalanche energy rating (45 mJ), gate threshold voltage range (2.0–3.5 V), and compatibility with solder or epoxy die attach processes.
Technical Context
This bare-die MOSFET operates in enhancement mode with zero-gate-voltage drain current limited to 1 µA max at 100 V. Its gate threshold voltage (2.0–3.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers in discrete power modules.
The device is wafer-tested for electrical parameters including RDS(on), V(BR)DSS, and EAS (45 mJ single-pulse avalanche energy at ID = 30 A, RGS = 25 Ω). Frontside AlCu metallization and nitride edge passivation support robust wire-bonding and long-term reliability in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - maximum blocking voltage before avalanche onset; defines safe operating voltage ceiling in 48 V bus systems |
| RDS(on) typ. | 1.7 mΩ at VGS = 10 V, ID = 2.0 A - enables <1 W conduction loss at 20 A in optimized thermal packages |
| VGS(th) | 2.0–3.5 V - ensures full enhancement with 3.3 V microcontroller GPIO or level-shifted gate drivers |
| EAS | 45 mJ - quantifies single-pulse avalanche ruggedness during inductive turn-off transients |
| Die size | 6.7 × 4.5 mm² - standard footprint for automated die placement in hybrid power modules and custom substrates |
| Thickness | 220 µm - compatible with standard die attach and wire bonding tooling for high-volume assembly |
Pinout & Package
IPC302N10N3X1SA1 is supplied as a bare die without leadframe or molded package. Die terminals are exposed metal pads: Drain (entire backside), Gate (frontside pad), Source (frontside pad). Bonding configuration follows standard three-terminal power MOSFET topology.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-side power node | Backside NiV metallization - requires solder or conductive epoxy attachment to heatsink or DBC substrate |
| Gate | Control input | Frontside AlCu pad - bonded via gold or aluminum wire; sensitive to ESD (MIL-STD-883C compliant) |
| Source | Reference return path | Frontside AlCu pad - provides low-inductance return for gate drive loop and power current path |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off operation without external bias; supports synchronous rectification and half-bridge topologies |
| Wafer-level RDS(on) test | Guarantees 1.7 mΩ typical on-resistance prior to packaging - reduces post-assembly binning variance |
| NiV backside metallization | Provides high thermal conductivity and solder-wettability for direct die-to-heatsink mounting |
| Nitride edge passivation | Prevents moisture ingress and field concentration at die periphery - improves long-term HV reliability |
| AQL 0.65 visual inspection | Ensures defect-free surface topology for wire bond integrity and die attach uniformity |
Applications
| Motor Drive Half-Bridge | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-efficiency 24–48 V BLDC motor control in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge power stage; handles continuous 30 A peak current with minimal conduction loss. Use Value: 1.7 mΩ RDS(on) reduces I²R losses by >35% vs. legacy 3.5 mΩ dies, enabling smaller heatsinks and higher power density. | Use Scenario: Isolated 48 V to 12 V step-down converter in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET; commutated at 200–500 kHz with gate driver IC. Use Value: 100 V breakdown rating accommodates reflected voltage spikes up to 85 V, eliminating need for snubbers. |
| Custom Hybrid Power Module | High-Current Battery Protection |
Use Scenario: Multi-die power module integrating gate drivers, current sensing, and thermal monitoring on ceramic substrate. IC Role / Device Role / Timing Role: Bare-die power switch mounted directly on DBC; enables ultra-low parasitic inductance layout. Use Value: 6.7 × 4.5 mm² footprint aligns with standard pick-and-place nozzles; 220 µm thickness supports vacuum chuck handling. | Use Scenario: Solid-state main contactor replacement in 48 V battery energy storage systems (BESS). IC Role / Device Role / Timing Role: High-side isolation switch with integrated overcurrent protection and thermal shutdown coordination. Use Value: 45 mJ avalanche energy rating allows safe clamping of inductive kickback during rapid disconnection events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB027N10N3 G | Same OptiMOS™3 process, but packaged in P-TO263-3; RDS(on) = 2.7 mΩ (typ.) at 10 V | Requires PCB footprint and thermal vias; not suitable for direct die attach or hybrid modules | Select when board-level assembly and standard reflow are preferred over custom die integration |
| IPP023N10N5 | OptiMOS™5 generation; 2.3 mΩ RDS(on), 100 V, but larger 7.2 × 4.8 mm² die size and different metallization stack | Higher gate charge (Qg = 59 nC vs. ~42 nC estimated); may require stronger gate driver | Select when lower RDS(on) justifies revised layout and driver redesign; not drop-in compatible |
Compared with IPB027N10N3 G and IPP023N10N5, IPC302N10N3X1SA1 offers the lowest RDS(on) among wafer-tested bare dies in its voltage class and enables highest thermal performance in custom power modules, but requires specialized die-attach and wire-bonding infrastructure.
Availability
IPC302N10N3X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, PLC power supplies, and custom hybrid power modules requiring stable component supply and wafer-level traceability.
Supply support for IPC302N10N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™3 Power MOS Transistor Chip product line, engineered for high-efficiency, high-current switching in space-constrained industrial power conversion and motor control applications.
FAQ
Is IPC302N10N3X1SA1 a packaged device or bare die?
IPC302N10N3X1SA1 is a bare die - no leadframe, molding compound, or terminal leads. It is delivered as a singulated silicon chip with frontside AlCu metallization and NiV backside metallization, intended for direct die attach in custom modules or hybrid substrates.
What is the maximum rated drain current for IPC302N10N3X1SA1?
The datasheet does not specify a maximum continuous drain current rating for the bare die, as thermal performance depends entirely on the host substrate and cooling solution. However, wafer-level testing confirms safe single-pulse avalanche operation up to 30 A with 45 mJ energy absorption.
Does IPC302N10N3X1SA1 support logic-level gate drive?
Yes - its gate threshold voltage range (2.0–3.5 V) and low gate charge enable reliable turn-on with 3.3 V or 5 V logic-level drivers. Full enhancement occurs well within standard microcontroller GPIO voltage ranges, though gate drive strength must be sized for ~42 nC total gate charge.
Can IPC302N10N3X1SA1 be used in automotive applications?
No - this bare die is qualified for industrial and multimarket use only. Infineon explicitly states that use in automotive, aviation, aerospace, or life-support systems requires express written approval, which is not granted for this part number per its datasheet disclaimer.
IPC302N10N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 302µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N10N3X1SA1 FAQ
1.How can I place an order for IPC302N10N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N10N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N10N3X1SA1 reliable?
The price and inventory of IPC302N10N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N10N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N10N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N10N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N10N3X1SA1?
IPC302N10N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N10N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N10N3X1SA1?
For technical support, including IPC302N10N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N10N3X1SA1 requirements.
6.How does Aetrix verify that IPC302N10N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N10N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N10N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N10N3X1SA1?
All IPC302N10N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N10N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N10N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302N10N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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