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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD03N03LB G

Name: IPD03N03LB G
Brand: Infineon Technologies
SKU: IPD03N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD03N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD03N03LB G.pdf

Description:: MOSFET N-CH 30V 90A TO252-3

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Product details

Overview

IPD03N03LB G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 3.3 mΩ R_DS(on) (max at V_GS = 10 V, I_D = 60 A), and 90 A continuous drain current at T_C = 25 °C. It features 175 °C maximum junction temperature, low gate charge (Q_g = 30–40 nC), and integrated body diode with 90 A forward current capability - used in high-efficiency DC-DC synchronous rectification and motor drive half-bridges.

For engineers reviewing the IPD03N03LB G datasheet, IPD03N03LB G pinout, IPD03N03LB G application, or IPD03N03LB G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 1.3 K/W), avalanche energy rating (E_AS = 240 mJ), and reverse diode dv/dt robustness (6 kV/µs) in high-speed switching environments.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in 12 V and 24 V systems. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting, while its 3.3 mΩ R_DS(on) supports high-current synchronous FET operation in buck converters and H-bridge motor drivers.

The integrated Schottky-like body diode exhibits low V_SD (0.92–1.2 V at I_F = 90 A, T_j = 25 °C) and fast reverse recovery (Q_rr = 10 nC), minimizing shoot-through risk and commutation loss. Dynamic parameters - including C_iss = 3900–5200 pF and Q_gd/Q_gs ratio ~0.65 - support stable hard-switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V/24 V automotive and industrial bus systems.
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 90 A in PCB-mounted thermal configuration.
I_D cont.	90 A at T_C = 25 °C - Supported by TO252's low R_thJC (1.3 K/W) and copper-clad PCB layout.
E_AS	240 mJ (I_D = 90 A, R_GS = 25 Ω) - Withstands single-pulse inductive energy in motor control fault conditions.
Q_g	30–40 nC - Determines gate driver power requirement and switching speed in 100–500 kHz applications.
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without external gate boosting.
dv/dt immunity	6 kV/µs - Prevents spurious turn-on during high dV/dt transients in bridge configurations.

Pinout & Package

IPD03N03LB G uses the PG-TO252-3-11 surface-mount package (DPAK), with exposed drain pad for thermal conduction to PCB copper. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max; low input capacitance (C_iss ≈ 4.5 nF) eases driver design.
Pin 2 (Drain)	High-side or low-side power path	Exposed metal tab - must be soldered to ≥6 cm² copper pour for thermal performance; electrically connected to drain.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current; used as ground reference for gate driver ICs in low-side configurations.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 3.3 V MCU designs.
Low R_DS(on) × Q_g figure of merit	~100 mΩ·nC - balances conduction and switching loss for high-frequency synchronous rectification.
175 °C maximum junction temperature	Enables operation in sealed enclosures or high ambient environments without derating below 90 A.
Robust body diode	Q_rr = 10 nC, V_SD = 0.92 V - reduces reverse recovery loss and EMI in freewheeling paths.
Pb-free, RoHS-compliant plating	Meets IPC-J-STD-020 moisture sensitivity level 1 - suitable for standard reflow profiles without baking.

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Driver

Use Scenario: High-side load switch for headlight, fan, or solenoid control in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump or bootstrap gate drive; handles 90 A inrush and steady-state loads.

Use Value: Low R_DS(on) minimizes voltage drop and heat generation; 175 °C rating ensures reliability under hood temperatures.

Use Scenario: Low-side FET in H-bridge for brushed DC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path; switched at 20–100 kHz with microcontroller GPIO.

Use Value: Logic-level gate enables direct MCU drive; low Q_g supports fast switching with minimal driver overhead.

Server VRM Synchronous Rectifier

Telecom 48 V Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectifier in multiphase buck converters delivering >100 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating with gate voltage referenced to source; driven by dedicated gate controller.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss below 0.3 W at full load; low Q_gd improves cross-conduction margin.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V DC-DC modules for base station power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in active clamp forward or LLC resonant topologies.

Use Value: 240 mJ E_AS withstands leakage inductance spikes; 6 kV/µs dv/dt immunity prevents false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.0 mΩ @ 10 V, but higher Q_g (52 nC); TO-220 package, not SMD.	Lacks PG-TO252 thermal interface; unsuitable for high-density PCB layouts requiring DPAK footprint.	Prefer IPD03N03LB G when board space and thermal performance are constrained.
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V, but V_GS(th) = 1.0–2.5 V; same PG-TO252-3 package.	Lower R_DS(on) improves conduction loss, but wider V_GS(th) tolerance increases risk of partial turn-on at 3.3 V.	Prefer IPD03N03LB G for deterministic 3.3 V logic compatibility and tighter threshold control.

Compared with IRL3803PBF and STL220N3LLH6, IPD03N03LB G delivers optimal balance of low R_DS(on), tight V_GS(th) distribution, SMD thermal performance, and avalanche ruggedness - making it preferred for space-constrained, high-reliability 12–24 V power stages.

Availability

IPD03N03LB G is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server VRMs, and telecom power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD03N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-efficiency, high-current switching applications in 12 V and 24 V systems - emphasizing low R_DS(on), logic-level drive, and ruggedness in automotive and industrial environments.

FAQ

What is the maximum safe gate-source voltage for IPD03N03LB G?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above +20 V risks permanent gate oxide damage, while negative V_GS beyond –20 V may cause gate punch-through. Recommended gate drive range is 0 V to 15 V for reliable long-term operation with margin.

Can IPD03N03LB G be used in high-side switching configurations without a charge pump?

No - as an N-channel MOSFET, it requires gate voltage elevated above the drain rail to turn on. In high-side applications, a bootstrap circuit or dedicated high-side gate driver (e.g., IRS2007) is mandatory to achieve V_GS ≥ 10 V when drain is at bus voltage.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = 0.92–1.2 V at 90 A and Q_rr = 10 nC - lower forward drop than most 30 V Schottkys but higher than ultra-low-V_F SiC Schottkys. It eliminates discrete part count and layout area, though discrete Schottkys may be preferred for >300 kHz operation where Q_rr dominates loss.

Is IPD03N03LB G suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables natural current sharing. Layout symmetry, matched gate drive impedance, and shared thermal mass are required. Derating to 80% of total rated current per device is recommended for reliability.

IPD03N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD03N03LB G FAQ

1.How can I place an order for IPD03N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD03N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD03N03LB G reliable?

The price and inventory of IPD03N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD03N03LB G is usually 5 days.

3.What payment methods are accepted for IPD03N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD03N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD03N03LB G?

IPD03N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD03N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD03N03LB G?

For technical support, including IPD03N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD03N03LB G requirements.

6.How does Aetrix verify that IPD03N03LB G is sourced from the original manufacturer or authorized distributors?

All IPD03N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD03N03LB G meets industry standards.

7.What is the process for return or replacement of IPD03N03LB G?

All IPD03N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPD03N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD03N03LB G part is unused and in its original packaging.

Return procedure for IPD03N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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