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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6717MTR1PBF

Name: IRF6717MTR1PBF
Brand: Infineon Technologies
SKU: IRF6717MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6717MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6717MTR1PBF.pdf

Description:: MOSFET N-CH 25V 38A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6717MTR1PBF from Infineon Technologies (formerly International Rectifier) is a 25 V, N-channel DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side FET roles in CPU core DC-DC applications. It delivers 0.95 mΩ R_DS(on) @ 10 V, 46 nC total gate charge, and ultra-low package inductance in a 0.7 mm profile surface-mount package. Its high C_dv/dt immunity and low conduction/switching losses support >1 MHz switching in high-efficiency point-of-load converters.

For engineers reviewing the IRF6717MTR1PBF datasheet, IRF6717MTR1PBF pinout, IRF6717MTR1PBF application, or IRF6717MTR1PBF equivalent, key selection criteria include R_DS(on) at 4.5 V (1.6 mΩ), Q_gd/Q_gs2 ratio for hard-switching robustness, thermal resistance R_θJC = 1.3 °C/W, and body diode reverse recovery charge Q_rr = 31 nC under 175 A/μs di/dt.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ packaging-eliminating bond wires and enabling dual-sided cooling. Its gate threshold voltage (V_GS(th) = 1.8 V typ.) and negative temperature coefficient of R_DS(on) support stable parallel operation. The low Q_gd (14 nC) and high Q_gd/Q_gs2 ratio improve immunity to spurious turn-on during high dv/dt transitions in synchronous rectification.

The device is characterized for repetitive unclamped inductive switching (UIS) up to 290 mJ and avalanche-rated for I_AS = 30 A. Its C_iss = 6750 pF, C_oss = 1700 pF, and C_rss = 730 pF enable precise modeling of switching behavior in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus and 3.3 V/1.8 V/1.0 V CPU core rails.
R_DS(on) @ 10 V	0.95 mΩ - Enables <1 W conduction loss at 38 A continuous drain current (T_C = 25°C).
R_DS(on) @ 4.5 V	1.6 mΩ - Supports efficient operation with 5 V or 4.5 V gate drive in low-voltage synchronous FET configurations.
Q_g total	46 nC - Low gate charge reduces driver power loss and enables fast turn-on with minimal overshoot.
Q_gd	14 nC - Critical for Miller immunity; low Q_gd/Q_g ratio (30%) suppresses false triggering in high dv/dt environments.
R_θJC	1.3 °C/W - Enables direct heatsink attachment to drain (top side) and PCB copper (bottom side) for dual-sided thermal extraction.
Q_rr	31 nC - Low reverse recovery charge minimizes switching loss and EMI in hard-commutated synchronous rectifiers.

Pinout & Package

The IRF6717MTR1PBF uses the DirectFET™ M package-a leadless, double-sided cooling, ultra-low-inductance surface-mount package with footprint compatibility to SO-8 layouts. Dimensions: 6.35 × 5.05 × 0.7 mm (L × W × H). Drain is electrically connected to both top metal pad and bottom copper land; source and gate terminals are on the periphery.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad (Drain)	High-current drain connection and primary thermal path	Enables direct heatsink mounting; carries full load current and dissipates >90% of heat via top-side conduction.
Bottom Copper Land (Drain)	Secondary drain connection and PCB thermal interface	Provides low-impedance thermal path to internal PCB copper planes; supports dual-sided cooling architecture.
Source Terminal (S)	Source node for gate drive reference and current return	Low-inductance source loop critical for minimizing switching ringing and improving EMI performance.
Gate Terminal (G)	Control electrode for channel modulation	Optimized for low-Q_gd layout; requires Kelvin-source gate drive routing to avoid common-source inductance effects.

Key Features

Feature	Design Value
DirectFET™ packaging	Eliminates bond wires and reduces package inductance by >50% vs. SO-8, enabling cleaner switching waveforms above 1 MHz.
Dual-sided cooling capability	Reduces effective thermal resistance by 80% vs. conventional packages, allowing >2× power density in space-constrained CPU VRMs.
Optimized for synchronous FET role	Combines low R_DS(on) at 4.5 V (1.6 mΩ) and high C_dv/dt immunity to prevent shoot-through in buck converter low-side switching.
100% R_G tested	Ensures consistent gate resistance (1.3–2.2 Ω) across production lots, critical for predictable switching timing and driver design.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 requirements for bromine/chlorine content, supporting green manufacturing compliance.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 and ARM processors at up to 400 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous FET handling continuous 30–50 A per phase with <100 ns switching transitions.

Use Value: 0.95 mΩ R_DS(on) and 46 nC Q_g reduce conduction + switching losses by ~22% vs. prior-gen 30 V MOSFETs, enabling >92% efficiency at 200 A.

