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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB45N04S4L08ATMA1

Name: IPB45N04S4L08ATMA1
Brand: Infineon Technologies
SKU: IPB45N04S4L08ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB45N04S4L08ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB45N04S4L08ATMA1.pdf

Description:: MOSFET N-CH 40V 45A TO263-3-2

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Product details

Overview

IPB45N04S4L08ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 45 A continuous drain current at T_C = 25 °C, and 7.6 mΩ max R_DS(on) at V_GS = 10 V. It features 100% single-pulse avalanche testing, 175 °C maximum junction temperature, and is optimized for automotive DC-DC converters and motor control stages.

For engineers reviewing the IPB45N04S4L08ATMA1 datasheet, IPB45N04S4L08ATMA1 pinout, IPB45N04S4L08ATMA1 application, or IPB45N04S4L08ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy (E_AS = 55 mJ), thermal resistance (R_thJC = 3.3 K/W), and AEC qualification status for under-hood power switching.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, and its 23–30 nC total gate charge supports high-frequency PWM operation up to 200 kHz in synchronous rectification topologies.

The integrated body diode exhibits low forward voltage (V_SD = 0.9–1.3 V at I_F = 45 A) and fast reverse recovery (t_rr = 34 ns, Q_rr = 27 nC), reducing commutation losses in half-bridge and H-bridge configurations used in EPS and HVAC actuators.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) max @ V_GS = 10 V	7.6 mΩ - Enables ≤1.5 W conduction loss at 45 A, critical for thermally constrained modules
I_D continuous @ T_C = 25 °C	45 A - Sustains peak load currents in electric power steering (EPS) motor drivers
E_AS	55 mJ - Withstands inductive kickback without failure in relay replacement or solenoid drive
Q_g total	23–30 nC - Determines gate driver power requirement and switching transition time in 100–200 kHz SMPS
R_thJC	3.3 K/W - Allows direct heatsink mounting with predictable junction-to-case thermal path
t_rr	34 ns - Minimizes cross-conduction risk and dead-time sensitivity in synchronous buck converters

Pinout & Package

IPB45N04S4L08ATMA1 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with isolated drain tab for PCB thermal relief. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives PWM signal; requires <30 nC gate charge for full turn-on at 10 V
Pin 2 (Drain)	High-side current return path	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for thermal management
Pin 3 (Source)	Reference node for gate drive	Connects to low-side switch or ground plane; defines local V_GS reference

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use per stress test requirements including temperature cycling and humidity bias
100% single-pulse avalanche tested	Guarantees ruggedness against inductive switching transients without derating
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Green Product (RoHS compliant)	Meets EU Directive 2011/65/EU with no exemptions required for Pb, Cd, Hg, Cr⁶⁺, PBB, PBDE
Optimized for 4.5 V gate drive	R_DS(on) = 9.2–10.6 mΩ at V_GS = 4.5 V enables direct MCU GPIO control without level-shifting

Applications

Electric Power Steering (EPS)

Automotive HVAC Blower Control

Use Scenario: High-current H-bridge driving 3-phase brushless motor in compact EPS module.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 12 V battery-fed inverter stage.

Use Value: 7.6 mΩ R_DS(on) and 55 mJ E_AS ensure efficient torque delivery and fault tolerance during sudden load reversal.

Use Scenario: PWM-controlled DC fan motor in climate control system with variable speed demand.

IC Role / Device Role / Timing Role: Single-ended switch in buck-derived motor driver with freewheeling diode conduction.

Use Value: Fast t_rr = 34 ns and low Q_rr = 27 nC reduce switching losses and audible noise at 20 kHz PWM frequency.

12 V Automotive DC-DC Converter

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Synchronous rectifier in 12 V output stage of 48 V–12 V bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 100–150 kHz with zero-voltage switching assist.

Use Value: 23–30 nC Q_g enables low gate driver loss; 3.3 K/W R_thJC supports >92% efficiency at 30 A load.

Use Scenario: Primary-side high-side switch in auxiliary 12 V supply derived from OBC's HV DC link.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in flyback or forward converter operating at 65–100 kHz.

Use Value: 175 °C T_j(max) and AEC qualification ensure reliability across full vehicle lifecycle under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP45N04S4L-08	TO-220-3-1 through-hole package; identical electrical specs but higher R_thJA (62 K/W vs 40 K/W on PCB)	Suitable for prototyping or low-volume assemblies where manual soldering is preferred	Select when mechanical mounting constraints prohibit SMD or when legacy board design lacks thermal pad layout
IPI45N04S4L-08	TO-262-3-1 (I²PAK) package; same die, slightly lower R_thJC (3.1 K/W), no isolation between drain tab and mounting surface	Better suited for forced-air cooled industrial motor drives than automotive under-hood environments	Choose when cost-sensitive industrial designs require AEC-equivalent performance without automotive qualification overhead

Compared with IPP45N04S4L-08 and IPI45N04S4L-08, IPB45N04S4L08ATMA1 offers superior thermal performance in SMT layouts due to its isolated D²PAK drain tab and optimized PCB copper coupling, making it the preferred choice for space-constrained, high-reliability automotive modules requiring MSL1 reflow compatibility.

Availability

IPB45N04S4L08ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and HVAC blower control requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB45N04S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V/24 V automotive power stages where low R_DS(on), rugged avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

Is IPB45N04S4L08ATMA1 pin-compatible with IPP45N04S4L-08?

No - IPB45N04S4L08ATMA1 uses PG-TO263-3-2 (D²PAK) packaging with isolated drain tab, while IPP45N04S4L-08 uses PG-TO220-3-1 with non-isolated through-hole leads. Mechanical footprint, thermal interface, and soldering process differ fundamentally; PCB redesign is required for substitution.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz PWM with 30 nC Q_g, a 10 Ω gate resistor limits dV/dt to ~3 V/ns and keeps switching transitions within 30–50 ns. Higher values increase switching loss; lower values risk ringing. Use 5–15 Ω with active gate clamp if driving from 3.3 V MCU outputs.

Does this MOSFET require external gate protection diodes?

No - the device has built-in gate oxide protection and specified ±16 V gate-source voltage rating. However, a 12 V Zener (e.g., BZX84-C12) between gate and source is recommended in noisy automotive environments to clamp transient overvoltage beyond V_GS = +20 V.

Can IPB45N04S4L08ATMA1 replace older OptiMOS®-T1 devices in existing designs?

Yes - it shares identical V_DS, I_D, and R_DS(on) specs but improves Q_g by ~15% and reduces t_rr by 25% versus T1 generation. Verify gate drive strength and thermal margin, as faster switching may increase EMI; layout parasitics become more critical.

IPB45N04S4L08ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 17µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB45N04S4L08ATMA1 FAQ

1.How can I place an order for IPB45N04S4L08ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB45N04S4L08ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB45N04S4L08ATMA1 reliable?

The price and inventory of IPB45N04S4L08ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB45N04S4L08ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB45N04S4L08ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB45N04S4L08ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB45N04S4L08ATMA1?

IPB45N04S4L08ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB45N04S4L08ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB45N04S4L08ATMA1?

For technical support, including IPB45N04S4L08ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB45N04S4L08ATMA1 requirements.

6.How does Aetrix verify that IPB45N04S4L08ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB45N04S4L08ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB45N04S4L08ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB45N04S4L08ATMA1?

All IPB45N04S4L08ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB45N04S4L08ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB45N04S4L08ATMA1 part is unused and in its original packaging.

Return procedure for IPB45N04S4L08ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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