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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ73A H

Name: BUZ73A H
Brand: Infineon Technologies
SKU: BUZ73A H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ73A H

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ73A H.pdf

Description:: MOSFET N-CH 200V 5.5A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,993

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Product details

Overview

BUZ73A H from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 5.5 A continuous drain current at TC = 37 °C, and 0.6 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A. It features avalanche-rated ruggedness (EAS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage, and TO-220-3 package for industrial switching applications including DC motor control and SMPS primary-side switching.

For engineers reviewing the BUZ73A H datasheet, BUZ73A H pinout, BUZ73A H application, or BUZ73A H equivalent, key selection criteria include its 200 V V(BR)DSS rating, 0.6 Ω RDS(on), 120 mJ single-pulse avalanche energy, thermal resistance RthJC ≤ 3.1 K/W, and halogen-free compliance per IEC61249-2-21 - all critical for reliable high-voltage, medium-current switching in thermally constrained environments.

Technical Context

This discrete power MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports fast switching via low input capacitance (Ciss = 400–530 pF) and sub-15 ns turn-on delay. Its transconductance (gfs = 3–4.2 S) and low output capacitance (Coss = 85–130 pF) enable stable operation under hard-switching conditions up to 100 kHz.

The integrated body diode exhibits trr = 200 ns and Qrr = 0.6 µC at VR = 100 V, supporting moderate-frequency freewheeling in inductive loads. Thermal design is enabled by RthJC ≤ 3.1 K/W and safe operating area validated for DC, 1 ms, and 100 µs pulse widths at TC = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage before avalanche onset; defines use in 100–160 V DC bus or 120/230 V AC line-connected topologies.
I_D (cont)	5.5 A at T_C = 37 °C - Continuous conduction capability with heatsink; derates to ~3.5 A at T_C = 100 °C per curve on Page 5.
R_DS(on)	0.6 Ω max at V_GS = 10 V, I_D = 4.5 A - Determines conduction loss: ~18.2 W at 5.5 A, requiring thermal management.
E_AS	120 mJ - Single-pulse avalanche energy at I_D = 7 A, V_DD = 50 V - Enables robustness against inductive switching transients without external snubbers.
C_iss	400–530 pF at V_DS = 25 V - Governs gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers.
V_GS(th)	2.1–4.0 V - Threshold range ensures reliable turn-on with 5 V or 10 V logic-level gate drive; avoids unintended conduction near 0 V.
Q_Gate	~24 nC typ - Total gate charge at I_D(puls) = 14 A - Sets minimum gate driver slew rate and influences switching loss trade-off.

Pinout & Package

Package: PG-TO-220-3 (standard through-hole, isolated tab, Pb-free, halogen-free).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; requires ≥10 V for full enhancement; sensitive to ESD; must be driven with low-impedance path to avoid oscillation.
Pin 2	Drain (D)	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3	Source (S)	Return path for load current; common reference for gate drive; connects to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
Avalanche-rated operation	120 mJ single-pulse EAS enables unclamped inductive switching without external protection components.
Low R_DS(on) × Q_G figure-of-merit	0.6 Ω × 24 nC = 14.4 Ω·nC - balances conduction and switching losses for medium-frequency SMPS designs.
Integrated body diode	1.3–1.7 V V_SD at I_F = 14 A supports freewheeling in buck/forward converters without discrete diode.
Halogen-free construction	Complies with IEC61249-2-21 - meets RoHS and environmental requirements for industrial and consumer end equipment.

Applications

DC Motor Control

Switch-Mode Power Supply

Use Scenario: Bidirectional 24–48 V brushed DC motor drive with PWM switching at 20–50 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor current direction and torque.

Use Value: 200 V rating accommodates back-EMF spikes; 120 mJ EAS prevents failure during sudden motor stall or reversal.

Use Scenario: Primary-side switch in 100–200 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary winding at 65–100 kHz.

Use Value: 0.6 Ω R_DS(on) minimizes conduction loss at 5.5 A peak; low C_iss enables clean gate drive with minimal overshoot.

