Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3805STRL

Name: AUIRF3805STRL
Brand: Infineon Technologies
SKU: AUIRF3805STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AUIRF3805STRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF3805STRL.pdf

Description:: MOSFET N-CH 55V 160A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,802

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AUIRF3805STRL from Infineon is an automotive-grade N-channel D2PAK (TO-263) Power MOSFET with 55 V V_DS, 2.6 mΩ typ. R_DS(on) at V_GS = 10 V, 160 A package-limited continuous drain current, and 175 °C maximum junction temperature-designed for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRF3805STRL datasheet, AUIRF3805STRL pinout, AUIRF3805STRL application, or AUIRF3805STRL equivalent, key selection criteria include its ultra-low on-resistance, repetitive avalanche capability up to T_jmax, fast switching (t_r = 20 ns, t_f = 87 ns), and automotive qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs Infineon's HEXFET® process to achieve silicon-limited current handling (210 A) while maintaining package-limited operation at 160 A under thermal constraints. Its gate charge profile (Q_g = 190–290 nC) and low C_iss (7960 pF) support high-frequency synchronous rectification in 48 V automotive power architectures.

The device integrates a robust body diode with 75 A rated reverse recovery (t_rr = 36–54 ns, Q_rr = 47–71 nC) and supports unclamped inductive switching with E_AS = 940 mJ (tested) and repetitive avalanche energy up to 650 mJ-enabling reliable operation in load dump and solenoid drive circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Withstands automotive battery transients up to ISO 7637-2 Pulse 5a (±100 V clamped).
R_DS(on) typ.	2.6 mΩ @ V_GS = 10 V, I_D = 75 A - Enables <1.5 W conduction loss at 75 A, critical for thermal management in compact ECUs.
I_D (Package)	160 A @ T_C = 25 °C - Defines practical current limit under PCB-mount thermal conditions (R_θJA = 40 °C/W).
E_AS (tested)	940 mJ - Validated single-pulse avalanche energy ensures robustness against inductive kickback in fuel injector drivers.
t_r/t_f	20 ns / 87 ns @ I_D = 75 A - Supports >200 kHz switching in high-side buck regulators without excessive switching loss.
T_J max	+175 °C - Enables operation in under-hood environments (e.g., transmission control modules) without derating.
Q_g	190–290 nC - Determines gate driver strength requirement; compatible with standard 2 A peak drivers (e.g., Infineon 1EDN7512B).

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal enhancement and mechanical mounting via screw or solder. Standard 3-pin configuration: Gate (G), Drain (D), Source (S), with Drain connected to the metal tab for low-inductance heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Control input	Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V enables compatibility with 3.3 V/5 V microcontrollers via level-shifting.
D	High-current output node	Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground (common-source topology).
S	Power return path	Source terminal ties directly to low-side shunt resistor or controller ground; internal source inductance LS = 7.5 nH impacts high-di/dt stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.6 mΩ typ. reduces conduction losses by >35% vs. legacy 55 V MOSFETs in 12 V starter-generator inverters.
175 °C operating temperature	Enables full-rated performance in ambient temperatures up to 125 °C (e.g., near turbochargers or exhaust manifolds).
Repetitive avalanche rating	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in valve actuation.
AEC-Q101 qualified	Passed stress tests including HTOL, TC, UHAST, and ESD (HBM 2 kV, CDM 1 kV) for automotive safety-critical functions.
Low Q_gd/Q_gs ratio	72 nC / 52 nC = 1.38 - Minimizes Miller effect, improving noise immunity during high dv/dt commutation in 48 V mild-hybrid systems.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter (12 V → 5 V)

Use Scenario: High-speed switching of solenoid-based fuel injectors in gasoline direct injection (GDI) systems requiring precise pulse-width modulation at 10–20 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; body diode provides freewheeling path during turn-off.

Use Value: 36 ns reverse recovery time and 71 nC Q_rr minimize switching loss and electromagnetic interference during rapid current decay.

Use Scenario: Synchronous rectifier in secondary side of isolated flyback or forward converter powering infotainment head units.

IC Role / Device Role / Timing Role: Power MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 3 A load.

