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Infineon Technologies BUZ32 H
- Part No.:
- BUZ32 H
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ32 H.pdf
- Description:
- MOSFET N-CH 200V 9.5A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,378
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Product details
Overview
BUZ32H from Infineon Technologies is an N-channel enhancement-mode SIPMOS power transistor rated for 200 V drain-source voltage, 9.5 A continuous drain current, and 0.4 Ω maximum RDS(on) at VGS = 10 V. It features avalanche energy rating (EAS = 120 mJ), integrated body diode with 1.4–1.7 V forward voltage, and TO-220-3 package for industrial motor control and DC-DC converter switching stages.
For engineers reviewing the BUZ32H datasheet, BUZ32H pinout, BUZ32H application, or BUZ32H equivalent, key selection criteria include its 200 V blocking capability, 75 W thermal dissipation at TC = 25 °C, avalanche ruggedness, gate threshold voltage range (2.1–4.0 V), and suitability for hard-switched flyback and half-bridge topologies requiring robust unclamped inductive switching performance.
Technical Context
This device operates as a unidirectional high-side or low-side switch in DC-fed power converters. Its transconductance (gfs = 3–4.6 S) and input capacitance (Ciss = 400–530 pF) support moderate-speed switching up to ~100 kHz with 50 Ω gate drive.
The integrated body diode exhibits trr = 200 ns and Qrr = 0.6 µC under 100 A/µs di/dt, enabling use in synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 V RMS AC line-derived DC bus with 20% margin for surge and ripple |
| ID (cont) | 9.5 A at TC = 25 °C - delivers up to 1.8 kW output in 48 V battery-fed motor drives with heatsink |
| RDS(on) | 0.4 Ω max at VGS = 10 V - yields ≤3.6 W conduction loss at 9.5 A, enabling <85 °C junction rise with 1.67 K/W RthJC |
| EAS | 120 mJ - withstands single-pulse inductive energy from 2 mH load at 9.5 A without failure |
| tr/tf | 40–60 ns / 30–40 ns - enables clean edge transitions in 50–100 kHz SMPS with minimal switching loss |
| VGS(th) | 2.1–4.0 V - ensures reliable turn-on with standard 5 V logic-level gate drivers while avoiding spurious activation |
Pinout & Package
Package: PG-TO-220-3 (standard through-hole, isolated tab, Pb-free, halogen-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | High-impedance MOSFET control terminal; requires ≤20 V absolute max gate-source voltage |
| Pin 2 | Drain (D) | Main high-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground |
| Pin 3 | Source (S) | Power return path and gate reference node; ties directly to PCB ground plane or low-side shunt |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed 120 mJ single-pulse EAS enables reliable unclamped inductive switching without external snubbers |
| Low gate charge | Typical QG ≈ 20 nC - reduces gate driver power demand and improves switching efficiency at 50–100 kHz |
| Enhanced thermal resistance | RthJC ≤ 1.67 K/W - allows 75 W dissipation with modest heatsinking; junction-to-case path optimized via copper leadframe |
| Body diode with fast recovery | trr = 200 ns, Qrr = 0.6 µC - minimizes reverse recovery loss in freewheeling and synchronous rectifier configurations |
Applications
| Industrial Motor Drive | DC-DC Converter |
|---|---|
|
Use Scenario: 24–48 V brushed DC motor control in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, commutating bidirectional current up to 9.5 A. Use Value: Avalanche ruggedness prevents failure during sudden load disconnection; RDS(on) < 0.4 Ω limits I²R loss to <3.6 W at full load. |
Use Scenario: Primary-side switch in 100–200 W offline flyback converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Hard-switched main power transistor handling 200 V DC link and repetitive inductive turn-off stress. Use Value: EAS = 120 mJ absorbs leakage inductance energy without clamping circuitry, reducing BOM count and layout area. |
| Uninterruptible Power Supply | LED Driver |
|
Use Scenario: Battery backup inverter stage converting 48 V DC to 120/230 V AC via half-bridge topology. IC Role / Device Role / Timing Role: High-side switch operating with bootstrap gate drive, subjected to 200 V blocking and 9.5 A peak current. Use Value: V(BR)DSS = 200 V provides sufficient margin over 170 V DC bus; tr/tf < 60 ns ensures clean PWM edges at 50 kHz switching frequency. |
Use Scenario: Constant-current buck switch in high-bay LED lighting systems with 36–72 V input. IC Role / Device Role / Timing Role: Main power switch regulating LED string current up to 9.5 A with PWM dimming. Use Value: Low RDS(on) and fast switching minimize conduction + switching losses, achieving >94% efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.12 Ω - lower on-resistance but higher Ciss (1100 pF) and no specified EAS | Better conduction efficiency at high current; less suitable for unclamped inductive loads | Prefer when gate drive strength permits higher Ciss and avalanche stress is absent |
| IRF640NPbF | 200 V, 18 A, RDS(on) = 0.18 Ω - higher ID but only 20 mJ EAS, older planar process | Higher current headroom but significantly lower avalanche capability | Select only in non-inductive or snubber-protected circuits where EAS < 120 mJ is acceptable |
Compared with STP20NM20 and IRF640NPbF, BUZ32H trades higher RDS(on) for guaranteed 120 mJ avalanche energy and tighter VGS(th) distribution-making it preferable in cost-sensitive, reliability-critical industrial switching where inductive fault events occur.
Availability
BUZ32H is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for BUZ32H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ32H belongs to Infineon's SIPMOS® family of trench-gate MOSFETs designed specifically for rugged, medium-voltage industrial switching applications demanding high avalanche immunity and long-term reliability under thermal cycling.
FAQ
Is BUZ32H suitable for gate driving with 3.3 V microcontrollers?
No. BUZ32H has a minimum gate threshold voltage of 2.1 V and typical turn-on at ≥4.5 V; 3.3 V logic cannot reliably achieve full enhancement. A gate driver (e.g., TC4427) or level-shifter is required to deliver ≥10 V to ensure RDS(on) ≤ 0.4 Ω and avoid linear-mode overheating.
What is the maximum safe operating temperature for continuous operation?
The BUZ32H junction temperature must not exceed +150 °C. At TC = 100 °C, its continuous drain current derates to ~5.5 A per the ID vs. TC curve on page 5. Thermal design must maintain Tj ≤ 150 °C using RthJC ≤ 1.67 K/W and appropriate heatsink RthCA.
Does BUZ32H require a gate resistor, and what value is recommended?
Yes. A gate resistor controls dV/dt and ringing. For 50 Ω source impedance (per datasheet test condition), a 10–22 Ω series resistor is typical. Lower values (≤10 Ω) reduce switching time but increase EMI; higher values (>47 Ω) slow turn-on/off and raise switching loss.
Can BUZ32H replace BUZ31H in existing designs?
Yes, with verification. BUZ31H is rated for 100 V and 12 A; BUZ32H offers higher voltage (200 V) but lower current (9.5 A) and higher RDS(on). Replacement is valid if voltage stress exceeds 100 V and peak current stays ≤9.5 A-confirm SOA curves and thermal margins in the target application.
BUZ32 H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ32 H FAQ
1.How can I place an order for BUZ32 H through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ32 H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ32 H reliable?
The price and inventory of BUZ32 H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ32 H is usually 5 days.
3.What payment methods are accepted for BUZ32 H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ32 H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ32 H?
BUZ32 H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ32 H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ32 H?
For technical support, including BUZ32 H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ32 H requirements.
6.How does Aetrix verify that BUZ32 H is sourced from the original manufacturer or authorized distributors?
All BUZ32 H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ32 H meets industry standards.
7.What is the process for return or replacement of BUZ32 H?
All BUZ32 H units undergo pre-shipment inspection (PSI). If there is an issue with BUZ32 H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ32 H part is unused and in its original packaging.
Return procedure for BUZ32 H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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