Infineon Technologies IPA65R190C6XKSA1

Overview

IPA65R190C6XKSA1 from Infineon Technologies is a 650 V, 20.2 A (TC = 25 °C) superjunction N-channel power MOSFET in TO-220 FullPAK package, featuring RDS(on) = 0.19 Ω (max), Qg = 73 nC, and Eoss = 5.9 µJ at 400 V. It delivers ultra-low conduction and switching losses for high-efficiency PFC and hard-switching SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the IPA65R190C6XKSA1 datasheet, IPA65R190C6XKSA1 pinout, IPA65R190C6XKSA1 application, or IPA65R190C6XKSA1 equivalent, key selection criteria include its 0.83 °C/W RthJC (non-FullPAK reference), 500 A/µs body diode di/dt capability, 700 V VDS rating at Tj,max, and gate plateau voltage of 5.5 V - all critical for rugged, high-frequency switching designs.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure enabling simultaneous reduction of RDS(on) and gate charge. Its optimized cell layout achieves low FOM (RDS(on) × Qg = 13.87 Ω·nC) and low Eoss (5.9 µJ @ 400 V), supporting ZVS/ZCS operation in resonant topologies.

The MOSFET integrates a fast, soft-recovery body diode (trr = 410 ns, Qrr = 6.1 µC, Irrm = 28 A) with 15 V/ns reverse dv/dt ruggedness and 500 A/µs commutation rate - enabling reliable operation in bidirectional and synchronous rectification stages without external snubbers.

Key Specifications

Pinout & Package

IPA65R190C6XKSA1 is housed in a TO-220 FullPAK package - a surface-mount variant of TO-220 with integrated leadframe and drain-connected tab for enhanced thermal performance and automated assembly compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R190C6 and IPP65R190C6, IPA65R190C6 offers SMT-ready TO-220 FullPAK packaging with integrated thermal pad - delivering a balance of automated manufacturability, moderate thermal performance (3.7 °C/W), and identical electrical specs for mid-power industrial designs.

Availability

IPA65R190C6XKSA1 is available at Aetrix Electronics and suitable for server power supply units, telecom rectifiers, LCD/LED TV adapters, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPA65R190C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-frequency AC-DC conversion - targeting PFC, resonant, and hard-switched SMPS in datacenter, telecom, and consumer power applications.

FAQ

What is the maximum continuous drain current for IPA65R190C6XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 12.8 A at TC = 100 °C, as specified in Table 2 of the Final Data Sheet Rev. 2.0. This derating reflects thermal limits of the TO-220 FullPAK package (RthJC = 3.7 °C/W) and ensures safe operation within Tj ≤ 150 °C under sustained load.

Does IPA65R190C6XKSA1 require a gate resistor for stability in hard-switching applications?

Yes - a gate resistor (typically 5–15 Ω) is recommended to dampen ringing caused by parasitic inductance and the device's 8.5 Ω intrinsic gate resistance. The datasheet notes that ferrite beads or separate totem-pole drivers are advised when paralleling multiple units to prevent oscillation and unequal current sharing.

Can IPA65R190C6XKSA1 be used in synchronous rectification configurations?

No - it is not designed for synchronous rectification. Its body diode has soft recovery (trr = 410 ns) and high di/dt capability, but lacks the low VSD (<0.5 V) and optimized reverse conduction characteristics of dedicated SR MOSFETs. Use only as a controlled switch in primary-side or high-side positions.

Is IPA65R190C6XKSA1 compliant with RoHS and REACH regulations?

Yes - it is Pb-free and halogen-free per J-STD-020 and JESD22 standards, and fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "XKSA1" suffix denotes Infineon's standard green packaging and material declaration compliance.