Use Value: 2.6 mΩ R_DS(on) cuts rectifier loss by 60% vs. 40 V Schottky, enabling >92% efficiency at 5 A output.

Electric Power Steering (EPS) Motor Phase Leg

12 V Automotive Starter Relay Replacement

Use Scenario: Half-bridge high-side/low-side switching in 3-phase inverter driving brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: N-channel MOSFET used in low-side position with bootstrap gate drive; handles 150 A peak phase current.

Use Value: 160 A package-limited current and 0.50 °C/W R_θJC allow direct heatsink mounting to meet ASIL-B thermal safety requirements.

Use Scenario: Solid-state replacement for electromechanical starter relays in start-stop systems, switching battery current to starter motor solenoid.

IC Role / Device Role / Timing Role: Single-pole high-current switch activated by BCM command; operates in on/off mode with <10 ms response.

Use Value: 890 A pulsed drain current (I_DM) and 940 mJ E_AS withstand cranking surge without failure during cold-start conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	60 V V_DS, 2.0 mΩ R_DS(on), DFN8 5×6 mm package, no exposed drain tab	Lacks mechanical mounting option; limited to surface-mount thermal interface with thermal vias	Preferred for space-constrained ADAS camera modules where board area is critical and peak current ≤120 A.
IRF3207PbF	75 V V_DS, 4.0 mΩ R_DS(on), TO-220AB package, non-automotive grade	No AEC-Q101 qualification; lower temperature rating (150 °C)	Acceptable only for non-safety-critical aftermarket accessories with ambient <85 °C and no vibration/corrosion exposure.

Compared with STL220N5LF8AG and IRF3207PbF, AUIRF3805STRL uniquely balances ultra-low on-resistance, automotive qualification, and through-hole-compatible D2PAK thermal robustness-making it optimal for high-reliability under-hood power switching where mechanical stability and transient resilience are mandatory.

Availability

AUIRF3805STRL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild-hybrid DC-DC converters requiring stable component supply across extended automotive product lifecycles.

Supply support for AUIRF3805STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

AUIRF3805STRL belongs to the HEXFET® automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum gate-to-source voltage rating for AUIRF3805STRL?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable 12 V automotive systems, a 12 V gate drive with 10 V nominal level is recommended; external Zener clamping at 15 V is advised when using higher-voltage drivers or in noisy environments.

Does AUIRF3805STRL require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. For 75 A switching at 100 kHz, a 2.6 Ω resistor is validated in Infineon's application note AN-1005. Lower values (1–2 Ω) improve switching speed but increase EMI; higher values (5–10 Ω) reduce ringing at the cost of increased t_on/t_off.

Can AUIRF3805STRL be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate trace lengths, Kelvin source connections, and individual gate resistors. Thermal coupling must be uniform-mounting on a common heatsink with identical thermal interface material thickness is mandatory. Derate total current by 15% to account for parameter spread (R_DS(on) tolerance ±20%).

Is the body diode suitable for continuous freewheeling in synchronous rectification?

No-the body diode is optimized for unclamped inductive turn-off recovery, not continuous conduction. Its V_SD = 1.3 V at 75 A results in excessive power loss. For synchronous rectification, use complementary low-side FETs with active gate control to minimize conduction time in diode mode.

AUIRF3805STRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 290 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 7960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF3805STRL FAQ

1.How can I place an order for AUIRF3805STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3805STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3805STRL reliable?

The price and inventory of AUIRF3805STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3805STRL is usually 5 days.

3.What payment methods are accepted for AUIRF3805STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3805STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3805STRL?

AUIRF3805STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3805STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3805STRL?

For technical support, including AUIRF3805STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3805STRL requirements.

6.How does Aetrix verify that AUIRF3805STRL is sourced from the original manufacturer or authorized distributors?

All AUIRF3805STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3805STRL meets industry standards.

7.What is the process for return or replacement of AUIRF3805STRL?

All AUIRF3805STRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3805STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3805STRL part is unused and in its original packaging.

Return procedure for AUIRF3805STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…