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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPD65R660CFDBTMA1 MOSFET N-CH 650V 6A TO252-3 Infineon Technologies	2,884	RFQ	Datasheet	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	6A (Tc)	10V	660mOhm @ 2.1A, 10V	4.5V @ 200µA	22 nC @ 10 V	±20V	615 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3
BSB012NE2LX MOSFET N-CH 25V 37A/170A 2WDSON Infineon Technologies	4,230	RFQ	Datasheet	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	37A (Ta), 170A (Tc)	4.5V, 10V	1.2mOhm @ 30A, 10V	2V @ 250µA	67 nC @ 10 V	±20V	4900 pF @ 12 V	-	2.8W (Ta), 57W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2, CanPAK M™
BSS84PH6327XTSA1 MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies	2,496	RFQ	Datasheet	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	170mA (Ta)	4.5V, 10V	8Ohm @ 170mA, 10V	2V @ 20µA	1.5 nC @ 10 V	±20V	19 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23
SN7002NH6327XTSA1 MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies	5,790	RFQ	Datasheet	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	1.8V @ 26µA	1.5 nC @ 10 V	±20V	45 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT23
BUZ30AHXKSA1 MOSFET N-CH 200V 21A TO220-3 Infineon Technologies	3,465	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	21A (Tc)	10V	130mOhm @ 13.5A, 10V	4V @ 1mA	-	±20V	1900 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
BUZ31L H MOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies	5,954	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	13.5A (Tc)	5V	200mOhm @ 7A, 5V	2V @ 1mA	-	±20V	1600 pF @ 25 V	-	95W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
BUZ32 H MOSFET N-CH 200V 9.5A TO220-3 Infineon Technologies	9,378	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	9.5A (Tc)	10V	400mOhm @ 6A, 10V	4V @ 1mA	-	±20V	530 pF @ 25 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
BUZ73H3046XKSA1 MOSFET N-CH 200V 7A TO220-3 Infineon Technologies	3,025	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7A (Tc)	10V	400mOhm @ 4.5A, 10V	4V @ 1mA	-	±20V	530 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
BUZ73A H MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies	8,993	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	5.5A (Tc)	10V	600mOhm @ 4.5A, 10V	4V @ 1mA	-	±20V	530 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
BUZ73A H3046 MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies	9,890	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	5.5A (Tc)	10V	600mOhm @ 4.5A, 10V	4V @ 1mA	-	±20V	530 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3

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