FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ73LHXKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
4,472 | 0.00 |
|
Datasheet |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPA65R110CFDXKSA1MOSFET N-CH 650V 31.2A TO220 Infineon Technologies |
6,689 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220 Infineon Technologies |
2,029 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R190CFDXKSA1MOSFET N-CH 650V 17.5A TO220 Infineon Technologies |
4,081 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO220 Infineon Technologies |
4,316 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO220 Infineon Technologies |
7,340 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R600C6XKSA1MOSFET N-CH 650V 7.3A TO220 Infineon Technologies |
5,753 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPA65R660CFDXKSA1MOSFET N-CH 650V 6A TO220 Infineon Technologies |
4,745 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
|
IPI110N20N3GAKSA1MOSFET N-CH 200V 88A TO262-3 Infineon Technologies |
4,466 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI320N20N3GAKSA1MOSFET N-CH 200V 34A TO262-3 Infineon Technologies |
6,097 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
