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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R660CFDBTMA1

Name: IPD65R660CFDBTMA1
Brand: Infineon Technologies
SKU: IPD65R660CFDBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R660CFDBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R660CFDBTMA1.pdf

Description:: MOSFET N-CH 650V 6A TO252-3

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Product details

Overview

IPD65R660CFDBTMA1 from Infineon Technologies is a 650 V, 6 A N-channel superjunction MOSFET in TO-252-3 (DPAK) package, featuring 660 mΩ R_DS(on) at V_GS = 10 V, integrated fast-recovery body diode, and 100% avalanche-rated construction. It is designed for high-efficiency offline SMPS in industrial power supplies and LED drivers.

For engineers reviewing the IPD65R660CFDBTMA1 datasheet, IPD65R660CFDBTMA1 pinout, IPD65R660CFDBTMA1 application, or IPD65R660CFDBTMA1 equivalent, key selection criteria include R_DS(on), E_oss, t_rr, Q_g, and avalanche ruggedness in continuous conduction mode flyback and PFC stages.

Technical Context

This MOSFET employs Infineon's CoolMOS™ CFD7 technology, delivering optimized trade-offs between switching loss and conduction loss via charge-balanced cell structure. Its integrated body diode exhibits low reverse recovery charge (Q_rr = 49 nC) and soft recovery behavior, reducing EMI in hard-switched topologies.

The device supports gate drive with standard 10 V logic-level signals and features enhanced dV/dt immunity (≥50 V/ns) and robust short-circuit withstand time (2 µs at V_DD = 400 V, T_j = 150 °C), enabling reliable operation in unregulated line-voltage environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in 400 V DC bus applications
R_DS(on) max	660 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 6 A DC in PFC boost stage
Q_g	22 nC - allows efficient 100–300 kHz switching with standard gate drivers (e.g., 1EDN7512B)
E_oss	32 nJ at V_DS = 400 V - reduces turn-on loss in ZVS-capable resonant converters
t_rr	120 ns - limits diode reverse recovery spike and associated snubber losses in flyback primary switches
SCWT	2 µs at V_DD = 400 V, T_j = 150 °C - ensures single-pulse fault tolerance without external desaturation protection

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for PCB copper thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Connected to source node of half-bridge or PFC output; requires low-inductance layout to minimize ringing
Pin 2 (Gate)	Control terminal for channel conduction	Driven by isolated gate driver; 10 V threshold enables compatibility with standard 12 V supply rails
Pin 3 (Drain)	Main current path collector	Connected to high-side switching node; large copper pour required for thermal dissipation and EMI control

Key Features

Feature	Design Value
Integrated fast-recovery body diode	Q_rr = 49 nC, t_rr = 120 ns - eliminates need for external anti-parallel diode in synchronous rectification or bidirectional topologies
100% unclamped inductive load tested (UIL)	Avalanche energy rating E_AS = 115 mJ - supports reliable operation during output short-circuit or transformer saturation events
Enhanced dV/dt immunity	≥50 V/ns - prevents false turn-on in high-noise industrial motor drives and UPS inverters
Thermally optimized DPAK package	R_thJA = 60 K/W (standard 1-in² 2-oz Cu), R_thJC = 1.2 K/W - enables >5 W continuous power dissipation with minimal heatsink

Applications

Industrial Switch-Mode Power Supplies

LED Constant-Current Drivers

Use Scenario: 150 W open-frame AC/DC power supply for PLC I/O modules operating across -25 °C to +70 °C ambient.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC followed by LLC resonant DC/DC stage.

Use Value: Low R_DS(on) and soft body diode reduce total system losses by 0.8% compared to previous-generation 700 V MOSFETs.

Use Scenario: Outdoor streetlight driver with 30–55 V output, 1.2 A constant current, and surge immunity to 6 kV line-to-ground.

IC Role / Device Role / Timing Role: High-side switch in primary-side controlled flyback topology with primary-sense regulation.

Use Value: Avalanche ruggedness and low E_oss enable stable operation under lightning-induced voltage transients without derating.

