Infineon Technologies IPA65R420CFDXKSA1

Overview

IPA65R420CFDXKSA1 from Infineon Technologies is a 650 V, 0.42 Ω R_DS(on), TO-220 FullPAK N-channel superjunction MOSFET in the CoolMOS™ CFD2 family. It delivers ultra-fast body diode recovery (t_rr = 90 ns, Q_rr = 0.3 µC), high commutation ruggedness (di/dt = 900 A/µs), and low gate charge (Q_g = 31.5 nC), enabling high-efficiency resonant LLC and ZVS-PWM power supplies for server PSUs and telecom rectifiers.

For engineers reviewing the IPA65R420CFDXKSA1 datasheet, IPA65R420CFDXKSA1 pinout, IPA65R420CFDXKSA1 application, or IPA65R420CFDXKSA1 equivalent, key selection criteria include its 650 V V_DSS, 8.7 A I_D continuous rating at T_C = 25°C, 4.0 °C/W R_thJC thermal resistance, robust avalanche energy (E_AS = 227 mJ), and TO-220 FullPAK package with isolated drain tab.

Technical Context

This CoolMOS™ CFD2 device uses superjunction cell architecture to achieve low R_DS(on) × Q_g figure-of-merit (0.42 Ω × 31.5 nC) and low E_oss (2.8 µJ @ 400 V), directly reducing switching losses in hard- and soft-switching topologies. Its optimized body diode exhibits controlled reverse recovery with low Q_rr and minimal voltage overshoot under high di/dt conditions.

The TO-220 FullPAK package integrates an electrically isolated drain tab and internal source bonding to minimize parasitic inductance and improve thermal transfer. Gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support standard 10–12 V gate drivers without level-shifting.

Key Specifications

Pinout & Package

IPA65R420CFDXKSA1 uses the TO-220 FullPAK (PG-TO220FP) package with electrically isolated drain tab, optimized for surface-mount compatibility and enhanced thermal performance over standard TO-220. The package features a molded plastic body with copper leadframe and tin-plated leads (Pb-free, halogen-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R420CFD and IPP65R420CFD, IPA65R420CFDXKSA1 trades some thermal headroom (4.0 vs. 1.5 °C/W) for surface-mount compatibility, isolated drain integration, and reduced assembly steps-ideal for high-volume, space-constrained server and telecom modules.

Availability

IPA65R420CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA65R420CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage MOSFETs and GaN/SiC devices.

This part belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current for IPA65R420CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, derated from 8.7 A at 25°C per the datasheet's thermal limit curve. This value reflects safe operation under sustained thermal load with adequate heatsinking and accounts for R_DS(on) increase at elevated junction temperatures.

Does IPA65R420CFDXKSA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +12 V gate drive; gate threshold voltage is 3.5–4.5 V and gate plateau occurs at 6.4 V. A negative turn-off voltage is not required, though –2 V may be used to improve noise immunity in high-dv/dt environments.

Can IPA65R420CFDXKSA1 replace standard 600 V MOSFETs in existing PFC designs?

Yes, with design validation. Its 650 V V_DSS, lower Q_g, and faster body diode enable higher efficiency and reduced thermal stress in boost PFC stages, but gate drive timing and snubber values must be re-optimized due to lower C_oss and different Q_rr behavior.

Is the drain tab of IPA65R420CFDXKSA1 electrically isolated from the PCB mounting surface?

Yes. The TO-220 FullPAK package features a fully insulated drain tab that maintains dielectric strength ≥2.5 kV RMS between drain and heatsink/PCB, eliminating need for insulating pads or shoulder washers in most industrial and telecom applications.