Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL2505STRLPBF

Part No.:
IRL2505STRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL2505STRLPBF.pdf
Description:
MOSFET N-CH 55V 104A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,962

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL2505STRLPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 110 A, 0.008 Ω (typ. at VGS = 10 V) N-channel HEXFET® Power MOSFET in TO-262 (DPAK) package, designed for high-current DC-DC conversion, motor control, and power switching in industrial and automotive systems.

For engineers reviewing the IRL2505STRLPBF datasheet, IRL2505STRLPBF pinout, IRL2505STRLPBF application, or IRL2505STRLPBF equivalent, key selection criteria include RDS(on) at low gate drive (≤ 0.012 Ω @ 4.5 V), 175 °C maximum junction temperature, avalanche energy rating (EAS = 120 mJ), and lead-free TO-262 surface-mount compatibility.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide and trench-enhanced body diode for low conduction loss and fast, soft reverse recovery. It operates with gate threshold voltage VGS(th) of 1.0–2.0 V and supports logic-level drive down to 4.5 V, enabling direct interface with microcontrollers and PWM controllers without level-shifting.

Thermal performance is defined by RθJC = 1.0 °C/W and RθJA = 62 °C/W (on FR-4, 1 in² copper), supporting continuous ID up to 90 A at TC = 100 °C. Avalanche ruggedness is validated per single-pulse test (VDD = 25 V, ID = 54 A).

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum drain-source blocking voltage before avalanche onset; sets safe operating range for 48 V bus and 24 V motor drives.
RDS(on) max @ 10 V0.008 Ω - Confirmed on-resistance at standard gate drive; enables <1 W conduction loss at 100 A.
RDS(on) max @ 4.5 V0.012 Ω - Verified low-voltage on-resistance; ensures full enhancement with 3.3 V/5 V logic outputs.
ID continuous @ TC=100°C90 A - Sustained current capability under real heatsink conditions; defines PCB trace and thermal pad sizing.
EAS120 mJ - Single-pulse avalanche energy rating at TJ = 25 °C; validates robustness against inductive turn-off transients.
QG total71 nC - Measured gate charge at VGS = 10 V; determines driver strength requirement and switching loss trade-off.
tf42 ns - Typical fall time at ID = 54 A, VDD = 44 V; constrains minimum PWM frequency and EMI filter design.

Pinout & Package

IRL2505STRLPBF uses the TO-262 (DPAK) surface-mount package with exposed drain pad for thermal conduction. The package measures 10.16 × 4.70 × 2.39 mm (0.400 × 0.185 × 0.094 in) and features lead-free (Pb-free) finish per RoHS.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically connected to exposed metal tab; must be soldered to large copper pour for thermal and electrical integrity.
SourceReference node for gate drive and current returnLow-inductance connection point for sense resistor placement and gate driver ground reference.
GateControl input for channel conductionHigh-impedance node requiring <100 pF layout capacitance; sensitive to ringing without proper gate resistor.

Key Features

FeatureDesign Value
Logic-level gate driveGuaranteed turn-on at VGS ≥ 4.5 V - eliminates need for external gate driver in MCU-based power stages.
Ultra-low RDS(on)0.008 Ω @ 10 V - reduces conduction losses by >30% vs. legacy 55 V MOSFETs in same package.
175 °C rated junctionExtended thermal margin - supports operation in sealed enclosures or high ambient environments without derating.
Avalanche-rated120 mJ EAS - withstands repetitive inductive switching stress without degradation in motor H-bridge or solenoid drivers.
Lead-free (Pb-free)RoHS-compliant finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow assembly.

Applications

Brushless DC Motor ControlAutomotive Body Control Module

Use Scenario: High-side and low-side switching in 3-phase BLDC inverter for HVAC blowers and power seats.

IC Role / Device Role / Timing Role: Power switch in half-bridge leg; handles 90 A peak phase current with <100 ns switching transitions.

Use Value: Low RDS(on) minimizes heat generation in confined chassis space; 175 °C rating avoids thermal shutdown during sustained stall conditions.

Use Scenario: Load switching for headlights, fog lamps, and window lift motors in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: High-current load switch replacing electromechanical relays; driven directly by 5 V microcontroller GPIO.

Use Value: Logic-level gate enables direct MCU control; avalanche rating absorbs inductive kickback from lamp filaments and motor windings.

