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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3610SPBF

Name: IRF3610SPBF
Brand: Infineon Technologies
SKU: IRF3610SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3610SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3610SPBF.pdf

Description:: MOSFET N-CH 100V 103A D2PAK

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Product details

Overview

IRF3610SPBF from Infineon Technologies is a 100V, 103A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 9.3mΩ typical R_DS(on), 100nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power supplies.

For engineers reviewing the IRF3610SPBF datasheet, IRF3610SPBF pinout, IRF3610SPBF application, or IRF3610SPBF equivalent, key selection criteria include its 100V V_DSS, 103A continuous drain current at T_C = 25°C, 0.50°C/W junction-to-case thermal resistance, avalanche-rated operation up to 2000mJ, and SOA-limited switching performance in high-frequency DC-DC converters.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve low R_DS(on) while maintaining high dV/dt immunity (>4.5V/ns) and controlled reverse recovery (Q_rr = 570nC at T_J = 25°C). Its body diode exhibits 1.3V forward voltage at 62A and 110ns trr under standardized test conditions.

The device operates with gate threshold voltage of 2.0–4.0V and delivers 110S transconductance at V_GS = 10V, enabling fast turn-on (t_d(on) = 15ns) and controlled turn-off (t_d(off) = 77ns) under 2.7Ω gate drive. Its C_iss = 5380pF and C_oss(eff, TR) = 750pF support stable high-frequency operation up to 500kHz in phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche onset; supports 48V/54V bus systems with 20% margin.
R_DS(on) typ.	9.3mΩ - Conduction loss of ~0.1W at 10A, enabling >96% efficiency in 12V→1V VRMs.
I_D @ T_C = 25°C	103A - Continuous current rating with heatsink; defines minimum PCB copper area (≥1"² FR-4) for thermal management.
Q_g	100nC - Gate drive energy requirement; dictates driver IC selection (e.g., IR2110 with ≥2A peak sink/source).
E_AS	2000mJ - Single-pulse avalanche energy limit; enables reliable operation during output short-circuit events in offline SMPS.
R_θJC	0.50°C/W - Thermal path efficiency from junction to case; requires direct mounting to heatsink for <100°C ΔT at full load.
trr	110ns - Body diode reverse recovery time; constrains maximum switching frequency to avoid cross-conduction losses in synchronous rectifiers.

Pinout & Package

IRF3610SPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in G-D-S order from left to right on the component side.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10V logic-level drive; internal R_G = 2.2Ω limits dv/dt-induced false turn-on.
D (Drain)	High-side power terminal	Connected to PCB heatsink pad; carries full load current and absorbs avalanche energy.
S (Source)	Reference node	Return path for load current; used as gate drive reference; must be low-inductance layout to minimize ringing.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated >4.5V/ns - Prevents parasitic turn-on during fast voltage transients in bridge-leg configurations.
Full avalanche rating	2000mJ single-pulse E_AS - Eliminates need for external snubbers in flyback and LLC resonant converters.
Low C_oss(eff, TR)	750pF - Reduces turn-off switching loss and improves zero-voltage switching (ZVS) margin in soft-switching topologies.
Lead-free and RoHS-compliant	SPbF suffix - Meets IPC-J-STD-020D reflow profile; compatible with standard Pb-free assembly processes.
Thermally rugged SOA	103A @ 100V for 10ms - Supports overload protection without derating in industrial UPS backup circuits.

Applications

Server VRM Synchronous Rectifier

Telecom 48V DC-DC Converter

Use Scenario: High-current point-of-load conversion in dual-processor servers requiring 100A+ at 1.2V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; commutates at 300–500kHz with precise dead-time control.

Use Value: 9.3mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 15mΩ devices, lowering thermal stress on 6-layer PCBs.

Use Scenario: Isolated 48V-to-12V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology operating at 250kHz with 50% duty cycle.

Use Value: 2000mJ E_AS withstands repeated output short-circuits during field deployment without failure.

Uninterruptible Power Supply Inverter

Hard-Switched Industrial Motor Drive

Use Scenario: 1kVA online UPS inverter stage delivering pure sine-wave AC output from 360V DC bus.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 103A peak current; body diode conducts freewheeling current during PWM dead time.

