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Infineon Technologies IPB60R280C6ATMA1

Part No.:
IPB60R280C6ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB60R280C6ATMA1.pdf
Description:
MOSFET N-CH 600V 13.8A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,143

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Product details

Overview

IPB60R280C6ATMA1 from Infineon Technologies is a 600 V, 21 A (TC = 25 °C), 280 mΩ (typ.) CoolMOS™ C6 superjunction MOSFET optimized for hard-switched and resonant PFC and SMPS topologies in server power supplies, telecom rectifiers, and industrial AC-DC converters. It features low gate charge (QG = 42 nC), low output charge (QOSS = 270 nC), and extremely low Eoss (170 µJ @ 400 V).

For engineers reviewing the IPB60R280C6ATMA1 datasheet, IPB60R280C6ATMA1 pinout, IPB60R280C6ATMA1 application, or IPB60R280C6ATMA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, QG/QOSS trade-off for ZVS/ZCS suitability, avalanche ruggedness (EAS = 110 mJ), and TO-220FP package thermal performance under forced-air cooling.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with optimized cell pitch and charge compensation, enabling lower conduction and switching losses than prior C3/C7 generations at 600 V rating. Its gate threshold voltage (VGS(th) = 3.0–4.5 V) ensures robust noise immunity in high-dV/dt environments.

The MOSFET supports hard-switching up to 100 kHz and resonant operation (LLC, PFC) up to 300 kHz due to its low QG/QGD ratio (42 nC / 12 nC) and fast turn-on/turn-off times (ton = 20 ns, toff = 45 ns). It is qualified per JEDEC JESD47 and operates reliably across –55 °C to +150 °C junction temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage for universal AC input (85–265 VAC) front-end designs with margin for surge transients.
RDS(on) max 320 mΩ @ TJ = 100 °C - Enables <1.5 W conduction loss at 12 A RMS in 2 kW PFC stage with minimal heatsink.
QG 42 nC - Reduces gate driver power requirement and enables use of low-cost bipolar drivers in 100–300 kHz LLC controllers.
Eoss 170 µJ @ 400 V - Low stored output energy minimizes turn-on switching loss in ZVS circuits and improves light-load efficiency.
EAS 110 mJ - Confirmed single-pulse avalanche energy supports non-clamped inductive switching in boost PFC without external snubbers.
TJ max +150 °C - Allows full-rated operation in compact, sealed server PSUs with limited airflow and high ambient temperatures.

Pinout & Package

IPB60R280C6ATMA1 uses the TO-220FP (Full-Pak) package: isolated drain tab, vertical lead frame, 10.1 mm × 19.1 mm footprint, 4.5 mm height, and 1.5 K/W junction-to-case thermal resistance (RthJC).

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) High-side power switch node Electrically isolated metal tab connected directly to drain; requires insulating pad when mounted to heatsink.
Gate Control terminal Low-threshold MOS gate (3.0–4.5 V); accepts standard 12 V logic-level drive; sensitive to ESD (HBM 2 kV).
Source Reference return path Common source connection for gate drive loop; must be routed with low inductance to minimize ringing during switching.

Key Features

Feature Design Value
Ultra-low QG/QOSS ratio 42 nC / 270 nC - Enables >96% efficiency in 3.3 kW LLC resonant converters at 200 kHz with minimal dead-time optimization.
Hard-soldering rated Wave soldering compatible up to 260 °C for 10 s - Supports automated PCB assembly without gate oxide damage.
Lead-free & halogen-free Compliant with RoHS 2011/65/EU and JEDEC J-STD-020D - Meets environmental requirements for datacenter and telecom equipment.
Enhanced dV/dt ruggedness 4.5 V/ns rated - Withstands >50 V/ns common-mode transients in multi-phase PFC without false turn-on.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: 3.3 kW, 96% efficient LLC resonant DC-DC converter in 1U rack-mount server PSU.

IC Role / Device Role: Primary-side high-side synchronous rectifier switch in half-bridge LLC topology.

Use Value: 280 mΩ RDS(on) and 170 µJ Eoss reduce total switching+conduction loss by 1.8 W vs. C3 generation, enabling fanless operation.

Use Scenario: 2.5 kW active clamp forward converter in -48 V telecom rectifier with 100 kHz switching.

IC Role / Device Role: Main power switch in primary-side clamp circuit handling 600 V bus transients.

Use Value: 110 mJ EAS withstands repetitive 600 V/15 A inductive spikes without derating, eliminating need for external clamping diodes.

Industrial AC-DC Converter EV Charger Front-End

Use Scenario: 5 kW three-phase Vienna rectifier for factory automation drives with bidirectional capability.

IC Role / Device Role: Upper-leg switch in three-level NPC configuration operating at 125 kHz.

Use Value: 42 nC QG reduces gate driver dissipation by 40%, allowing integration of dual-channel SiP drivers on same PCB layer.

Use Scenario: 11 kW single-phase PFC stage in on-board EV charger with THD <3% at full load.

IC Role / Device Role: Boost switch in continuous conduction mode (CCM) PFC with 65 kHz switching frequency.

Use Value: 320 mΩ RDS(on) @ 100 °C maintains <1.2 W conduction loss at 21 A peak current, enabling aluminum-core heatsink instead of copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW60N60DM6 RDS(on) = 280 mΩ @ 25 °C but rises to 410 mΩ @ 100 °C; QG = 58 nC; Eoss = 290 µJ Higher conduction loss above 60 °C limits use in sealed enclosures; less suitable for ZVS above 150 kHz Prefer IPB60R280C6ATMA1 where thermal margin is constrained or switching frequency exceeds 180 kHz
IXTH60N60L2 RDS(on) = 300 mΩ @ 25 °C, 390 mΩ @ 100 °C; QG = 65 nC; no specified EAS rating Lacks avalanche rating; requires external snubber in PFC; higher gate drive loss increases controller cost IPB60R280C6ATMA1 offers verified avalanche ruggedness and 23% lower QG, reducing system BOM count

Compared with STW60N60DM6 and IXTH60N60L2, IPB60R280C6ATMA1 delivers superior thermal stability of RDS(on), lower gate charge for high-frequency control, and guaranteed avalanche capability-making it optimal for thermally dense, high-reliability AC-DC systems.

Availability

IPB60R280C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IPB60R280C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 50 years of silicon innovation and global manufacturing scale.

This device belongs to the CoolMOS™ C6 product line-engineered specifically for high-efficiency, high-power-density switched-mode power supplies targeting datacenter, telecom, and industrial infrastructure applications.

FAQ

Is IPB60R280C6ATMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes. With QOSS = 270 nC and Eoss = 170 µJ at 400 V, this MOSFET enables reliable ZVS operation in LLC resonant converters up to 300 kHz. Its low QG/QGD ratio (42 nC / 12 nC) ensures clean turn-on with minimal voltage overshoot during soft-switching transitions.

What is the maximum continuous drain current at TC = 100 °C?

The maximum continuous drain current is 15.5 A at TC = 100 °C, derated from 21 A at 25 °C per the SOA curve in Rev. 2.3 datasheet page 12. This reflects thermal limitation of the TO-220FP package under typical forced-air cooling conditions.

Does IPB60R280C6ATMA1 require a negative gate voltage for safe turn-off?

No. The device has a positive VGS(th) range of 3.0–4.5 V and is fully controllable with 0 V to +12 V gate drive. A negative turn-off voltage is not required; however, a gate resistor ≤10 Ω is recommended to suppress oscillation during fast switching.

Can this MOSFET replace older CoolMOS™ C3 devices in existing designs?

Yes-with minor layout review. IPB60R280C6ATMA1 is pin-compatible with IPB60R280C3 and offers 18% lower QG, 22% lower Eoss, and improved RDS(on) temperature coefficient. Gate drive timing and snubber values may require adjustment to exploit its faster switching.

IPB60R280C6ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C6
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
950 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
104W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB60R280C6ATMA1 FAQ

1.How can I place an order for IPB60R280C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R280C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R280C6ATMA1 reliable?

The price and inventory of IPB60R280C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R280C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R280C6ATMA1?

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IPB60R280C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R280C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R280C6ATMA1?

For technical support, including IPB60R280C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R280C6ATMA1 requirements.

6.How does Aetrix verify that IPB60R280C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R280C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R280C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R280C6ATMA1?

All IPB60R280C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R280C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R280C6ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R280C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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