Infineon Technologies IPD100N06S403ATMA1

Overview

IPD100N06S403ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 3.5 mΩ R_DS(on) max at 100 A and 10 V V_GS, with 175 °C maximum junction temperature and 100% avalanche tested. It serves as a high-current synchronous rectifier or main switch in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPD100N06S403ATMA1 datasheet, IPD100N06S403ATMA1 pinout, IPD100N06S403ATMA1 application, or IPD100N06S403ATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 100 A continuous drain current capability at T_C = 100 °C, integrated body diode with 1.3 V V_SD max, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This device employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 99–128 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The integrated Schottky-like body diode delivers 100 A continuous forward current and 125 ns reverse recovery time under defined conditions (V_R = 30 V, I_F = 50 A, di_F/dt = 100 A/µs), enabling reliable freewheeling in half-bridge topologies without external diodes.

Key Specifications

Pinout & Package

Package: PG-TO252-3-11 (DPAK variant with exposed drain pad, standard 3-pin surface-mount configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB100N06S403ATMA1 and IRF100N06S4PBF, the IPD100N06S403ATMA1 uniquely balances AEC-Q101 compliance, ultra-low R_DS(on), and DPAK manufacturability-making it optimal for space-constrained automotive modules where qualification and thermal performance are both mandatory.

Availability

IPD100N06S403ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V DC-DC converters, and electric power steering motor inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD100N06S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-reliability automotive power switching applications demanding AEC-Q101 qualification and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPD100N06S403ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to 10–15 V during normal switching, with transient overshoots held below 18 V using appropriate gate resistor and clamping design.

Does IPD100N06S403ATMA1 require a gate driver IC for automotive applications?

Yes - due to its 99–128 nC total gate charge and need for fast, controlled turn-on/turn-off in high-frequency PWM (e.g., >50 kHz), a dedicated gate driver IC with ≥2 A peak source/sink capability is recommended. Microcontroller GPIO alone cannot reliably charge/discharge the gate within required timing constraints without excessive switching loss or shoot-through risk.

How is the drain terminal connected internally in the PG-TO252-3-11 package?

In the PG-TO252-3-11 package, the drain is electrically connected to the large exposed copper pad on the bottom side of the package. This pad must be soldered to a thermally optimized PCB copper area (minimum 6 cm² per datasheet) to achieve the specified 1.0 K/W R_thJC and sustain 100 A continuous current without exceeding T_j = 175 °C.

Can IPD100N06S403ATMA1 replace older OptiMOS™-T1 devices in existing designs?

Yes - it is a direct die upgrade with identical pinout, improved R_DS(on) (3.5 mΩ vs. 4.2 mΩ for T1), and enhanced avalanche ruggedness. No layout changes are needed, but gate drive strength may be increased slightly to exploit faster switching; thermal design remains valid if original T1 design met R_thJC targets.