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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL6342PBF

Name: IRL6342PBF
Brand: Infineon Technologies
SKU: IRL6342PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL6342PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRL6342PBF.pdf

Description:: MOSFET N-CH 30V 9.9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,346

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Product details

Overview

IRL6342PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 9.9 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for low-voltage DC-DC conversion and synchronous rectification. It delivers R_DS(on) = 12.0 mΩ (typ) at V_GS = 4.5 V, Q_g = 11 nC (typ), and features an integrated body diode with t_rr = 13 ns (typ), enabling high-efficiency switching in compact power supplies.

For engineers reviewing the IRL6342PBF datasheet, IRL6342PBF pinout, IRL6342PBF application, or IRL6342PBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, MSL1 moisture sensitivity rating, RoHS-compliant halogen-free construction, and SO-8 footprint suitability for multi-vendor board designs requiring thermal reliability up to +150 °C junction temperature.

Technical Context

This MOSFET employs planar silicon process technology with optimized channel geometry to achieve low on-resistance while maintaining fast switching performance. Its gate threshold voltage (V_GS(th)) ranges from 0.5 V to 1.1 V, ensuring robust turn-on under low-voltage control signals, and its transconductance (g_fs) of 38 S supports precise current regulation in closed-loop power stages.

The device integrates a monolithic body diode with V_SD = 1.2 V (max) at I_S = 7.9 A and reverse recovery charge Q_rr = 5.2–7.8 nC, making it suitable for freewheeling and synchronous rectifier roles where diode conduction loss and switching loss must be minimized simultaneously.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus applications.
R_DS(on) @ V_GS = 4.5 V	12.0 mΩ (typ), 14.6 mΩ (max) - Directly determines conduction loss in high-current paths like CPU VRMs.
Q_g	11 nC (typ) - Governs gate driver power requirement and switching speed in PWM frequencies up to 1 MHz.
I_D @ T_A = 25°C	9.9 A - Continuous current capability on standard PCB copper; enables single-device use in sub-10 A point-of-load converters.
t_rr	13 ns (typ) - Enables fast body-diode commutation in synchronous buck topologies without excessive shoot-through risk.
R_θJA	50 °C/W (max) - Thermal resistance from junction to ambient on 1-inch² copper; informs heatsinking needs for sustained 7.9 A operation.

Pinout & Package

IRL6342PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal dissipation. Pin 1 is gate (G), pins 2–4 and 6–8 are source (S), and pin 5 is drain (D). The layout supports dual-side routing and automated assembly per EIA-481 tape-and-reel standards.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 0–12 V logic-level signals; requires <2.0 Ω gate resistance for optimal switching.
2,3,4,6,7,8	Source (S)	Power return path; all six pins internally connected; provides low-inductance source connection for high di/dt operation.
5	Drain (D)	Main power output node; tied to exposed copper pad on bottom for thermal transfer to PCB ground plane.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V/5 V microcontroller-driven systems.
Low Q_gd/Q_gs ratio	Q_gd = 4.6 nC, Q_gs2 = 0.60 nC - reduces Miller effect and improves immunity to false turn-on during high dv/dt transitions.
MSL1 qualification	Moisture Sensitivity Level 1 - allows unlimited floor life before reflow, simplifying manufacturing logistics for consumer-grade production.
Halogen-free & RoHS	No Br, Cl, Pb, or other restricted substances - meets IPC-1752A material declaration requirements for global electronics compliance.

Applications

Server Point-of-Load Regulator

USB-C PD Adapter Secondary Side

Use Scenario: High-density 12 V input → 1.0 V/10 A output VRM supplying modern CPUs/GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter; operates at 500 kHz–1 MHz with 4.5 V gate drive from controller IC.

Use Value: 12.0 mΩ R_DS(on) minimizes conduction loss; 11 nC Q_g enables efficient high-frequency switching without excessive gate driver heating.

Use Scenario: 20 V USB-C PD output stage delivering 5–20 V at up to 5 A with tight efficiency targets.

IC Role / Device Role / Timing Role: Low-side synchronous FET in active-clamp forward or buck-boost topology; driven by dedicated PD controller.

Use Value: 13 ns t_rr and 5.2 nC Q_rr reduce body-diode conduction loss during dead-time, improving full-load efficiency by >0.8% vs. standard MOSFETs.

