Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPA65R190CFDXKSA1

Part No.:
IPA65R190CFDXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA65R190CFDXKSA1.pdf
Description:
MOSFET N-CH 650V 17.5A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,081

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPA65R190CFDXKSA1 from Infineon Technologies is a 650 V, 17.5 A (TC = 25°C) superjunction N-channel power MOSFET in TO-220 FullPAK package, featuring RDS(on) = 0.19 Ω (max), Qg = 68 nC (typ), and ultra-fast body diode with trr = 120 ns - engineered for high-efficiency resonant switching in server SMPS and telecom AC-DC converters.

For engineers reviewing the IPA65R190CFDXKSA1 datasheet, IPA65R190CFDXKSA1 pinout, IPA65R190CFDXKSA1 application, or IPA65R190CFDXKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), low Eoss (5.7 µJ @ 400 V), thermal resistance (RthJC = 3.7 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its optimized gate charge profile (Qgs = 12 nC, Qgd = 37 nC) supports clean hard-switching and ZVS/ZCS operation in LLC and phase-shifted full-bridge topologies.

The integrated ultra-fast body diode delivers trr = 120 ns and Qrr = 0.5 µC at 100 A/µs di/dt, eliminating need for external anti-parallel SiC Schottky diodes in high-frequency PFC and resonant DC-DC stages while maintaining avalanche robustness (EAS = 484 mJ).

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - supports 400 V AC input designs with ≥20% margin against line surges in telecom/server PSUs
RDS(on), max0.19 Ω - enables <1.5 W conduction loss at 11 A RMS in 100 kHz LLC primary switches
Qg, typ68 nC - allows gate drive with standard 2 A peak drivers (e.g., 1EDN7512B) without excessive power dissipation
Eoss @ 400 V5.7 µJ - reduces turn-on switching loss by >40% vs. legacy SJ MOSFETs in soft-switched topologies
trr120 ns - ensures reliable zero-current switching in PFC boost stages up to 300 kHz
RthJC3.7 °C/W - permits 34 W continuous power dissipation in TO-220 FP with minimal heatsink in compact 1U server supplies

Pinout & Package

IPA65R190CFDXKSA1 uses TO-220 FullPAK (PG-TO220FP) package: isolated drain tab, plastic body with internal copper clip for low-inductance source connection, and screw-mount compatible footprint. Thermal pad on drain side requires direct PCB copper pour for optimal heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalLow-impedance gate input (RG = 1 Ω); requires 10 V min drive for full enhancement; sensitive to ESD (HBM 2 kV)
Pin 2 (Drain)High-voltage power terminalInternally connected to exposed metal tab; must be electrically isolated from heatsink via insulating pad or ceramic washer
Pin 3 (Source)Power return & reference nodeLow-inductance Kelvin source connection via internal copper clip; critical for stable gate control in high-di/dt switching

Key Features

FeatureDesign Value
Ultra-fast body diodetrr = 120 ns, Qrr = 0.5 µC - eliminates reverse recovery oscillation and snubber losses in bridge-leg commutation
High commutation ruggednessdi/dt = 900 A/µs - sustains hard commutation events in LLC resonant converters without failure
Low figure-of-meritRDS(on) × Qg = 12.9 Ω·nC - balances switching speed and conduction loss for 100–300 kHz operation
Industrial qualificationJEDEC J-STD-020 (MSL 1), JESD22-A108 (150°C temp cycle) - ensures reliability in 10-year server deployments

Applications

Server SMPS Primary SwitchTelecom Rectifier Module

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for 1U rack-mounted servers.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–300 kHz with ZVS turn-on and controlled body diode commutation.

Use Value: Enables >96% efficiency at full load by minimizing Eoss and trr-related losses, reducing heatsink size by 35% vs. previous-generation SJ MOSFETs.

Use Scenario: Main switch in 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectification control switch handling 48 V output stage with fast transient response.

Use Value: Delivers 95.2% peak efficiency and meets EN 62368-1 creepage requirements due to 650 V rating and reinforced isolation design.

LCD TV Power SupplyIndustrial Lighting Driver

Use Scenario: PFC boost switch in 250 W open-frame power supply for large-screen LCD TVs.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch requiring low Qg and robust body diode for valley switching.