Use Value: 110ns trr and 1.3V V_SD minimize reverse recovery loss and conduction loss simultaneously in 50Hz–1kHz modulation.

Use Scenario: 3-phase IGBT gate driver auxiliary supply in HVAC variable-frequency drives.

IC Role / Device Role / Timing Role: High-side bootstrap switch supplying isolated gate drive for 600V IGBTs; switches at 10–20kHz.

Use Value: 0.50°C/W R_θJC enables direct heatsink mounting without thermal interface material, reducing BOM count and assembly cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 8.5mΩ typ., Q_g = 92nC, but lower E_AS (1200mJ) and no specified dV/dt rating.	Better conduction efficiency but less robust in unclamped inductive loads.	Prefer when thermal budget dominates over fault tolerance.
IXFH110N10L2	R_DS(on) = 9.0mΩ typ., Q_g = 115nC, higher C_iss (6200pF), and rated for 175°C TJ max.	Superior high-temperature operation but slower switching due to higher gate charge.	Prefer in extended ambient temperature environments (>85°C).

Compared with STP110N10F7 and IXFH110N10L2, IRF3610SPBF offers balanced trade-offs: highest avalanche ruggedness (2000mJ), verified dV/dt immunity, and industry-standard D2PAK footprint-making it optimal for mission-critical power stages where reliability under transient stress is non-negotiable.

Availability

IRF3610SPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRF3610SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF3610SPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-power-density, high-reliability switching applications in server, telecom, and industrial power supplies where thermal stability and avalanche survivability are critical.

FAQ

What is the maximum safe operating frequency for IRF3610SPBF in a hard-switched buck converter?

IRF3610SPBF supports hard-switched operation up to 500kHz in well-designed buck converters with optimized gate drive (2.7Ω resistor) and low-inductance layout. Its 100nC Q_g and 750pF C_oss(eff, TR) limit practical frequency to ≤500kHz at 100A load; beyond this, switching losses dominate and thermal derating becomes necessary.

Can IRF3610SPBF replace IRF3205 in an existing 56V UPS design?

Yes-IRF3610SPBF is a direct upgrade: both use D2PAK package and share identical pinout (G-D-S), but IRF3610SPBF offers 100V V_DSS (vs. 55V), 9.3mΩ R_DS(on) (vs. 8.0mΩ), and 2000mJ E_AS (vs. 520mJ). This enables higher bus voltage headroom and superior fault tolerance without board redesign.

Is the body diode of IRF3610SPBF suitable for synchronous rectification without external Schottky assist?

Yes-the body diode is characterized for synchronous rectification with 1.3V V_SD at 62A and 110ns trr at 25°C. Its dI/dt capability (1935A/µs) and dV/dt ruggedness allow direct use in 100–300kHz SR applications; however, external Schottky may still be added for ultra-low-loss 1V-output VRMs.

Does IRF3610SPBF require gate resistors for EMI suppression in a 48V telecom PSU?

Yes-a 2.7Ω gate resistor is recommended per datasheet Figure 23a to dampen ringing and limit peak gate current. This value balances switching speed (t_r = 55ns) and EMI reduction; values >5Ω increase losses unnecessarily, while <1.5Ω risks overshoot and shoot-through in half-bridge configurations.

IRF3610SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 103A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRF3610SPBF FAQ

1.How can I place an order for IRF3610SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3610SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3610SPBF reliable?

The price and inventory of IRF3610SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3610SPBF is usually 5 days.

3.What payment methods are accepted for IRF3610SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3610SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3610SPBF?

IRF3610SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3610SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3610SPBF?

For technical support, including IRF3610SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3610SPBF requirements.

6.How does Aetrix verify that IRF3610SPBF is sourced from the original manufacturer or authorized distributors?

All IRF3610SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3610SPBF meets industry standards.

7.What is the process for return or replacement of IRF3610SPBF?

All IRF3610SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3610SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3610SPBF part is unused and in its original packaging.

Return procedure for IRF3610SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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