Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R110CFDXKSA1

Name: IPA65R110CFDXKSA1
Brand: Infineon Technologies
SKU: IPA65R110CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPA65R110CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R110CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 31.2A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,689

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPA65R110CFDXKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, optimized for resonant and soft-switching topologies. It features R_DS(on) = 0.11 Ω (max), Q_g = 118 nC (typ), E_oss = 9.2 µJ @ 400 V, and an ultra-fast, rugged body diode with t_rr = 150 ns and di/dt capability of 900 A/µs - deployed in high-efficiency server PSU LLC half-bridges.

For engineers reviewing the IPA65R110CFDXKSA1 datasheet, IPA65R110CFDXKSA1 pinout, IPA65R110CFDXKSA1 application, or IPA65R110CFDXKSA1 equivalent, key selection criteria include body diode commutation ruggedness, low E_oss/Q_g figure-of-merit, TO-220 FullPAK thermal performance, and industrial-grade JEDEC qualification for telecom and solar inverters.

Technical Context

This device implements Infineon's second-generation CoolMOS™ superjunction architecture with charge compensation trenches, enabling simultaneous reduction of conduction and switching losses. Its optimized gate charge profile (Q_gs = 21 nC, Q_gd = 64 nC) supports precise timing control in ZVS/ZCS circuits.

The integrated body diode is engineered for hard commutation: reverse recovery charge Q_rr = 0.8 µC, peak I_rrm = 8.3 A, and dv/dt ruggedness up to 50 V/ns under asymmetric switching conditions - critical for bidirectional LLC and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, solar MPPT stages)
R_DS(on)	0.11 Ω (max) @ T_J = 25°C - enables <1.2 W conduction loss at 31.2 A, reducing heatsink requirements in compact PSUs
Q_g	118 nC (typ) - determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers
E_oss	9.2 µJ @ 400 V - directly reduces turn-on energy loss in resonant converters, improving efficiency above 100 kHz
t_rr	150 ns - ensures clean zero-current switching transitions without voltage overshoot in LLC tank circuits
di/dt rating	900 A/µs - supports reliable operation during fast current reversal in synchronous rectification and bidirectional converters
P_D (T_C = 25°C)	34.7 W - junction-to-case thermal resistance R_thJC = 3.6 °C/W enables direct mounting on PCB copper without external heatsink in low-power servers

Pinout & Package

IPA65R110CFDXKSA1 is housed in a TO-220 FullPAK (PG-TO220FP) package with isolated drain tab, optimized for surface-mount assembly and enhanced thermal transfer via PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOSFET gate requiring <20 V drive; internal gate resistor R_G = 1.3 Ω limits ringing
Pin 2 (Drain)	High-voltage power output	Exposed drain tab electrically connected to pin 2; must be soldered to large copper pour for thermal and EMI performance
Pin 3 (Source)	Power return / reference node	Low-inductance source connection critical for gate loop integrity; ties to local ground plane in half-bridge layout

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 150 ns, Q_rr = 0.8 µC - eliminates need for external SiC Schottky catch diodes in LLC resonant converters
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 845 mJ - withstands repeated hard-switching events in PFC boost and motor drive freewheeling
Low-loss FOM	R_DS(on) × Q_g = 13.0 Ω·nC - balances conduction and switching loss for optimal efficiency at 200–500 kHz operation
Industrial qualification	JEDEC J-STD-020 (MSL 1), JESD22-A108 - supports reflow-compatible manufacturing and 150°C continuous operation in harsh environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters for data center PSUs.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology, operating at 200–300 kHz with ZVS turn-on.

Use Value: Low E_oss and fast body diode reduce dead-time losses and improve light-load efficiency by >1.2% versus prior-gen SJ-MOSFETs.

Use Scenario: Main switch in 48 V telecom rectifier front-end with active clamp forward or phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Primary-side power transistor handling 3.5 kV isolation barrier and 100 kHz PWM with tight duty-cycle control.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during fast bus transients; qualified for -40°C to +85°C ambient operation.

Solar Microinverter

LED Driver

Use Scenario: DC-AC H-bridge switch in single-phase 300–500 W microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: Bidirectional switching device supporting both power flow directions in transformerless topologies.

Use Value: Robust body diode enables efficient reactive power handling and anti-islanding protection without added diodes.

Use Scenario: Primary-side switch in high-PF, constant-current LED drivers for commercial lighting (e.g., streetlights, high-bay).

IC Role / Device Role / Timing Role: High-voltage buck-boost or flyback controller switch operating at 65–130 kHz with wide dimming range.

Use Value: Low R_DS(on) minimizes thermal rise in enclosed fixtures; Pb-free/halogen-free construction meets RoHS/REACH compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD	Same die, TO-247 package; R_thJC = 0.45 °C/W vs. 3.6 °C/W; P_D = 277.8 W	Requires bolt-down heatsink; suited for >5 kW industrial SMPS where thermal mass dominates	Select when higher power density and forced-air cooling are available; avoid in space-constrained SMT designs
IPP65R110CFD	Same die, TO-220 (non-FullPAK); R_thJC = 0.45 °C/W; drain tab not isolated	Needs insulating washer for heatsink mounting; lower creepage vs. FullPAK variant	Choose for cost-sensitive, through-hole assembled telecom PSUs where isolation and SMT compatibility are secondary

Compared with IPW65R110CFD and IPP65R110CFD, IPA65R110CFDXKSA1 trades absolute power dissipation for PCB-integrated thermal management - delivering 34.7 W capability with no mechanical heatsink, making it optimal for compact, automated SMT production of sub-2 kW power systems.

Availability

IPA65R110CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar microinverters, and high-efficiency LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPA65R110CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CFD2 product line was developed to deliver superior soft-switching performance in resonant topologies - targeting efficiency-critical, high-frequency AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPA65R110CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 19.7 A at T_C = 100°C, derated from 31.2 A at 25°C per the thermal limit defined by R_thJC = 3.6 °C/W and maximum junction temperature of 150°C. This value assumes proper PCB copper area (≥6 cm²) and still-air conditions.

Does IPA65R110CFDXKSA1 require a negative gate voltage for reliable turn-off?

No. The device specifies gate-source voltage limits of ±20 V (static) and ±30 V (AC), with a typical threshold voltage V_GS(th) of 4.0 V. A 0 V gate drive fully turns off the MOSFET; applying negative voltage is unnecessary and not recommended per the datasheet.

Can IPA65R110CFDXKSA1 replace standard silicon MOSFETs in existing PFC boost designs?

Yes - but gate drive strength and layout must be reviewed. Its 118 nC Q_g demands ≥1.5 A peak gate current; parasitic inductance in the gate loop must be minimized to avoid oscillation. Also verify snubber design, as lower E_oss changes turn-on stress profiles.

Is the TO-220 FullPAK package lead-free and RoHS compliant?

Yes. IPA65R110CFDXKSA1 uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL Class 1 reflow requirements - verified in the Rev. 2.6 datasheet, Section 1.1 and Appendix A.

IPA65R110CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-111

IPA65R110CFDXKSA1 FAQ

1.How can I place an order for IPA65R110CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R110CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R110CFDXKSA1 reliable?

The price and inventory of IPA65R110CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R110CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R110CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R110CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R110CFDXKSA1?

IPA65R110CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R110CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R110CFDXKSA1?

For technical support, including IPA65R110CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R110CFDXKSA1 requirements.

6.How does Aetrix verify that IPA65R110CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R110CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R110CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R110CFDXKSA1?

All IPA65R110CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R110CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R110CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPA65R110CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…