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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPW65R420CFDFKSA1MOSFET N-CH 650V 8.7A TO247-3 Infineon Technologies |
7,987 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
SPP15P10PHXKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
9,727 | 0.00 |
|
Datasheet |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48 nC @ 10 V | ±20V | 1280 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRF6898MTRPBFMOSFET N-CH 25V 35A DIRECTFET Infineon Technologies |
6,585 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | 2.1V @ 100µA | 62 nC @ 4.5 V | ±16V | 5435 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF6894MTRPBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
5,670 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39 nC @ 4.5 V | ±16V | 4160 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF6811STRPBFMOSFET N CH 25V 19A DIRECTFET Infineon Technologies |
6,596 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17 nC @ 4.5 V | ±16V | 1590 pF @ 13 V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
|
IRF6811STR1PBFMOSFET N CH 25V 19A DIRECTFET Infineon Technologies |
4,855 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17 nC @ 4.5 V | ±16V | 1590 pF @ 13 V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
|
|
IRF6894MTR1PBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
3,296 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39 nC @ 4.5 V | ±16V | 4160 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
|
IRF6898MTR1PBFMOSFET N-CH 25V 35A DIRECTFET Infineon Technologies |
7,913 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | 2.1V @ 100µA | 62 nC @ 4.5 V | ±16V | 5435 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRFB812PBFMOSFET N CH 500V 3.6A TO220AB Infineon Technologies |
3,680 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±20V | 810 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFI4410ZGPBFMOSFET N-CH 100V 43A TO220AB FP Infineon Technologies |
8,662 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 10V | 9.3mOhm @ 26A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±30V | 4910 pF @ 50 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
