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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N03S4LH0ATMA1

Name: IPB180N03S4LH0ATMA1
Brand: Infineon Technologies
SKU: IPB180N03S4LH0ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N03S4LH0ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N03S4LH0ATMA1.pdf

Description:: MOSFET N-CH 30V 180A TO263-7

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Inventory:3,008

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Product details

Overview

IPB180N03S4LH0ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-7-3 package, rated for 30 V V_DS, 180 A continuous drain current at T_C = 100 °C, and ultra-low 0.73 mΩ R_DS(on) @ V_GS = 10 V. It delivers high-current switching in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB180N03S4LH0ATMA1 datasheet, IPB180N03S4LH0ATMA1 pinout, IPB180N03S4LH0ATMA1 application, or IPB180N03S4LH0ATMA1 equivalent, key selection criteria include its 0.6 K/W R_thJC, 100% avalanche-tested ruggedness, 175 °C operating temperature, and integrated source-drain diode with 250 ns t_rr.

Technical Context

This device uses Infineon's trench-based OptiMOS™-T2 process to achieve low conduction loss and fast switching. Its gate threshold voltage (1.0–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining noise immunity.

Thermal design leverages a dedicated drain-exposed die pad in the PG-TO263-7-3 package, enabling 0.6 K/W junction-to-case resistance when mounted on ≥6 cm² copper area. Dynamic parameters-including 230–300 nC total gate charge and 17.5–35 nC Q_gd-support high-efficiency synchronous rectification and PWM motor drives up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V automotive systems
R_DS(on) @ 10 V	0.73 mΩ max - Enables <1 W conduction loss at 180 A in high-current battery switches
I_D cont. @ 100 °C	180 A - Sustains full load in EV on-board chargers and 48 V mild-hybrid inverters
E_AS	980 mJ - Confirmed single-pulse avalanche energy supports inductive load switching without snubbers
t_r/t_f	7 ns / 25 ns - Fast edge rates reduce switching losses in high-frequency DC-DC stages
Q_g	230–300 nC - Gate drive power optimized for standard 1–2 A gate drivers in automotive ECUs
V_SD	0.9–1.3 V @ 100 A - Low forward drop improves efficiency in freewheeling paths

Pinout & Package

PG-TO263-7-3 (D2PAK-7) package with exposed drain pad for thermal and electrical connection. Pin 1–3: Source; Pin 4: Gate; Pin 5–7: Drain (internally paralleled).

Pin/Terminal	Circuit Role	Design Meaning
1–3 (S1–S3)	Source terminals	Three parallel source leads reduce bondwire inductance and improve current sharing in high-di/dt applications
4 (G)	Gate terminal	Single low-inductance gate input compatible with standard isolated gate drivers
5–7 (D1–D3)	Drain terminals	Three paralleled drain connections tied to exposed copper pad for optimal thermal path and low loop inductance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 90 A, ensuring field reliability under inductive fault conditions
MSL1 reflow rating	Withstands peak solder reflow up to 260 °C without delamination or parameter shift
175 °C operating temperature	Enables placement near heat sources (e.g., IGBT modules) in engine bay or power electronics enclosures
Green RoHS-compliant package	Halogen-free molding compound and lead-free terminations meet EU Directive 2011/65/EU

Applications

Automotive 48 V Mild-Hybrid Inverter

EV On-Board Charger (OBC) Primary Switch

Use Scenario: High-current half-bridge switching in 48 V–300 V bidirectional DC-DC converters for torque assist and regenerative braking.

IC Role / Device Role / Timing Role: Main high-side and low-side power switch handling 150+ A peak currents at 50–100 kHz PWM frequency.

Use Value: 0.73 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy T1 devices, improving system efficiency from 94% to 96.2% at full load.

Use Scenario: Primary-side switching in two-phase interleaved LLC resonant converters for 6.6 kW OBCs.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd MOSFET enabling ZVS operation with minimal dead-time penalty.

