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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI320N20N3GAKSA1

Name: IPI320N20N3GAKSA1
Brand: Infineon Technologies
SKU: IPI320N20N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI320N20N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI320N20N3GAKSA1.pdf

Description:: MOSFET N-CH 200V 34A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI320N20N3GAKSA1 from Infineon Technologies is a 200 V, 34 A N-channel enhancement-mode power MOSFET in PG-TO220-3 package, featuring 32 mΩ max R_DS(on) at V_GS = 10 V, 175 °C junction rating, and optimized FOM (gate charge × R_DS(on)) for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPI320N20N3GAKSA1 datasheet, IPI320N20N3GAKSA1 pinout, IPI320N20N3GAKSA1 application, or IPI320N20N3GAKSA1 equivalent, key selection criteria include its 1.1 K/W R_thJC, 136 A pulsed drain current, 190 mJ single-pulse avalanche energy, and 110 ns reverse recovery time in the integrated body diode - all critical for hard-switched SMPS and motor drive half-bridges.

Technical Context

This MOSFET employs trench-based OptiMOSTM3 silicon technology to achieve low conduction loss and fast switching dynamics. Its gate threshold voltage (2–4 V) enables robust TTL/CMOS-level drive compatibility, while the 22–29 nC total gate charge supports efficient operation at 100–500 kHz switching frequencies.

The device integrates a fast-recovery body diode with 500 nC Q_rr and 110 ns t_rr, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is supported by a validated 1.1 K/W junction-to-case resistance under standard mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15% margin for voltage transients in industrial power supplies.
R_DS(on), max	32 mΩ @ V_GS = 10 V - delivers ≤1.1 W conduction loss at 34 A continuous drain current.
I_D, cont	34 A @ T_C = 25 °C - rated for high-current output stages in 300–500 W isolated DC-DC modules.
E_AS	190 mJ - withstands repetitive inductive switching stress in motor gate drivers and flyback snubbers.
t_r/t_f	9 ns / 4 ns - enables clean edge transitions with minimal switching loss at ≥300 kHz operation.
Q_g	22–29 nC - determines gate driver current requirement (~1.5 A peak for 20 ns turn-on with 15 Ω gate resistor).
V_SD	0.9–1.2 V @ I_F = 34 A - defines forward drop and self-heating in freewheeling paths during PWM dead-time.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free RoHS-compliant plating). Pin assignment verified per Infineon outline drawing Rev. 2.3 (2011-05-20).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, thermally coupled to heatsink	Electrically and thermally connected to metal tab - must be insulated from chassis unless system ground reference permits.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for source-shunt sensing or bootstrap capacitor reference in high-side configurations.
Gate	Control terminal for channel modulation	High-impedance input requiring <2.5 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max).

Key Features

Feature	Design Value
N-channel normal-level logic	Operates fully enhanced with 10 V gate drive - compatible with standard 12 V gate drivers and eliminates need for level shifters.
Optimized FOM (Q_g × R_DS(on))	~0.9 nC·Ω - balances switching and conduction losses for highest efficiency in 100–300 kHz DC-DC topologies.
175 °C maximum junction temperature	Enables derated operation in sealed enclosures or high-ambient environments (e.g., industrial PLC power stages).
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for automotive and industrial applications - ensures long-term parametric stability under thermal cycling.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - required for export to EU, Japan, and Korea markets.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, multiphase buck converter supplying core voltage to Xeon-class CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 300–500 kHz with precise dead-time control.

Use Value: 32 mΩ R_DS(on) reduces conduction loss by >25% vs. legacy 45 mΩ parts, directly improving VRM efficiency at 30–60 A load.

Use Scenario: 48 V to 12 V isolated forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to minimize forward drop and thermal stress.

Use Value: Integrated 0.9–1.2 V V_SD and 110 ns t_rr enable >95% secondary efficiency at full load without external diode or snubber.

Motor Drive Half-Bridge

UPS Inverter Stage

Use Scenario: 200 V DC bus inverter driving 3-phase BLDC motor in HVAC compressor.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, operating with 10 µs dead time and 20 kHz PWM.

Use Value: 190 mJ E_AS sustains safe operation during short-circuit events and inductive kickback without desaturation protection circuitry.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC from 200 V battery bank.

IC Role / Device Role / Timing Role: High-efficiency switching element in H-bridge inverter stage, handling bidirectional current during battery charging/discharging.

Use Value: 175 °C T_j,max and 1.1 K/W R_thJC allow sustained 34 A operation in compact heatsink designs with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP34NF20	R_DS(on) = 40 mΩ (max), Q_g = 32 nC, TO-220 package	Higher conduction and switching loss; lower avalanche ruggedness (E_AS = 120 mJ)	Acceptable where cost sensitivity outweighs efficiency targets and thermal margin is ample.
IRF640NPBF	V_DS = 200 V, R_DS(on) = 180 mΩ, Q_g = 44 nC, legacy planar process	Significantly higher R_DS(on) and slower switching - unsuitable for >100 kHz or high-current sync rectification	Only viable for low-frequency linear or quasi-resonant applications with relaxed thermal constraints.

Compared with STP34NF20 and IRF640NPBF, IPI320N20N3GAKSA1 delivers superior FOM, tighter R_DS(on) tolerance, and higher avalanche energy - making it the preferred choice for space-constrained, high-efficiency 200 V power stages where thermal headroom and reliability are critical.

Availability

IPI320N20N3GAKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, motor drive half-bridges, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPI320N20N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOSTM3 family - engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial SMPS, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IPI320N20N3GAKSA1 pin-compatible with IPB320N20N3G or IPP320N20N3G?

Yes - all three share identical PG-TO220-3 pinout (Drain-Tab, Source, Gate), same marking "320N20N", and identical electrical specifications. The only difference is packaging variant: IPB = TO263-3 (D²PAK), IPP = TO262-3 (I²PAK), IPI = TO220-3. Mechanical mounting and PCB footprint differ.

What is the recommended gate resistor value for 300 kHz operation?

A 10–15 Ω non-inductive gate resistor is recommended to balance switching speed and ringing suppression. With 22–29 nC Q_g, this yields ~20–30 ns turn-on delay and dV/dt < 5 V/ns - sufficient for EMI compliance in Class B conducted emissions testing.

Does the body diode support continuous reverse recovery at 20 kHz?

Yes - the 110 ns t_rr and 500 nC Q_rr are characterized at 100 A/µs diF/dt and 100 V reverse bias. At 20 kHz, thermal rise from diode recovery remains within limits when operated below 34 A average forward current and with adequate heatsinking.

Can IPI320N20N3GAKSA1 be used in avalanche mode for ZVS soft-switching?

Yes - its 190 mJ single-pulse E_AS rating and JEDEC qualification for target applications confirm controlled, repeatable avalanche capability. However, repetitive avalanche requires strict pulse-width and duty-cycle limits per Figure 3 in the datasheet to avoid cumulative thermal stress.

IPI320N20N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI320N20N3GAKSA1 FAQ

1.How can I place an order for IPI320N20N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI320N20N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI320N20N3GAKSA1 reliable?

The price and inventory of IPI320N20N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI320N20N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI320N20N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI320N20N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI320N20N3GAKSA1?

IPI320N20N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI320N20N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI320N20N3GAKSA1?

For technical support, including IPI320N20N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI320N20N3GAKSA1 requirements.

6.How does Aetrix verify that IPI320N20N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI320N20N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI320N20N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI320N20N3GAKSA1?

All IPI320N20N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI320N20N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI320N20N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI320N20N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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