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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ73A H3046

Name: BUZ73A H3046
Brand: Infineon Technologies
SKU: BUZ73A H3046
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ73A H3046

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ73A H3046.pdf

Description:: MOSFET N-CH 200V 5.5A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BUZ73A H3046 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 5.5 A continuous drain current at TC = 37 °C, and 0.6 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A. It features avalanche energy rating (EAS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage, and TO-220-3 package for industrial switching applications including motor control and DC-DC converters.

For engineers reviewing the BUZ73A H3046 datasheet, BUZ73A H3046 pinout, BUZ73A H3046 application, or BUZ73A H3046 equivalent, key selection criteria include its 200 V blocking capability, 5.5 A thermal-limited current, 0.6 Ω on-resistance, avalanche ruggedness, and TO-220-3 leadframe thermal performance under pulsed and DC loads.

Technical Context

This device operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports fast switching via low input capacitance (Ciss = 400–530 pF) and short turn-on/turn-off delays (td(on) ≤ 15 ns, td(off) ≤ 75 ns). Its transconductance (gfs = 3–4.2 S) and dynamic parameters are specified at VDS ≥ 2×ID×RDS(on)max to ensure stable gain across operating conditions.

The integrated body diode enables freewheeling in inductive loads, with reverse recovery time trr ≤ 200 ns and Qrr ≤ 0.6 µC under VR = 100 V, IF = IS, diF/dt = 100 A/µs. Thermal resistance RthJC ≤ 3.1 K/W ensures efficient heat transfer from chip to case in high-power pulse operation.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	200 V - Maximum drain-source blocking voltage for reliable operation in 100–150 V bus systems with margin.
ID (continuous)	5.5 A at TC = 37 °C - Continuous current capability limited by package thermal resistance and junction temperature.
RDS(on) max	0.6 Ω at VGS = 10 V, ID = 4.5 A - On-state resistance defining conduction loss and thermal rise in linear and switching modes.
EAS	120 mJ - Single-pulse avalanche energy rating enabling robustness against inductive load switching transients.
Ciss	400–530 pF at VGS = 0 V, VDS = 25 V - Input capacitance determining gate drive strength requirement and switching speed trade-offs.
trr / Qrr	≤200 ns / ≤0.6 µC - Body diode reverse recovery metrics critical for minimizing switching loss and voltage overshoot in flyback and half-bridge topologies.
RthJC	≤3.1 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting for sustained 40 W power dissipation.

Pinout & Package

BUZ73A H3046 is housed in a PG-TO-220-3 plastic package with isolated tab (drain-connected), standard through-hole mounting, and Pb-free/halogen-free compliance per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal requiring 2.1–4.0 V threshold; sensitive to ESD; must be driven with low-impedance source to minimize switching losses.
Pin 2	Drain (D)	Main high-side current path; electrically connected to metal tab; requires isolation from heatsink unless referenced to same potential.
Pin 3	Source (S)	Return path for load current; reference node for gate drive; forms common source configuration with gate control loop.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse EAS = 120 mJ enables safe inductive switching without external snubbers in relay/motor drivers.
Low RDS(on) at 10 V drive	0.6 Ω max reduces conduction loss to <1.8 W at 5.5 A, lowering thermal stress in compact PCB layouts.
Integrated body diode	Forward voltage 1.3–1.7 V at IF = 14 A supports freewheeling in buck, flyback, and H-bridge circuits without discrete diode.
Fast switching dynamics	td(on)/tr ≤ 15/60 ns and td(off)/tf ≤ 75/40 ns enable >100 kHz operation with minimal overlap loss in SMPS designs.
Thermal robustness	RthJC ≤ 3.1 K/W allows 40 W dissipation at TC = 25 °C, supporting high-duty-cycle operation with passive heatsinking.

Applications

Motor Control

DC-DC Converters

Use Scenario: Driving brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz and peak currents up to 22 A.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional current and inductive kickback.

Use Value: Avalanche rating absorbs back-EMF spikes; low RDS(on) minimizes I²R heating during stall conditions.

Use Scenario: Primary-side switch in non-isolated buck regulators delivering 5–24 V outputs at 3–5 A continuous load.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor controlling duty cycle and energy transfer timing.

Use Value: Fast trr/Qrr and low Ciss reduce switching loss and improve efficiency above 90% at 100 kHz operation.