Industrial Lighting Ballast

Power Factor Correction

Use Scenario: Half-bridge switching stage in electronic HID lamp ballast operating at 20–60 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling resonant tank current and voltage reversal.

Use Value: 200 V V_DS withstands lamp ignition surges up to 180 V; 200 ns trr supports zero-voltage switching transitions.

Use Scenario: Boost switch in active PFC stage for 115/230 V AC input, delivering 150–300 W.

IC Role / Device Role / Timing Role: High-efficiency switching element in continuous conduction mode (CCM) boost topology.

Use Value: Avalanche ruggedness absorbs line surge events; 3.1 K/W R_thJC allows direct mounting to chassis for passive cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DS, 20 A I_D, 0.12 Ω R_DS(on), TO-220 - higher current, lower R_DS(on), but no specified EAS rating.	Preferred where higher continuous current and lower conduction loss are prioritized over avalanche robustness.	Select when system-level clamping is implemented externally and thermal headroom permits larger die size.
IRF640NPbF	200 V V_DS, 18 A I_D, 0.18 Ω R_DS(on), TO-220 - lower R_DS(on), higher gfs, but EAS = 65 mJ (half of BUZ73A H).	Suitable for non-avalanche-critical SMPS or linear regulator bypass, but not recommended for unclamped inductive loads.	Choose only if transient overvoltage is suppressed by design and gate drive strength exceeds 2 A peak.

Compared with STP20NM20 and IRF640NPbF, BUZ73A H trades higher R_DS(on) for guaranteed 120 mJ avalanche energy and tighter V_GS(th) tolerance - making it uniquely suited for cost-sensitive, thermally constrained industrial controls where reliability under fault conditions is mandatory.

Availability

BUZ73A H is available at Aetrix Electronics and suitable for DC motor control, switch-mode power supply, industrial lighting ballast, and power factor correction applications requiring stable component supply across multi-year production cycles.

Supply support for BUZ73A H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73A H belongs to Infineon's SIPMOS® family of rugged, high-voltage power MOSFETs designed specifically for industrial switching applications demanding avalanche endurance, thermal stability, and long-term reliability in harsh environments.

FAQ

Is BUZ73A H suitable for 100 kHz switching in a flyback converter?

Yes - with measured td(on) ≤ 15 ns, tr ≤ 60 ns, and Ciss ≤ 530 pF, BUZ73A H supports efficient 100 kHz operation when paired with a 2 A peak gate driver and optimized PCB layout. Conduction loss dominates at this frequency due to RDS(on) = 0.6 Ω, so thermal design must maintain TC ≤ 70 °C.

Does BUZ73A H require a gate resistor for stability?

Yes - a 10–47 Ω series gate resistor is recommended to dampen ringing caused by L_GS/C_iss resonance and prevent spurious turn-on from dv/dt coupling. The resistor value must balance switching speed (lower R = faster) against gate driver stress and EMI.

Can BUZ73A H replace BUZ73A without redesign?

Yes - BUZ73A H is a halogen-free, Pb-free drop-in replacement for BUZ73A with identical electrical specs, pinout, and package. The "H" suffix denotes compliance with IEC61249-2-21; no layout or thermal changes are required for migration.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is +150 °C, but continuous operation should limit Tj to ≤ 130 °C to ensure >10-year lifetime. At TC = 100 °C, ID derates to ~3.5 A; heatsink design must achieve RthJA < 40 K/W for ambient ≤ 50 °C.

BUZ73A H Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ73A H FAQ

1.How can I place an order for BUZ73A H through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73A H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73A H reliable?

The price and inventory of BUZ73A H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73A H is usually 5 days.

3.What payment methods are accepted for BUZ73A H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73A H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73A H?

BUZ73A H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73A H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73A H?

For technical support, including BUZ73A H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73A H requirements.

6.How does Aetrix verify that BUZ73A H is sourced from the original manufacturer or authorized distributors?

All BUZ73A H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73A H meets industry standards.

7.What is the process for return or replacement of BUZ73A H?

All BUZ73A H units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73A H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73A H part is unused and in its original packaging.

Return procedure for BUZ73A H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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