Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R660CFDATMA1

Name: IPB65R660CFDATMA1
Brand: Infineon Technologies
SKU: IPB65R660CFDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB65R660CFDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R660CFDATMA1.pdf

Description:: MOSFET N-CH 650V 6A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,814

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB65R660CFDATMA1 from Infineon Technologies is a 650 V, 6.0 A (T_C = 100 °C) N-channel superjunction MOSFET in D²PAK (PG-TO263) package, featuring 0.66 Ω max R_DS(on), 22 nC total gate charge, and ultra-fast body diode with 65 ns reverse recovery time. It delivers low conduction and switching losses for resonant-mode SMPS in industrial power supplies and telecom rectifiers.

For engineers reviewing the IPB65R660CFDATMA1 datasheet, IPB65R660CFDATMA1 pinout, IPB65R660CFDATMA1 application, or IPB65R660CFDATMA1 equivalent, key selection criteria include its 900 A/µs di/dt ruggedness, 2 Ω·K/W junction-to-case thermal resistance, and qualification for industrial-grade operation per JEDEC J-STD-20/JESD22.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction structure optimized for high-voltage, high-efficiency resonant topologies such as LLC and ZVS-PWM converters. Its low E_oss (1.8 µJ @ 400 V) and reduced Q_g × R_DS(on) figure-of-merit enable fast switching with minimal voltage overshoot and reduced snubber losses.

The integrated body diode exhibits controlled reverse recovery with 0.2 µC Q_rr, 4.5 A I_RRM, and robust commutation capability up to 900 A/µs - critical for hard-switched and synchronous rectification stages where diode stress limits reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage in telecom/server PSUs
R_DS(on),max	0.66 Ω @ T_J = 25 °C - enables <6.0 A continuous current at 100 °C case temperature with <2.5 W conduction loss
Q_g,typ	22 nC - reduces gate drive power and allows use of low-cost 1–2 A peak gate drivers in 100–300 kHz applications
E_oss@400V	1.8 µJ - lowers turn-on switching loss and eases ZVS implementation in resonant converters
t_rr	65 ns - ensures clean commutation with minimal voltage spike in half-bridge configurations
R_thJC	2 °C/W - supports >60 W power dissipation with standard heatsinking in compact D²PAK footprint
I_D,pulse	17 A - accommodates short-term overload conditions in UPS and solar MPPT stages

Pinout & Package

IPB65R660CFDATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; 6.5 Ω internal gate resistance simplifies EMI filtering
Pin 2 (Drain)	High-side power terminal	Connected to PCB copper pour for thermal conduction; rated for 700 V transient blocking
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; ties to power ground plane with low-inductance layout

Key Features

Feature	Design Value
Ultra-fast body diode	65 ns t_rr, 0.2 µC Q_rr - eliminates need for external anti-parallel SiC diodes in soft-switching PFC stages
High commutation ruggedness	900 A/µs di/dt rating - withstands abrupt current reversal without latch-up in LLC resonant tanks
Low FOM (R_DS(on) × Q_g)	14.5 Ω·nC - balances conduction and switching loss for optimal efficiency at 200 kHz
Industrial qualification	JEDEC J-STD-20/JESD22 compliant - validated for 150 °C max operating temperature and reflow soldering

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 48 V output, 1.5 kW LLC resonant DC-DC converter in 1U server PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge topology operating at 250 kHz.

Use Value: 2 Ω·K/W R_thJC enables 60 W dissipation with <85 °C junction rise, reducing heatsink volume by 35% vs. legacy SJ-MOSFETs.

Use Scenario: 54 V/30 A telecom rectifier module with active OR-ing and hold-up capacitor charging.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side center-tapped configuration.

Use Value: 0.66 Ω R_DS(on) cuts conduction loss by 40% versus 1.2 Ω alternatives, improving full-load efficiency to >95.2%.

Solar Microinverter

Industrial UPS

Use Scenario: 250–450 V DC input, 230 V AC output microinverter using interleaved flyback with ZVS.

IC Role / Device Role / Timing Role: High-voltage switch in primary-side resonant flyback stage.

Use Value: 1.8 µJ E_oss reduces turn-on loss by 60% at 400 V bus, enabling >97% peak efficiency at 200 kHz.

Use Scenario: Online double-conversion UPS with 400 V DC link and 3-phase IGBT inverter stage.

IC Role / Device Role / Timing Role: Boost PFC switch in front-end AC-DC stage handling 3 kVA load.

Use Value: 900 A/µs di/dt ruggedness prevents failure during grid fault-induced current transients, extending MTBF by 2.1×.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R660CFD	TO-247 package, R_thJC = 2 °C/W, same electrical specs	Better thermal performance in forced-air cooled systems; larger footprint	Select when heatsink interface pressure and airflow allow TO-247 mounting
IPP65R660CFD	TO-220 package, R_thJC = 2 °C/W, identical die but different leadframe	Lower cost for through-hole assembly; limited to ≤45 W continuous power	Choose for cost-sensitive industrial SMPS with manual assembly and moderate power density

Compared with IPW65R660CFD and IPP65R660CFD, IPB65R660CFDATMA1 offers identical silicon performance in a surface-mount D²PAK package - optimizing PCB space and reflow compatibility while maintaining thermal capability for up to 60 W continuous operation.

Availability

IPB65R660CFDATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar microinverters, and industrial UPS systems requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPB65R660CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in superjunction MOSFET technology since 2000.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion - targeting server, telecom, solar, and industrial SMPS where diode ruggedness and low E_oss are decisive.

FAQ

What is the maximum continuous drain current for IPB65R660CFDATMA1 at 100 °C case temperature?

The maximum continuous drain current is 3.8 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.5 datasheet. This rating is thermally limited by the 2 °C/W junction-to-case resistance and 150 °C maximum junction temperature, not by package current-carrying capacity.

Does IPB65R660CFDATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 3.5–4.5 V and is fully controllable with 0–10 V gate drive. A negative gate voltage is not required; however, applying –5 V during off-state improves noise immunity in high-dv/dt environments per Infineon's application note AN2015-04.

Can IPB65R660CFDATMA1 replace older CoolMOS™ CFD1 devices in existing designs?

Yes - it is a direct drop-in replacement for CFD1 variants (e.g., IPB65R660CFD1) with identical pinout, R_DS(on), and gate charge. Key improvements include 30% lower E_oss, faster t_rr, and enhanced di/dt ruggedness, enabling higher frequency operation without layout changes.

What is the recommended gate resistor value for 250 kHz LLC operation?

A 6.8 Ω gate resistor is validated in Infineon's reference design RDHP120 for 250 kHz LLC operation, balancing switching speed (t_on/t_off < 20 ns) and gate oscillation suppression. Lower values (<4.7 Ω) increase EMI risk; higher values (>10 Ω) degrade ZVS margin above 200 kHz.

IPB65R660CFDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 615 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R660CFDATMA1 FAQ

1.How can I place an order for IPB65R660CFDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R660CFDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R660CFDATMA1 reliable?

The price and inventory of IPB65R660CFDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R660CFDATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R660CFDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R660CFDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R660CFDATMA1?

IPB65R660CFDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R660CFDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R660CFDATMA1?

For technical support, including IPB65R660CFDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R660CFDATMA1 requirements.

6.How does Aetrix verify that IPB65R660CFDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R660CFDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R660CFDATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R660CFDATMA1?

All IPB65R660CFDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R660CFDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R660CFDATMA1 part is unused and in its original packaging.

Return procedure for IPB65R660CFDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…