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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R660CFDXKSA1

Name: IPA65R660CFDXKSA1
Brand: Infineon Technologies
SKU: IPA65R660CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R660CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R660CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 6A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,745

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Product details

Overview

IPA65R660CFDXKSA1 from Infineon Technologies is a 650 V, 6 A, 660 mΩ N-channel superjunction MOSFET in TO-220 package, optimized for high-efficiency SMPS, PFC stages, and offline adapters. It features 100% avalanche-rated ruggedness, low gate charge (Qg = 18 nC), and enhanced body diode softness for reduced EMI in hard-switched topologies.

For engineers reviewing the IPA65R660CFDXKSA1 datasheet, IPA65R660CFDXKSA1 pinout, IPA65R660CFDXKSA1 application, or IPA65R660CFDXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V V_GS, E_AS rating, gate threshold voltage (V_GS(th) = 3.0–4.5 V), and thermal resistance (R_thJC = 1.2 K/W).

Technical Context

This device belongs to Infineon's CoolMOS™ CFD family, employing charge compensation technology to achieve superior conduction-loss vs. switching-loss trade-off. Its optimized cell structure delivers low Q_g/Q_oss ratio and reduced capacitive nonlinearity (C_iss, C_oss, C_rss) across operating voltage range.

The MOSFET supports 650 V blocking capability with guaranteed 100% unclamped inductive switching (UIS) stress testing up to E_AS = 75 mJ at T_j = 25 °C. Gate oxide reliability is validated per JEDEC JESD22-A108, with V_GS rating of ±20 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated drain-source breakdown voltage for universal AC input (85–265 VAC) offline converters
R_DS(on) max	660 mΩ @ V_GS = 10 V, I_D = 3 A - Enables <1.5 W conduction loss at 3 A continuous current
Q_g	18 nC - Reduces gate drive power and enables use with low-power controllers (e.g., ICE2QRxx)
E_AS	75 mJ @ T_j = 25 °C - Supports robust operation under transient overloads without external snubbers
R_thJC	1.2 K/W - Allows 6 A continuous current with ≤50 °C case temperature rise using standard TO-220 heatsink
V_GS(th)	3.0–4.5 V - Ensures reliable turn-on with industry-standard 5 V or 12 V gate drivers

Pinout & Package

TO-220 package with isolated tab (full creepage/clearance design); thermally and electrically isolated drain connection via metal tab. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring <18 nC charge for full enhancement; compatible with standard PWM ICs
Pin 2 (Drain / Tab)	High-voltage power terminal	Electrically isolated metal tab rated for 650 V working voltage; requires insulating washer in heatsink mounting
Pin 3 (Source)	Reference and return path	Common node for gate driver return and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
Enhanced body diode softness (Q_rr/t_rr)	Reduces voltage overshoot and EMI in flyback/LLC freewheeling, enabling lower-cost EMI filters
100% UIS tested	Guarantees single-pulse avalanche energy handling up to 75 mJ without parameter shift or failure
Optimized for ZVS/ZCS topologies	Low C_oss (trapezoidal) and flat C_rss vs. V_DS improve resonant transition efficiency in LLC converters
JEDEC qualified (AEC-Q101 not applicable)	Validated for industrial-grade reliability: HTRB, H3TRB, TC, UHAST per JESD22 standards

Applications

Server SMPS

Industrial UPS

Use Scenario: Primary-side switch in 1–3 kW server power supplies with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 VDC bus with 100–300 kHz switching frequency.

Use Value: 660 mΩ R_DS(on) and 18 nC Q_g enable >95% efficiency at full load while maintaining thermal margin on standard TO-220 heatsinks.

Use Scenario: DC-DC isolation stage in 5–10 kVA online UPS systems with bidirectional energy flow requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch operating in hard-switched and resonant modes.

Use Value: Robust body diode softness and 75 mJ E_AS prevent failure during grid fault transients and battery discharge surges.

LED Street Lighting

EV Charger Auxiliary Supply

Use Scenario: Primary switch in constant-current LED drivers with universal AC input and DALI dimming interface.