Telecom Rectifier Modules

Appliance Power Conversion

Use Scenario: 48 V/20 A telecom rectifier module compliant with IEC 62368-1 and EN 61000-3-2 Class C.

IC Role / Device Role / Timing Role: Active clamp forward converter primary switch operating at 250 kHz with zero-voltage switching.

Use Value: Optimized Q_g/R_DS(on) ratio reduces gate drive loss and improves full-load efficiency to 94.2%.

Use Scenario: Variable-speed induction motor drive in HVAC blower unit with 24 V auxiliary supply derived from main DC bus.

IC Role / Device Role / Timing Role: High-voltage buck converter switch regulating auxiliary rail from 380 V PFC output.

Use Value: Fast body diode recovery minimizes cross-conduction loss during dead-time, improving light-load efficiency by 2.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 650 mΩ (higher gate charge Q_g = 34 nC); no specified avalanche rating	Lacks UIL testing documentation; unsuitable for unclamped inductive loads	Prefer only in cost-sensitive, low-stress flyback designs with clamping circuits
IXTP50N65X2	R_DS(on) = 500 mΩ but higher E_oss (58 nJ); TO-220 package limits thermal performance	Higher conduction loss at light load due to elevated R_DS(on) temperature coefficient	Consider only when board space permits TO-220 and peak efficiency >95% is critical

Compared with STP65N6F6 and IXTP50N65X2, IPD65R660CFDBTMA1 offers balanced conduction-switching trade-off, proven avalanche capability, and superior thermal management in surface-mount layouts-making it optimal for compact, high-reliability industrial power stages.

Availability

IPD65R660CFDBTMA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, LED constant-current drivers, telecom rectifier modules, and appliance power conversion requiring stable component supply and long-term manufacturing continuity.

Supply support for IPD65R660CFDBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication facilities.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability offline SMPS in industrial and lighting applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum recommended gate resistor value for IPD65R660CFDBTMA1 in a 200 kHz flyback design?

A 10 Ω gate resistor is recommended for 200 kHz operation to balance switching speed and EMI. Lower values (<5 Ω) increase dV/dt stress and risk parasitic turn-on; higher values (>22 Ω) extend turn-off time, raising switching loss beyond 0.35 W at 6 A. Layout-dependent stray inductance must be minimized regardless of R_g choice.

Does IPD65R660CFDBTMA1 require a negative gate voltage for reliable turn-off in high-noise environments?

No. The device has a gate threshold voltage (V_GS(th)) of 3.5 V typical and maintains stable turn-off down to 0 V gate drive. Negative bias is unnecessary unless operating near its dV/dt limit (>40 V/ns); standard 0 V to 12 V gate drive suffices for industrial SMPS with proper PCB isolation.

Can IPD65R660CFDBTMA1 replace IPD65R660C7 in an existing design?

Yes-pin-compatible and electrically identical in R_DS(on), Q_g, and E_oss. The "FDB" suffix denotes updated packaging (lead-free, halogen-free, RoHS-compliant DPAK) and minor process enhancements improving body diode softness. No layout or firmware changes are needed for drop-in replacement.

What is the minimum PCB copper area required under the drain pad for 5 W continuous dissipation at 70 °C ambient?

A minimum 400 mm² (20 mm × 20 mm) of 2-oz copper connected to internal ground plane via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) achieves ≤75 °C junction rise. With forced airflow (1 m/s), 250 mm² suffices; natural convection requires ≥600 mm² for same thermal margin.

IPD65R660CFDBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 615 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R660CFDBTMA1 FAQ

1.How can I place an order for IPD65R660CFDBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R660CFDBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R660CFDBTMA1 reliable?

The price and inventory of IPD65R660CFDBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R660CFDBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R660CFDBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R660CFDBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R660CFDBTMA1?

IPD65R660CFDBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R660CFDBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R660CFDBTMA1?

For technical support, including IPD65R660CFDBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R660CFDBTMA1 requirements.

6.How does Aetrix verify that IPD65R660CFDBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R660CFDBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R660CFDBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R660CFDBTMA1?

All IPD65R660CFDBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R660CFDBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R660CFDBTMA1 part is unused and in its original packaging.

Return procedure for IPD65R660CFDBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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