Industrial PLC I/O Module

Automotive Body Control Module

Use Scenario: 24 V DC power distribution with electronic fuse and load switching for sensor/actuator interfaces.

IC Role / Device Role / Timing Role: Load switch with overcurrent protection; controlled via isolated GPIO from MCU.

Use Value: V_GS(th) = 0.5–1.1 V ensures reliable turn-on even with marginal 3.3 V logic levels; SO-8 package supports conformal coating for harsh environments.

Use Scenario: 12 V battery-fed lighting control (LED headlamps, interior lamps) requiring PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: High-side or low-side PWM switch; operated at 100–500 Hz with duty-cycle modulation.

Use Value: R_θJA = 50 °C/W and T_J = −55 to +150 °C rating ensure stable operation under under-hood thermal cycling without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6342TRPBF	Same die in SOT-23 package; R_DS(on) = 14.6 mΩ (max) at V_GS = 4.5 V; lower I_D = 4.3 A.	Used in space-constrained, lower-current (<5 A) portable devices; lacks SO-8 thermal mass.	Select when board area is critical and current demand is ≤4.3 A; verify thermal margin on 2-layer PCB.
SI7157DP-T1-GE3	SO-8, 30 V, R_DS(on) = 11.5 mΩ (max) at V_GS = 4.5 V; Q_g = 13.5 nC; higher gate charge increases driver loss.	Preferred in automotive-qualified designs due to AEC-Q101 certification; not required for industrial/consumer use.	Choose for automotive BOMs needing qualification; otherwise IRL6342PBF offers better Q_g/R_DS(on) trade-off for cost-sensitive applications.

Compared with IRLML6342TRPBF and SI7157DP-T1-GE3, IRL6342PBF delivers superior thermal performance in SO-8 format, balanced gate charge for high-frequency operation, and broader availability across industrial supply chains - making it optimal for mid-power DC-DC and load-switching applications where reliability and manufacturability are prioritized.

Availability

IRL6342PBF is available at Aetrix Electronics and suitable for server point-of-load regulators, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRL6342PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support its legacy HEXFET product lines with full documentation and reliability data.

The IRL6342PBF belongs to the logic-level HEXFET Power MOSFET family, engineered specifically for high-efficiency, low-voltage switching in consumer, computing, and industrial power conversion systems where gate drive simplicity and thermal robustness are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRL6342PBF supports 7.9 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch²). This rating assumes SO-8 mounting on standard FR-4 with 2 oz copper and no external heatsink. Derating follows linear thermal slope of 0.02 W/°C above 70°C ambient.

Does this MOSFET require a gate resistor for stability?

Yes - a series gate resistor of 1–10 Ω is recommended to dampen ringing and prevent parasitic oscillation during switching. The device's gate resistance (R_G) is 2.0 Ω (typ), so external resistance controls slew rate and EMI; values below 1 Ω increase risk of shoot-through in half-bridge configurations.

Can IRL6342PBF replace IRLZ34N in existing designs?

No - although both are logic-level N-channel MOSFETs, IRLZ34N uses TO-220 package (R_DS(on) = 35 mΩ), while IRL6342PBF is SO-8 with 12.0 mΩ R_DS(on). Footprint, thermal path, and current capability differ significantly; direct replacement requires PCB redesign and thermal validation.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - with t_rr = 13 ns (typ) and Q_rr = 5.2 nC (typ), the integrated body diode supports moderate-frequency hard-switched operation (≤500 kHz). For soft-switched or zero-voltage-transition circuits, its fast recovery minimizes associated losses without requiring external Schottky diodes.

IRL6342PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 14.6mOhm @ 9.9A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1025 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRL6342PBF FAQ

1.How can I place an order for IRL6342PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL6342PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL6342PBF reliable?

The price and inventory of IRL6342PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL6342PBF is usually 5 days.

3.What payment methods are accepted for IRL6342PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL6342PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL6342PBF?

IRL6342PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL6342PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL6342PBF?

For technical support, including IRL6342PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL6342PBF requirements.

6.How does Aetrix verify that IRL6342PBF is sourced from the original manufacturer or authorized distributors?

All IRL6342PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL6342PBF meets industry standards.

7.What is the process for return or replacement of IRL6342PBF?

All IRL6342PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL6342PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL6342PBF part is unused and in its original packaging.

Return procedure for IRL6342PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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