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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH5220TRPBFMOSFET N-CH 200V 3.8A/20A PQFN Infineon Technologies |
8,395 | 0.00 |
|
Datasheet |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30 nC @ 10 V | ±20V | 1380 pF @ 50 V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRL6342PBFMOSFET N-CH 30V 9.9A 8SO Infineon Technologies |
9,346 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.9A (Ta) | 2.5V, 4.5V | 14.6mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11 nC @ 4.5 V | ±12V | 1025 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF3610SPBFMOSFET N-CH 100V 103A D2PAK Infineon Technologies |
4,154 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
BSF030NE2LQXUMA1MOSFET N-CH 25V 24A/75A 2WDSON Infineon Technologies |
2,372 | 0.00 |
|
Datasheet |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 75A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 23 nC @ 10 V | ±20V | 1700 pF @ 12 V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
|
IPB042N10N3GE8187ATMA1MOSFET N-CH 100V 100A D2PAK Infineon Technologies |
8,825 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB180N03S4LH0ATMA1MOSFET N-CH 30V 180A TO263-7 Infineon Technologies |
3,008 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 200µA | 300 nC @ 10 V | ±16V | 23000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
|
IPB45N04S4L08ATMA1MOSFET N-CH 40V 45A TO263-3-2 Infineon Technologies |
2,568 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 4.5V, 10V | 7.6mOhm @ 45A, 10V | 2.2V @ 17µA | 30 nC @ 10 V | +20V, -16V | 2340 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPB65R660CFDATMA1MOSFET N-CH 650V 6A D2PAK Infineon Technologies |
9,814 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPD100N06S403ATMA1MOSFET N-CH 60V 100A TO252-3-11 Infineon Technologies |
7,368 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IPD50N06S4L12ATMA1MOSFET N-CH 60V 50A TO252-3-11 Infineon Technologies |
5,397 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 2.2V @ 20µA | 40 nC @ 10 V | ±16V | 2890 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