Industrial DC-DC ConverterServer PSU Primary Switch

Use Scenario: Synchronous rectification and primary-side switching in isolated 48 V–12 V buck converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch in hard-switched forward topology; operated at 100–250 kHz with 4.5 V gate drive.

Use Value: Low QG and fast tf reduce switching losses; TO-262 package allows automated reflow assembly and high-power density layout.

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified server power supplies using LLC resonant topology.

IC Role / Device Role / Timing Role: High-efficiency switching element handling 110 A pulsed drain current; synchronized to ZVS gate drive signals.

Use Value: 0.008 Ω RDS(on) cuts conduction loss below 1 W at full load; MSL-1 rating ensures reliability through multiple reflow cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF3205PBFRDS(on) = 0.008 Ω @ 10 V but VDSS = 55 V; higher QG (71 nC vs. 80 nC); no 4.5 V drive guarantee.Not rated for logic-level drive; requires 10 V gate driver; less suitable for 3.3 V MCU interfaces.Prefer IRL2505STRLPBF when gate drive voltage ≤4.5 V or thermal margin >150 °C is required.
STP110N55F6RDS(on) = 0.0075 Ω @ 10 V; VDSS = 55 V; QG = 65 nC; 175 °C rated; but TO-220 package (not surface-mount).Through-hole mounting only; incompatible with DPAK footprint; higher RθJA limits high-frequency use.Choose STP110N55F6 only if through-hole assembly is mandated and thermal pad area is unrestricted.

Compared with IRF3205PBF and STP110N55F6, IRL2505STRLPBF uniquely combines logic-level drive, TO-262 surface-mount compatibility, and 175 °C junction rating-making it optimal for space-constrained, high-reliability industrial and automotive power stages where gate drive headroom and thermal headroom are limited.

Availability

IRL2505STRLPBF is available at Aetrix Electronics and suitable for brushless DC motor control, automotive body electronics, and industrial DC-DC converter designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRL2505STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL2505STRLPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching applications where minimal gate drive voltage and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for IRL2505STRLPBF at 100°C case temperature?

The maximum continuous drain current is 90 A at TC = 100 °C, as specified in the official Infineon datasheet (document number IRL2505, Rev. C). This rating assumes adequate PCB copper area for thermal conduction and accounts for RDS(on) increase with temperature. Derating is required above this temperature.

Does IRL2505STRLPBF support gate drive voltages below 4.5 V?

No - while VGS(th) is as low as 1.0 V, the device is not characterized or guaranteed for reliable operation below 4.5 V. The datasheet specifies RDS(on) ≤ 0.012 Ω only at VGS = 4.5 V, and switching parameters (tr, tf) are not validated below that voltage.

Is the TO-262 package of IRL2505STRLPBF compatible with standard DPAK footprints?

Yes - the TO-262 (DPAK) package has standardized mechanical dimensions (10.16 × 4.70 mm body, 2.39 mm height) and pin pitch (2.54 mm), matching IPC-7351B DPAK footprint. The exposed drain tab requires thermal via pattern per Infineon's layout guidelines for optimal RθJA.

How does the avalanche energy rating of IRL2505STRLPBF compare to similar 55 V MOSFETs?

At 120 mJ (single-pulse, TJ = 25 °C), IRL2505STRLPBF exceeds typical 55 V MOSFETs like IRF3205 (95 mJ) and STP110N55F6 (105 mJ). This higher EAS reflects optimized silicon process and body diode design, making it especially suited for inductive load switching without snubbers.

IRL2505STRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL2505STRLPBF FAQ

1.How can I place an order for IRL2505STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505STRLPBF reliable?

The price and inventory of IRL2505STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL2505STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505STRLPBF?

IRL2505STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505STRLPBF?

For technical support, including IRL2505STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505STRLPBF requirements.

6.How does Aetrix verify that IRL2505STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL2505STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL2505STRLPBF?

All IRL2505STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505STRLPBF part is unused and in its original packaging.

Return procedure for IRL2505STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL2505STRLPBF Tags

  • IRL2505STRLPBF
  • IRL2505STRLPBF PDF
  • IRL2505STRLPBF Datasheet
  • IRL2505STRLPBF Specifications
  • IRL2505STRLPBF Images
  • Infineon Technologies
  • Infineon Technologies IRL2505STRLPBF
  • Buy IRL2505STRLPBF
  • IRL2505STRLPBF Price
  • IRL2505STRLPBF Distributor
  • IRL2505STRLPBF Supplier
  • IRL2505STRLPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER