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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB012NE2LX

Name: BSB012NE2LX
Brand: Infineon Technologies
SKU: BSB012NE2LX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB012NE2LX

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB012NE2LX.pdf

Description:: MOSFET N-CH 25V 37A/170A 2WDSON

Quantity:: RFQ Add To RFQ list

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Inventory:4,230

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Product details

Overview

BSB012NE2LX from Infineon Technologies is a 25 V, 170 A n-channel power MOSFET in MG-WDSON-2 package, optimized as a control FET in high-frequency synchronous buck converters for server VRMs. It delivers R_DS(on) = 1.2 mΩ at V_GS = 10 V, Q_g = 32 nC, and Q_oss = 35 nC, enabling ultra-low conduction and switching losses in point-of-load applications.

For engineers reviewing the BSB012NE2LX datasheet, BSB012NE2LX pinout, BSB012NE2LX application, or BSB012NE2LX equivalent, this device is selected for high-current, low-voltage DC-DC conversion where thermal performance, gate drive efficiency, and double-sided cooling capability are critical design constraints.

Technical Context

The BSB012NE2LX employs an optimized trench-based OptiMOS™25V process to achieve ultra-low R_DS(on) and gate charge trade-offs. Its dynamic parameters-C_iss = 4900 pF, C_oss = 1700 pF, C_rss = 190 pF-support fast, low-loss switching with minimal voltage overshoot in hard-switched topologies.

Designed for synchronous rectification in multiphase VRMs, it features 100% avalanche tested ruggedness (E_AS = 240 mJ), JEDEC-qualified reliability (J-STD-20/JESD22), and a thermally enhanced MG-WDSON-2 package with bottom-side thermal pad and <0.7 mm profile for double-sided cooling integration.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus and 1–3.3 V output rails in server VRMs
R_DS(on), max	1.2 mΩ @ V_GS = 10 V - Enables ≤2.1 W conduction loss at 100 A, critical for high-current phase legs
I_D, cont.	170 A @ T_C = 25 °C - Supports multi-phase current sharing up to 680 A total with four phases
Q_g, typ	32 nC @ V_GS = 0–10 V - Reduces gate driver power demand and enables >1 MHz switching without excessive drive loss
R_thJC	1.0 K/W (bottom) - Allows direct thermal coupling to heatsink or PCB copper, enabling <40 °C junction rise at 100 W dissipation
Q_oss	35 nC @ V_DD = 12 V - Minimizes turn-off energy loss during zero-voltage switching transitions in advanced VRM topologies
V_GS(th)	1.2–2.0 V - Ensures robust turn-on margin with standard 3.3 V or 5 V gate drivers while suppressing shoot-through risk

Pinout & Package

MG-WDSON-2 is a leadless, double-sided cooling package with exposed drain paddle on bottom and source/gate terminals on top surface. The package supports solder reflow mounting and direct thermal interface to both PCB and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Paddle)	Main current path and thermal interface	Electrically and thermally connected to PCB copper pour; requires full-solder coverage for R_thJC = 1.0 K/W
Source (Top)	Reference node for gate drive and current sensing	Low-inductance connection to source loop; critical for minimizing dV/dt-induced false turn-on
Gate (Top)	Control terminal for channel modulation	Requires low-impedance gate resistor (RG ≈ 1.6 Ω typical) to balance switching speed and EMI

Key Features

Feature	Design Value
Optimized for high-performance buck converter	Low Q_g/R_DS(on) ratio (26.7 nC/mΩ) enables efficient operation at >1 MHz with minimal dead-time loss
Double-sided cooling	Thermal resistance split: R_thJC = 1.0 K/W (bottom), R_thJC = 2.2 K/W (top) - supports stacked heatsink + PCB copper cooling
100% R_g tested	Guarantees gate resistance ≤0.55 Ω - ensures consistent switching timing across production lots
Low-profile (<0.7 mm)	Enables placement under VRM inductors or in tight vertical space constraints of 1U server boards
Compatible with DirectFET® MX footprint	Drop-in replacement for legacy DirectFET® designs without PCB redesign or layout change

Applications

Server Voltage Regulator Modules

Synchronous Buck Converters

Use Scenario: Multiphase 12 V-to-1.2 V conversion for CPU/GPU VRMs in dual-socket servers.

IC Role / Device Role: High-side control FET in interleaved buck stages operating at 500 kHz–1 MHz.

Use Value: 1.2 mΩ R_DS(on) and 32 nC Q_g reduce total power loss by ≥18% vs. prior-gen 25 V MOSFETs at 100 A per phase.

Use Scenario: Point-of-load regulation for ASIC/FPGA core supplies in telecom baseband units.

IC Role / Device Role: Primary switching element in compact, high-density 30 A–60 A single-phase buck regulators.

Use Value: MG-WDSON-2's 0.7 mm height allows integration beneath shielded inductors, reducing board area by 22%.

High-Power Density POL Converters

Synchronous Rectification

Use Scenario: 48 V-to-12 V intermediate bus conversion in edge AI accelerators with strict thermal limits.

IC Role / Device Role: Low-side switch in active-clamp forward or LLC secondary-side synchronous rectifier.

Use Value: 57 A continuous diode current rating and 0.8 V V_SD enable efficient reverse conduction during dead time without external Schottky.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V input DC-DC modules for datacom PSUs.

IC Role / Device Role: Low-V_DS freewheeling switch replacing discrete Schottky diodes in center-tapped transformer outputs.

Use Value: Q_rr = 20 nC and soft-recovery behavior suppress EMI spikes and reduce snubber losses by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.4 mΩ, Q_g = 34 nC, same MG-WDSON-2 package	Higher gate charge increases driver loss at >800 kHz; slightly higher R_DS(on) raises conduction loss by ~16%	Acceptable for lower-frequency VRMs (<600 kHz); not recommended for 1 MHz+ AI accelerator POLs
DMTH10H025LPSQ-13	R_DS(on) = 1.1 mΩ, Q_g = 41 nC, PowerPAK® 1212-8 package	Higher Q_g degrades switching efficiency; different footprint requires PCB redesign	Preferred only when absolute lowest R_DS(on) dominates over gate drive loss and layout compatibility

Compared with IRF6642TRPBF and DMTH10H025LPSQ-13, BSB012NE2LX offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and drop-in DirectFET® MX compatibility-making it uniquely suited for high-frequency, high-current server VRMs where thermal density and layout reuse are mandatory.

Availability

BSB012NE2LX is available at Aetrix Electronics and suitable for server voltage regulator modules, high-power density point-of-load converters, and synchronous rectification circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSB012NE2LX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency, high-power-density DC-DC conversion in computing infrastructure, delivering trench-MOSFET performance optimized for VRM control and sync-FET roles in next-generation servers and datacom systems.

FAQ

What is the maximum continuous drain current for BSB012NE2LX at 100 °C case temperature?

The maximum continuous drain current is 107 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the final datasheet. This derating reflects thermal limits of the MG-WDSON-2 package under realistic board-level cooling conditions with 6 cm² copper area.

Does BSB012NE2LX support gate drive from 3.3 V logic?

Yes-its V_GS(th) range of 1.2–2.0 V ensures reliable turn-on with 3.3 V gate drivers, though R_DS(on) increases to 1.6 mΩ at V_GS = 4.5 V (Table 4). For minimum conduction loss, 10 V drive is recommended.

Is the MG-WDSON-2 package compatible with standard reflow profiles?

Yes-the package is qualified per J-STD-020 and supports standard lead-free reflow profiles (peak 260 °C, 20–40 sec). Its Pb-free plating and halogen-free construction comply with RoHS and IEC61249-2-21 requirements.

What is the significance of "100% avalanche tested" for this MOSFET?

Each unit undergoes single-pulse avalanche stress testing to 40 A and 240 mJ (Table 2), verifying ruggedness against inductive switching transients and load dump events in VRM phase legs-critical for field reliability in unattended server deployments.

BSB012NE2LX Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 57W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB012NE2LX FAQ

1.How can I place an order for BSB012NE2LX through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB012NE2LX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB012NE2LX reliable?

The price and inventory of BSB012NE2LX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB012NE2LX is usually 5 days.

3.What payment methods are accepted for BSB012NE2LX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB012NE2LX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB012NE2LX?

BSB012NE2LX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB012NE2LX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB012NE2LX?

For technical support, including BSB012NE2LX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB012NE2LX requirements.

6.How does Aetrix verify that BSB012NE2LX is sourced from the original manufacturer or authorized distributors?

All BSB012NE2LX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB012NE2LX meets industry standards.

7.What is the process for return or replacement of BSB012NE2LX?

All BSB012NE2LX units undergo pre-shipment inspection (PSI). If there is an issue with BSB012NE2LX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB012NE2LX part is unused and in its original packaging.

Return procedure for BSB012NE2LX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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