Infineon Technologies BUZ73H3046XKSA1

Overview

BUZ73H3046XKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 7 A continuous drain current at TC = 28 °C, and 0.4 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A. It features avalanche-rated ruggedness (EAS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage at IF = 14 A, and TO-220-3 package for industrial motor control and DC-DC converter switching stages.

For engineers reviewing the BUZ73H3046XKSA1 datasheet, BUZ73H3046XKSA1 pinout, BUZ73H3046XKSA1 application, or BUZ73H3046XKSA1 equivalent, key selection criteria include its 200 V V(BR)DSS rating, 7 A ID capability, 0.4 Ω RDS(on), avalanche energy handling (120 mJ), and thermal resistance (RthJC ≤ 3.1 K/W) in high-reliability power switching designs.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, with gate threshold voltage (VGS(th)) ranging from 2.1 to 4.0 V and transconductance (gfs) of 3–4.2 S. Its dynamic characteristics include Ciss = 400–530 pF, Crss = 45–70 pF, and fast switching times: td(on) ≤ 15 ns, tr ≤ 60 ns, td(off) ≤ 75 ns, tf ≤ 40 ns under standard test conditions.

The integrated body diode supports synchronous rectification and freewheeling functions, with IS = 7 A continuous, ISM = 28 A pulsed, VSD = 1.3–1.7 V, trr = 200 ns, and Qrr = 0.6 µC - enabling use in flyback, buck, and half-bridge converters where reverse recovery performance impacts efficiency and EMI.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (lead-free, halogen-free per IEC61249-2-21), through-hole mounting with isolated tab (drain-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM20 and IRF640NPBF, BUZ73H3046XKSA1 offers superior avalanche ruggedness (120 mJ vs. ≤60 mJ), tighter VGS(th) distribution (2.1–4.0 V), and optimized Crss/Ciss ratio for stable gate drive - making it preferred for motor drives and regulated DC-DC where reliability under transient stress is essential.

Availability

BUZ73H3046XKSA1 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and lighting ballast applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUZ73H3046XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73H3046XKSA1 belongs to Infineon's SIPMOS® family of high-voltage power MOSFETs, designed specifically for rugged, high-reliability switching in industrial automation, motor drives, and offline power supplies.

FAQ

What is the maximum safe operating voltage for BUZ73H3046XKSA1 in continuous DC operation?

The absolute maximum drain-source voltage is 200 V, specified as V(BR)DSS at ID = 0.25 mA and Tj = 25 °C. Derating is required above 25 °C: V(BR)DSS decreases by ~0.1 V/°C, reaching ~180 V at 150 °C junction temperature. For reliable long-term operation, design margin should limit steady-state VDS to ≤160 V.

Can BUZ73H3046XKSA1 be driven directly from a 3.3 V microcontroller GPIO?

No - its VGS(th) min is 2.1 V, but full enhancement requires ≥10 V to achieve rated RDS(on) ≤ 0.4 Ω. At 3.3 V, RDS(on) exceeds 2 Ω, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required for reliable switching at rated current.

Is the body diode suitable for synchronous rectification in a 250 kHz buck converter?

Yes - with trr = 200 ns and Qrr = 0.6 µC, the body diode supports synchronous rectification up to ~300 kHz in well-designed layouts. However, external Schottky diodes may still be preferred for lowest EMI and highest efficiency due to lower VSD and near-zero Qrr.

Does BUZ73H3046XKSA1 require a heatsink for 7 A continuous operation?

Yes - at 7 A and RDS(on) = 0.4 Ω, conduction loss is ~20 W. With RthJC ≤ 3.1 K/W and ambient ≤ 50 °C, even a modest heatsink (RthHA ≈ 10 K/W) is required to hold Tj below 150 °C. Without heatsinking, junction temperature would exceed safe limits within seconds.