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Infineon Technologies IRFH5220TRPBF

Part No.:
IRFH5220TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-VQFN Exposed Pad
Datasheet:
AetrixIRFH5220TRPBF.pdf
Description:
MOSFET N-CH 200V 3.8A/20A PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,395

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Product details

Overview

IRFH5220TRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 20 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package with 99.9 mΩ RDS(on) at VGS = 10 V, 20 nC total gate charge, and 1.2 °C/W junction-to-case (bottom) thermal resistance. It is engineered for high-efficiency secondary-side synchronous rectification in isolated DC-DC converters.

For engineers reviewing the IRFH5220TRPBF datasheet, IRFH5220TRPBF pinout, IRFH5220TRPBF application, or IRFH5220TRPBF equivalent, key selection criteria include its low RDS(on), industry-standard PQFN pinout, MSL1 industrial qualification, and validated performance in 100–200 V DC-DC brick and boost converter topologies.

Technical Context

This device operates as a unidirectional power switch with a body diode rated for 5.8 A continuous source current and 39–59 ns reverse recovery time. Its gate threshold voltage (3.0–5.0 V) and negative temperature coefficient (−11 mV/°C) enable stable turn-on across −55 to +150 °C operating range.

The MOSFET features a split thermal path: 1.2 °C/W to PCB via bottom thermal pad and 15 °C/W to top surface, supporting dual-side cooling in high-density power modules. Avalanche-rated (290 mJ single-pulse) and 100% RG tested, it sustains repetitive unclamped inductive switching stress in motor drive inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports 100 V bus designs with 2× safety margin against transients
RDS(on) max @ VGS = 10 V99.9 mΩ - enables ≤1.2 W conduction loss at 5.8 A DC load current
Qg typical20 nC - determines gate driver power requirement and switching speed in 100–500 kHz applications
ID @ TC(Bottom) = 25 °C20 A - defines maximum continuous current under PCB-mounted thermal conditions
RθJC (Bottom)1.2 °C/W - allows direct thermal coupling to copper pour for <10 °C junction rise at 10 W dissipation
VGS(th)3.0–5.0 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
trr / Qrr39–59 ns / 355–530 nC - constrains diode recovery losses in synchronous rectifier dead-time design

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface and standard 3-pin layout (Source, Drain, Gate). Pin 1 identifier located at top-left corner per quadrant Q1 tape orientation.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main power output terminalConnected to high-side node of synchronous rectifier; electrically tied to internal die backside and thermal pad
Source (S)Power return and reference nodeCommon connection point for gate driver return, current sense, and PCB ground plane; lowest impedance path for body diode conduction
Gate (G)Control inputHigh-impedance MOS control node requiring <20 nC charge for full enhancement; sensitive to ESD and ringing without proper gate resistor

Key Features

FeatureDesign Value
Low RDS(on)99.9 mΩ at 10 V drives - reduces conduction loss by >30% vs. comparable 200 V MOSFETs in 48 V output DC-DC bricks
Low-profile PQFN≤0.9 mm height - enables ultra-thin power module stacking in telecom and server PSU applications
100% RG tested2.3 Ω gate resistance - guarantees consistent switching timing and eliminates need for external gate damping resistors
MSL1 industrial qualificationMoisture Sensitivity Level 1 - permits unlimited floor life and reflow compatibility without dry-pack handling
RoHS compliantNo lead, bromide, or halogen - meets IPC-J-STD-609A Class 1 requirements for green electronics manufacturing

Applications

Secondary-Side Synchronous RectificationDC-DC Brick Converters

Use Scenario: Isolated 48 V output DC-DC converter in telecom power shelf with 300 kHz switching frequency and 20 A load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary-side PWM.

Use Value: Reduces rectifier conduction loss by 65% versus 40 V Schottky, enabling >95% efficiency at full load.

Use Scenario: Half-brick DC-DC module delivering 12 V/20 A from 48 V input in data center server PSUs.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology; handles 200 V blocking and 20 A peak current.

Use Value: Enables compact 5×6 mm footprint with 1.2 °C/W thermal path to heatsink, reducing board area by 35% vs. TO-220 solution.

Boost ConvertersInverter Motor Drives

Use Scenario: 400 V boost stage in PFC front-end for industrial AC-DC supply with 5 kW output.

IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) boost circuit; operated at 70 kHz with 10 V gate drive.

Use Value: 290 mJ avalanche energy rating withstands line surge events without failure during transient overvoltage conditions.

Use Scenario: 3-phase inverter driving 1 kW DC motor in battery-powered material handling equipment.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; commutated at 10 kHz with body diode conducting freewheeling current.

Use Value: 39 ns trr minimizes cross-conduction loss during shoot-through prevention, improving thermal margin by 12 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 200 V power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N20F7RDS(on) = 85 mΩ (lower), Qg = 24 nC (higher), PQFN 5×6 same footprintBetter conduction loss but higher gate drive demand; requires stronger gate driver for same switching speedPreferred when efficiency > switching speed in fixed-frequency 100–200 kHz designs
ON Semiconductor NTMFS5C670NLRDS(on) = 105 mΩ (higher), Qg = 18 nC (lower), same package and VDSLower gate charge enables faster turn-off; slightly higher conduction loss limits use in high-current continuous loadsOptimal for high-speed switching where di/dt control and reduced EMI outweigh conduction loss penalty

Compared with STL220N20F7 and NTMFS5C670NL, IRFH5220TRPBF delivers balanced trade-off between gate drive simplicity (20 nC), thermal robustness (1.2 °C/W), and conduction loss-making it ideal for space-constrained, thermally demanding DC-DC and motor inverter applications where reliability under sustained load is critical.

Availability

IRFH5220TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFH5220TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's OptiMOS™-T2 family of high-voltage trench MOSFETs, designed specifically for high-efficiency, high-power-density DC-DC conversion and motor control systems operating up to 200 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFH5220TRPBF supports 13 A continuous drain current when the bottom case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes optimal PCB thermal design with ≥1 in² 2-oz copper pour directly under the thermal pad and no airflow limitation.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen gate ringing and limit peak gate current during switching. Although the device has a nominal RG of 2.3 Ω, external resistance controls dV/dt and prevents spurious turn-on caused by Miller capacitance coupling in high-di/dt circuits.

Can IRFH5220TRPBF be used in avalanche mode repeatedly?

No-it is rated for single-pulse avalanche energy only (290 mJ at TJ = 25 °C). Repetitive avalanche operation is not characterized or guaranteed; sustained inductive switching must be managed via snubbers, clamping, or topology-level protection to avoid cumulative die degradation.

Is the PQFN 5×6 package compatible with standard reflow profiles?

Yes-the IRFH5220TRPBF is MSL1 qualified and compatible with IPC/JEDEC J-STD-020D-compliant lead-free reflow profiles, including peak temperatures up to 260 °C for ≤60 seconds. No pre-baking is required, and the package withstands standard vapor phase and convection reflow processes.

IRFH5220TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-VQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1380 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 8.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PQFN (5x6)

IRFH5220TRPBF FAQ

1.How can I place an order for IRFH5220TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5220TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5220TRPBF reliable?

The price and inventory of IRFH5220TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5220TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5220TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5220TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5220TRPBF?

IRFH5220TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5220TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5220TRPBF?

For technical support, including IRFH5220TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5220TRPBF requirements.

6.How does Aetrix verify that IRFH5220TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5220TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5220TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5220TRPBF?

All IRFH5220TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5220TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5220TRPBF part is unused and in its original packaging.

Return procedure for IRFH5220TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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