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback converter operating at variable frequency up to 120 kHz.

Use Value: Low Q_g/Q_oss ratio minimizes switching losses across wide load range, supporting >90% average efficiency over 10–100% dimming.

Use Scenario: Auxiliary DC-DC converter powering control logic, gate drivers, and communication modules in 7–22 kW AC EV chargers.

IC Role / Device Role / Timing Role: Isolated flyback switch operating from 400 VDC bus with reinforced insulation requirements.

Use Value: TO-220 isolation rating and 1.2 K/W R_thJC ensure stable operation at 60 °C ambient without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 650 mΩ, Q_g = 22 nC, E_AS = 62 mJ - higher gate charge and lower avalanche rating	Limited to lower-stress PFC designs without frequent line surges	Prefer IPA65R660CFDXKSA1 where EMI reduction and surge resilience are critical
IPP65R60CFD7	R_DS(on) = 600 mΩ, Q_g = 16.5 nC, same CFD7 generation - tighter R_DS(on) tolerance and improved C_oss linearity	Better suited for high-frequency (>250 kHz) resonant converters with strict zero-voltage switching margins	Select IPP65R60CFD7 only when board space allows TO-220FP or thermal budget permits lower R_DS(on) benefit

Compared with STP65N6F6, IPA65R660CFDXKSA1 offers superior avalanche ruggedness and lower EMI due to softer body diode; versus IPP65R60CFD7, it trades 60 mΩ lower R_DS(on) for broader legacy compatibility and identical TO-220 footprint.

Availability

IPA65R660CFDXKSA1 is available at Aetrix Electronics and suitable for server SMPS, industrial UPS, LED street lighting, and EV charger auxiliary supply requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA65R660CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD series, designed specifically for high-efficiency, high-reliability offline power conversion in industrial and commercial AC-DC applications.

FAQ

What is the maximum continuous drain current (I_D) for IPA65R660CFDXKSA1 at T_c = 25 °C?

The datasheet specifies I_D = 6 A at T_c = 25 °C with R_DS(on) measured at 10 V V_GS. Derating applies above 25 °C: at T_c = 100 °C, maximum continuous I_D drops to 3.2 A due to thermal limits and R_DS(on) increase. PCB copper area and heatsink interface resistance directly impact achievable current.

Does IPA65R660CFDXKSA1 support gate driving with 5 V logic-level controllers?

Yes - its V_GS(th) range is 3.0–4.5 V, and R_DS(on) remains below 1.1 Ω at V_GS = 5 V (tested per datasheet Fig. 5). However, full 660 mΩ spec requires V_GS ≥ 10 V; for optimal efficiency, 12 V gate drive is recommended in high-current applications.

Is the TO-220 tab of IPA65R660CFDXKSA1 electrically isolated from the source pin?

Yes - the metal tab is internally connected to the drain and fully electrically isolated from the source (Pin 3). The device uses Infineon's "full-pack" isolation construction, providing 2500 V_RMS isolation between tab and leads per UL 60747-17, verified by Hi-Pot test during production.

How does the body diode recovery performance compare to standard silicon MOSFETs?

IPA65R660CFDXKSA1 exhibits significantly softer reverse recovery: Q_rr = 120 nC and t_rr = 110 ns at I_F = 3 A, with low peak reverse recovery current (I_RRM) and minimal voltage overshoot. This reduces EMI and eliminates need for external snubbers in flyback and PFC boost diodes.

IPA65R660CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 615 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 27.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-111

IPA65R660CFDXKSA1 FAQ

1.How can I place an order for IPA65R660CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R660CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R660CFDXKSA1 reliable?

The price and inventory of IPA65R660CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R660CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R660CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R660CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R660CFDXKSA1?

IPA65R660CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R660CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R660CFDXKSA1?

For technical support, including IPA65R660CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R660CFDXKSA1 requirements.

6.How does Aetrix verify that IPA65R660CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R660CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R660CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R660CFDXKSA1?

All IPA65R660CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R660CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R660CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPA65R660CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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