Use Scenario: Compact, high-density VRM for discrete and integrated GPUs requiring rapid transient response and low output ripple.

IC Role / Device Role / Timing Role: High-side FET in 300 kHz–1.5 MHz buck stage, operating with 4.5 V gate drive from integrated controller.

Use Value: 1.6 mΩ R_DS(on) @ 4.5 V ensures minimal voltage drop during heavy load transients, maintaining tight output regulation under 50 A/μs slew rates.

AI Accelerator Board Power

Server Memory Regulator

Use Scenario: Point-of-load converter on PCIe-based AI inference cards delivering 0.75–0.9 V to ASICs with dynamic current ranging 100–600 A.

IC Role / Device Role / Timing Role: Parallel-configured low-side FET with Kelvin-source layout to manage 150 A per phase while suppressing thermal runaway.

Use Value: Negative R_DS(on) tempco and 1.3 °C/W R_θJC enable stable current sharing across 4+ paralleled devices without external current-sense feedback.

Use Scenario: DDR5 memory subsystem regulator supplying 1.1 V to 16 GB modules with strict ±15 mV tolerance and fast load-step response.

IC Role / Device Role / Timing Role: Synchronous rectifier in 600 kHz buck converter with integrated controller driving gate at 5 V logic level.

Use Value: 31 nC Q_rr and 27 ns t_rr minimize dead-time loss and output voltage droop during 10 A/μs load steps, preserving signal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPBF	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 32 nC; uses standard SO-8 package with higher R_θJA (45 °C/W)	Lacks dual-sided cooling; unsuitable for >200 A multi-phase designs where thermal density is limiting	Prefer when board-level thermal management is sufficient and cost sensitivity outweighs efficiency gains.
SiR626DP-T1-GE3	R_DS(on) = 0.95 mΩ @ 10 V; Q_g = 42 nC; TrenchFET® Gen IV in PowerPAK® SO-8; R_θJC = 1.5 °C/W	Single-sided cooling only; slightly higher Q_gd (16 nC) reduces dv/dt noise margin in high-speed sync-FET use	Select when existing SO-8 layout reuse is mandatory and peak efficiency is secondary to design cycle time.

Compared with IRF6717MTR1PBF, IRF6662TRPBF trades lower gate charge for higher on-resistance and inferior thermal performance, while SiR626DP-T1-GE3 matches R_DS(on) but lacks dual-sided cooling and has reduced C_dv/dt immunity-making IRF6717MTR1PBF uniquely suited for thermally constrained, high-frequency CPU/GPU VRMs.

Availability

IRF6717MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume OEM programs.

Supply support for IRF6717MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with headquarters in Munich, Germany.

The DirectFET™ product line was developed specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure-prioritizing ultra-low R_DS(on), minimized package inductance, and dual-sided thermal extraction.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6717MTR1PBF supports 22 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board with double-sided cooling per AN-1035 guidelines. Derating follows a linear 0.022 W/°C factor above 70°C ambient.

Does this MOSFET require a gate resistor for stability in synchronous buck applications?

Yes-a gate resistor (typically 1–5 Ω) is required to dampen gate oscillation and control dV/dt during turn-on/turn-off. The device's low gate resistance (1.3–2.2 Ω typ.) and high transconductance (140 S) make external RG essential to limit peak gate current and prevent ringing-induced false turn-on in high-speed layouts.

Can the IRF6717MTR1PBF be used in avalanche mode for circuit protection?

Yes-it is rated for repetitive unclamped inductive switching (UIS) with E_AS = 290 mJ at T_J = 25°C and I_AS = 30 A. However, avalanche operation must be limited to single-pulse events with strict pulse width (<400 μs) and duty cycle (<2%) constraints to avoid cumulative junction temperature rise beyond 150°C.

How does the DirectFET™ package affect PCB layout compared to SO-8?

The DirectFET™ M package uses a non-leaded, top-and-bottom metalized structure requiring dedicated stencil apertures and substrate pad design per AN-1035. Unlike SO-8, it has no leads-so solder paste volume, reflow profile, and thermal pad connectivity must be validated separately. Layout must provide separate thermal vias under the bottom drain land and avoid silkscreen over top-drain metal.

IRF6717MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.25mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6750 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 96W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6717MTR1PBF FAQ

1.How can I place an order for IRF6717MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6717MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6717MTR1PBF reliable?

The price and inventory of IRF6717MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6717MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6717MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6717MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6717MTR1PBF?

IRF6717MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6717MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6717MTR1PBF?

For technical support, including IRF6717MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6717MTR1PBF requirements.

6.How does Aetrix verify that IRF6717MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6717MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6717MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6717MTR1PBF?

All IRF6717MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6717MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6717MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6717MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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