Use Value: Achieves THD <5% at 230 V AC input and passes IEC 61000-3-2 Class C with no additional filtering.

Use Scenario: Half-bridge switch in 400 W constant-current LED driver for high-bay industrial lighting.

IC Role / Device Role / Timing Role: High-frequency (150 kHz) switching element managing 30 A pulsed current with tight thermal constraints.

Use Value: Maintains junction temperature <115°C under 40°C ambient using only 2-layer PCB copper area, eliminating need for external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW65R190CFDTO-247 package, RthJC = 0.83 °C/W, Ptot = 151 W - higher thermal performance but larger footprintSuitable for high-power (>2 kW) industrial UPS where heatsink space is availableSelect when thermal budget demands >100 W continuous dissipation and board layout accommodates TO-247
IPP65R190CFDTO-220 (non-FullPAK), RthJC = 0.83 °C/W, same RDS(on)/Qg - lower thermal resistance than FullPAK but no Kelvin sourceBetter for cost-sensitive consumer power adapters where source inductance is less criticalChoose for non-resonant flyback or QR PFC where body diode speed is secondary to cost and thermal density

Compared with IPW65R190CFD and IPP65R190CFD, IPA65R190CFDXKSA1 trades absolute thermal performance for superior high-frequency switching stability via Kelvin source and optimized package inductance - making it optimal for compact, high-density resonant converters where layout parasitics dominate.

Availability

IPA65R190CFDXKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, LCD TV power supplies, and industrial LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPA65R190CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ CFD2 product line targets high-efficiency, high-reliability switched-mode power supplies in datacenter, telecom, and industrial equipment - emphasizing rugged body diode behavior and low-loss operation in resonant topologies.

FAQ

What is the maximum continuous drain current for IPA65R190CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 11.0 A at TC = 100°C, as specified in Table 2 of the Rev. 2.7 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (3.7 °C/W) and safe operating area limits under sustained conduction conditions.

Does IPA65R190CFDXKSA1 require a negative gate voltage for reliable turn-off?

No - the device is fully enhanced at VGS = 0 V and has a gate threshold voltage range of 3.5–4.5 V. A gate drive of –5 V is not required; however, applying –2 V to –5 V improves noise immunity in high-di/dt environments and prevents accidental turn-on during fast transients.

Can IPA65R190CFDXKSA1 replace standard silicon MOSFETs in existing 600 V designs without layout changes?

Yes - it uses standard TO-220 FP footprint and pinout (G-D-S), but requires verification of gate drive strength (≥2 A peak) and PCB copper pour for the drain tab. Its lower Qg and faster switching may necessitate minor snubber tuning to manage increased dv/dt (50 V/ns rated).

Is IPA65R190CFDXKSA1 qualified for automotive applications?

No - it is qualified for industrial grade per JEDEC J-STD-020 and JESD22, but lacks AEC-Q101 qualification. For automotive use, Infineon's CoolMOS™ CFD7 or CE series (e.g., IPA65R190CE) are recommended alternatives with extended temperature range and automotive-specific stress testing.

IPA65R190CFDXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1850 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
34W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-111

IPA65R190CFDXKSA1 FAQ

1.How can I place an order for IPA65R190CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R190CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R190CFDXKSA1 reliable?

The price and inventory of IPA65R190CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R190CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R190CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R190CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R190CFDXKSA1?

IPA65R190CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R190CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R190CFDXKSA1?

For technical support, including IPA65R190CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R190CFDXKSA1 requirements.

6.How does Aetrix verify that IPA65R190CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R190CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R190CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R190CFDXKSA1?

All IPA65R190CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R190CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R190CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPA65R190CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA65R190CFDXKSA1 Tags

  • IPA65R190CFDXKSA1
  • IPA65R190CFDXKSA1 PDF
  • IPA65R190CFDXKSA1 Datasheet
  • IPA65R190CFDXKSA1 Specifications
  • IPA65R190CFDXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPA65R190CFDXKSA1
  • Buy IPA65R190CFDXKSA1
  • IPA65R190CFDXKSA1 Price
  • IPA65R190CFDXKSA1 Distributor
  • IPA65R190CFDXKSA1 Supplier
  • IPA65R190CFDXKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER