My Inquiry
My Account
Infineon Technologies IPC302N08N3X1SA1
- Part No.:
- IPC302N08N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N08N3X1SA1.pdf
- Description:
- MOSFET N-CH 80V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:5,918
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPC302N08N3X1SA1 from Infineon is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It features 80 V V(BR)DSS, 1.2 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 6.7 × 4.5 mm² die size, and NiV backside metallization - used as a primary switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IPC302N08N3X1SA1 datasheet, IPC302N08N3X1SA1 pinout (Drain/Gate/Source terminals), IPC302N08N3X1SA1 application in high-current switching stages, or IPC302N08N3X1SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified die-level electrical specs, terminal mapping, thermal interface guidance, and substitution analysis against validated alternatives.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage ranging from 2.0 V to 3.5 V and supports dynamic characterization per IPB025N08N3G reference packaging. Its wafer-level test conditions specify RDS(on) ≤ 100 mΩ at VGS = 10 V and ID = 2.0 A, with avalanche energy EAS = 45 mJ under ID = 30 A and RGS = 25 Ω.
The device uses AlCu frontside metallization and nitride passivation on edge structures only. Backside metallization is NiV, enabling solder or epoxy die attach. It is classified as ESD-sensitive per MIL-STD-883C and subject to AQL 0.65 visual inspection per failure catalogue.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 80 V - maximum drain-source blocking voltage before avalanche onset |
| RDS(on) | 1.2 mΩ (typ.) at VGS = 10 V, ID = 2.0 A - defines conduction loss in high-current switching paths |
| VGS(th) | 2.0–3.5 V - gate voltage range for reliable turn-on in logic-level gate drive systems |
| EAS | 45 mJ - single-pulse avalanche energy handling capability under defined test conditions |
| Die size | 6.7 × 4.5 mm² - physical footprint for thermal and mechanical layout planning in custom packages |
| Thickness | 175 µm - critical for thermal resistance modeling and die attach process selection |
Pinout & Package
IPC302N08N3X1SA1 is supplied as a bare die without leadframe or molded package. Terminal metallization is AlCu on frontside; terminals are identified as Drain (entire bottom surface), Gate (central pad), and Source (peripheral ring). Die thickness is 175 µm; backside metallization is NiV for solder or epoxy attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (high-side or low-side switch node) | Entire backside surface - requires low-thermal-resistance mounting to heatsink or PCB copper |
| Gate | Control electrode for channel formation | Central top-side pad - sensitive to ESD; requires controlled gate drive impedance to limit dV/dt-induced shoot-through |
| Source | Reference node for gate drive and current return path | Peripheral top-side ring - must be low-inductance connected to power ground plane in high-frequency switching layouts |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables standard gate-drive architecture without negative bias; compatible with common microcontroller GPIO outputs |
| AlCu frontside metallization | Provides robust wire-bondability and low electromigration risk under high pulsed current |
| NiV backside metallization | Supports both solder reflow and conductive epoxy die attach for flexible thermal management |
| Nitride edge passivation | Prevents moisture ingress and field concentration at die periphery, improving long-term reliability |
Applications
| Industrial DC-DC Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 48 V input to 12 V output synchronous buck converter in programmable logic controller power supplies. IC Role / Device Role / Timing Role: Primary high-side switching element operating at 200–500 kHz with gate-driven synchronous rectification. Use Value: 1.2 mΩ RDS(on) minimizes conduction loss at 30 A load current, enabling >95% peak efficiency at full load. | Use Scenario: 24 V BLDC motor control stage in automated material handling equipment. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated via PWM with dead-time control. Use Value: 45 mJ EAS rating ensures robustness against inductive flyback spikes during rapid current reversal. |
| Solar Microinverter Stage | UPS Inverter Output Stage |
Use Scenario: DC-link switching cell in transformerless solar microinverter with MPPT tracking. IC Role / Device Role / Timing Role: High-frequency switching transistor in interleaved boost stage feeding H-bridge inverter. Use Value: 80 V V(BR)DSS accommodates 60 V PV string transients while maintaining margin for overvoltage clamping. | Use Scenario: Output bridge switch in online double-conversion UPS delivering clean 230 VAC sine wave. IC Role / Device Role / Timing Role: Low-side IGBT/MOSFET co-driver in full-bridge topology with active clamp snubber. Use Value: 175 µm die thickness enables tight thermal coupling to copper baseplate, reducing junction-to-case ΔT by ~12% vs. thicker dies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB025N08N3 G | Same die design, but packaged in P-TO263-3; RDS(on) tested post-packaging (2.51 mΩ) | Used where standardized through-hole mounting and pre-characterized thermal data are required | Select when board-level assembly constraints favor discrete packaged devices over bare-die integration |
| IPP025N08N3 | Identical OptiMOS™3 die variant in PG-TO220 package; same V(BR)DSS and VGS(th) range | Targeted at prototyping, lab validation, and lower-volume industrial controls with manual soldering | Choose for quick evaluation without custom die attach infrastructure or wire bonding setup |
Compared with IPB025N08N3 G and IPP025N08N3, IPC302N08N3X1SA1 offers direct thermal path optimization and layout flexibility for high-density power modules, while sacrificing standardized mounting and pre-validated thermal curves - making it optimal for volume-custom power assemblies where die-level performance and thermal control are prioritized.
Availability
IPC302N08N3X1SA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive half-bridges, and solar microinverter stages requiring stable component supply and wafer-level traceability.
Supply support for IPC302N08N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing facilities.
The OptiMOS™3 product line targets high-efficiency power conversion in industrial, renewable energy, and motor control systems, emphasizing low RDS(on), fast switching, and rugged avalanche performance at wafer level.
FAQ
What is the recommended gate drive voltage for IPC302N08N3X1SA1?
The device is characterized at VGS = 10 V for RDS(on) specification, and its VGS(th) range is 2.0–3.5 V. For full enhancement and minimal conduction loss, a gate drive of 10–12 V is recommended. Driving above 15 V provides no significant RDS(on) improvement and increases gate oxide stress risk.
Is IPC302N08N3X1SA1 suitable for automotive applications?
No - this bare-die variant is not qualified to AEC-Q101 or automotive-grade reliability standards. Infineon explicitly states that use in automotive, aviation, or life-support systems requires express written approval. Industrial-grade qualification and AQL 0.65 visual inspection apply only to non-safety-critical applications.
How should the backside (Drain) of IPC302N08N3X1SA1 be thermally managed?
The NiV-metallized backside must be attached to a thermally conductive substrate using solder (e.g., AuSn or PbSn) or conductive epoxy. Thermal interface resistance depends strongly on bondline thickness and voiding; target < 25 µm bondline and < 5% void area to achieve junction-to-baseplate Rth ≤ 0.8 K/W in optimized assemblies.
Does IPC302N08N3X1SA1 include integrated ESD protection?
No - it is classified as an electrostatic discharge sensitive device per MIL-STD-883C. No on-die ESD protection structures are implemented. System-level ESD safeguards (e.g., series gate resistors, TVS diodes, handling protocols) must be applied externally during assembly and operation.
IPC302N08N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N08N3X1SA1 FAQ
1.How can I place an order for IPC302N08N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N08N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N08N3X1SA1 reliable?
The price and inventory of IPC302N08N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N08N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N08N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N08N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N08N3X1SA1?
IPC302N08N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N08N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N08N3X1SA1?
For technical support, including IPC302N08N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N08N3X1SA1 requirements.
6.How does Aetrix verify that IPC302N08N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N08N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N08N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N08N3X1SA1?
All IPC302N08N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N08N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N08N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302N08N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPC302N08N3X1SA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