Power Supplies

Lighting Ballasts

Use Scenario: Secondary-side synchronous rectification in offline AC-DC adapters with universal input (85–265 VAC).

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes to reduce forward drop and improve thermal management.

Use Value: Integrated body diode with 1.3–1.7 V VF enables zero-voltage switching compatibility in quasi-resonant topologies.

Use Scenario: Lamp current regulation in electronic CFL and LED driver circuits with dimming control.

IC Role / Device Role / Timing Role: Current-limiting switch modulating lamp power via phase-cut or PWM dimming signals.

Use Value: Stable VGS(th) over -55 to +150 °C ensures consistent turn-on behavior across ambient temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V VDS, 20 A ID, RDS(on) = 0.22 Ω - higher voltage rating but larger die and slower switching (Ciss = 1200 pF).	Suitable for higher bus voltages (>300 V) but less optimal for 200 V systems due to higher gate charge and lower switching efficiency.	Select when system requires >300 V blocking and can accommodate higher drive power and layout area.
IRF640NPbF	200 V VDS, 18 A ID, RDS(on) = 0.18 Ω - lower on-resistance but no guaranteed avalanche rating (EAS not specified).	Better conduction loss in high-current DC loads, but unsuitable for unclamped inductive switching without external protection.	Prefer where avalanche ruggedness is not required and thermal design prioritizes low RDS(on) over transient robustness.

Compared with STP20NM50FP and IRF640NPbF, BUZ73A H3046 offers balanced trade-offs: verified 200 V/5.5 A operation with guaranteed avalanche energy, moderate RDS(on), and fast switching-ideal for cost-sensitive, thermally constrained industrial controls where reliability under transient stress is mandatory.

Availability

BUZ73A H3046 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and lighting ballast applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for BUZ73A H3046 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BUZ73A belongs to Infineon's SIPMOS® family of discrete power MOSFETs designed specifically for rugged, high-reliability industrial switching-emphasizing avalanche tolerance, thermal stability, and TO-220 compatibility for legacy and new designs.

FAQ

What is the maximum gate-source voltage rating for BUZ73A H3046?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with gate resistors selected to limit dV/dt-induced ringing while maintaining <15 ns turn-on delay. Gate drive circuits must include clamping diodes if negative transients are possible.

Does BUZ73A H3046 have a specified avalanche current rating?

Yes, the periodic avalanche current IAR is rated at 7 A, and single-pulse avalanche energy EAS is 120 mJ under defined test conditions (ID = 7 A, VDD = 50 V, L = 3.67 mH, RGS = 25 Ω, Tj = 25 °C). This rating is validated per JEDEC JESD24-11 and applies only to unclamped inductive switching events within specified limits.

Is the TO-220 tab electrically isolated in BUZ73A H3046?

Yes, the metal tab is internally connected to the drain (Pin 2) but electrically isolated from the leads via molded plastic. When mounted to a heatsink, electrical isolation must be maintained using insulating pads or shoulder washers unless the heatsink is referenced to drain potential. The package meets DIN humidity category E and IEC climatic category 55/150/56.

How does RDS(on) vary with temperature in BUZ73A H3046?

RDS(on) increases with junction temperature, reaching approximately 1.4 Ω at Tj = 150 °C (typical curve, Page 7). At ID = 4.5 A and VGS = 10 V, resistance rises ~0.01 Ω/°C above 25 °C. Designers must derate current or increase heatsinking to maintain RDS(on) ≤ 0.6 Ω in high-ambient environments.

BUZ73A H3046 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ73A H3046 FAQ

1.How can I place an order for BUZ73A H3046 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73A H3046 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73A H3046 reliable?

The price and inventory of BUZ73A H3046 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73A H3046 is usually 5 days.

3.What payment methods are accepted for BUZ73A H3046?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73A H3046 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73A H3046?

BUZ73A H3046 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73A H3046 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73A H3046?

For technical support, including BUZ73A H3046 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73A H3046 requirements.

6.How does Aetrix verify that BUZ73A H3046 is sourced from the original manufacturer or authorized distributors?

All BUZ73A H3046 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73A H3046 meets industry standards.

7.What is the process for return or replacement of BUZ73A H3046?

All BUZ73A H3046 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73A H3046, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73A H3046 part is unused and in its original packaging.

Return procedure for BUZ73A H3046:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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