Use Value: 28–56 nC Q_gd and 7 ns t_r allow reliable zero-voltage switching down to 100 kHz, reducing EMI and gate driver stress.

Commercial Vehicle 24 V Starter-Generator Control

Industrial Motor Drive Half-Bridge Module

Use Scenario: High-reliability starter-generator H-bridge in Class 8 trucks, operating continuously at ambient >105 °C.

IC Role / Device Role / Timing Role: Robust power switch with integrated avalanche capability for load dump and cranking surge protection.

Use Value: 980 mJ E_AS and 175 °C T_j rating eliminate need for external clamping circuits during 120 V load-dump transients.

Use Scenario: Compact 15 kW servo drive output stage requiring high current density and thermal stability.

IC Role / Device Role / Timing Role: Low-R_DS(on) discrete switch in TO-263-7 footprint, replacing dual SO-8 packages to reduce PCB area by 40%.

Use Value: 0.6 K/W R_thJC enables 180 A operation with only 6 cm² copper area-cutting heatsink mass by 22% vs. standard D2PAK.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher 1.25 K/W R_thJC; no AEC-Q101 qualification	Suitable for industrial UPS but not automotive due to lack of automotive qualification and lower current rating	Select only for cost-sensitive non-automotive designs where 180 A current and 175 °C operation are not required
STL220N3LLH6	R_DS(on) = 0.85 mΩ @ 10 V; 175 °C rated; AEC-Q101 qualified; smaller PowerFLAT 5x6 package	Limited to 120 A continuous due to thermal constraints in surface-mount package	Prefer for space-constrained PCB layouts where peak current ≤120 A and board-level cooling is limited

Compared with IRFB4115PBF and STL220N3LLH6, IPB180N03S4LH0ATMA1 uniquely combines 180 A current capability, 0.6 K/W thermal resistance, and full AEC-Q101 compliance-making it the only option for high-power automotive inverters requiring both sustained current and extreme temperature resilience.

Availability

IPB180N03S4LH0ATMA1 is available at Aetrix Electronics and suitable for automotive powertrain control, EV on-board charging, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB180N03S4LH0ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-current automotive power conversion-emphasizing low R_DS(on), rugged avalanche performance, and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPB180N03S4LH0ATMA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to +10 V to +12 V for full enhancement and -5 V to -10 V for fast turn-off, avoiding Miller-induced shoot-through in bridge configurations.

Does IPB180N03S4LH0ATMA1 have an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic source-drain body diode with typical V_SD = 0.9 V at 100 A and T_j = 25 °C. Reverse recovery time t_rr is 250 ns under specified conditions (V_R = 20 V, I_F = 100 A, di/dt = 100 A/µs), and Q_rr is 280 nC-critical for minimizing commutation losses in synchronous rectifiers.

Can IPB180N03S4LH0ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive layout, identical PCB trace lengths, and thermal coupling via shared heatsink. Derating to 85% of total rated current per device is recommended for reliability above 150 °C junction temperature.

Is the PG-TO263-7-3 package lead-free and RoHS compliant?

Yes-the package uses lead-free terminations and halogen-free molding compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 classification for lead-free reflow up to 260 °C peak temperature.

IPB180N03S4LH0ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 23000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180N03S4LH0ATMA1 FAQ

1.How can I place an order for IPB180N03S4LH0ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N03S4LH0ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N03S4LH0ATMA1 reliable?

The price and inventory of IPB180N03S4LH0ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N03S4LH0ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N03S4LH0ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N03S4LH0ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N03S4LH0ATMA1?

IPB180N03S4LH0ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N03S4LH0ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N03S4LH0ATMA1?

For technical support, including IPB180N03S4LH0ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N03S4LH0ATMA1 requirements.

6.How does Aetrix verify that IPB180N03S4LH0ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N03S4LH0ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N03S4LH0ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N03S4LH0ATMA1?

All IPB180N03S4LH0ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N03S4LH0ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N03S4LH0ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N03S4LH0ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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