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Infineon Technologies BUZ31L H
- Part No.:
- BUZ31L H
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ31L H.pdf
- Description:
- MOSFET N-CH 200V 13.5A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,954
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Product details
Overview
BUZ31L H from Infineon Technologies is an N-channel logic-level SIPMOS power MOSFET rated for 200 V drain-source voltage, 13.5 A continuous drain current at TC = 28 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 7 A. It features avalanche-rated ruggedness, integrated body diode with 1.2–1.6 V forward voltage, and PG-TO220-3 package for high-power switching in DC-DC converters and motor control.
For engineers reviewing the BUZ31L H datasheet, BUZ31L H pinout, BUZ31L H application, or BUZ31L H equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), avalanche energy rating (EAS = 200 mJ), thermal resistance (RthJC ≤ 1.32 K/W), and halogen-free compliance per IEC61249-2-21.
Technical Context
This device operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interfacing with 3.3 V and 5 V microcontrollers without gate drivers. Its low RDS(on) and high transconductance (gfs = 5–12 S) support efficient conduction and fast switching in hard-switched topologies.
The MOSFET integrates a robust intrinsic body diode with reverse recovery time trr = 180 ns and Qrr = 1.2 µC, suitable for freewheeling in inductive loads. Avalanche capability (IAR = 13.5 A, EAR = 9 mJ, EAS = 200 mJ) ensures reliability under unclamped inductive switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 100 V DC bus designs with 2× safety margin for transient overvoltage |
| ID (continuous) | 13.5 A at TC = 28 °C - enables 100 W+ load switching with standard heatsinking |
| RDS(on) max | 0.2 Ω at VGS = 5 V, ID = 7 A - limits conduction loss to ≤10 W at 7 A |
| VGS(th) | 1.2–2.0 V - ensures full enhancement with 3.3 V logic-level MCU outputs |
| EAS | 200 mJ - withstands single-pulse inductive energy without failure in motor drives |
| RthJC | ≤1.32 K/W - allows junction temperature rise of ≤125 °C at 95 W dissipation |
| Ciss | 1200–1600 pF - determines gate drive strength requirement for <40 ns turn-on delay |
Pinout & Package
PG-TO220-3 package with isolated tab (drain-connected), through-hole mounting, and Pb-free/halogen-free construction per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; accepts logic-level input (1.2–2.0 V threshold); requires <120 nC total gate charge |
| Pin 2 | Drain (D) | Main power output terminal; electrically connected to metal tab; handles 200 V and 13.5 A |
| Pin 3 | Source (S) | Power return path and reference for gate drive; forms common node with driver ground |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs, eliminating external level shifters |
| Avalanche-rated operation | Single-pulse EAS = 200 mJ ensures survivability during unclamped inductive switching in motor control |
| Low RDS(on) at 5 V | 0.16–0.2 Ω at VGS = 5 V reduces conduction losses by >30% vs. standard 10 V gate MOSFETs |
| Integrated body diode | VSD = 1.2–1.6 V at IF = 27 A supports freewheeling in half-bridge and flyback topologies |
| Thermal performance | RthJC ≤ 1.32 K/W allows 95 W dissipation with minimal heatsink volume in industrial enclosures |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Brushed DC motor H-bridge driver in industrial actuators with 24–48 V supply. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 10–15 A peak currents. Use Value: Logic-level gate enables direct MCU PWM control; avalanche rating prevents failure during back-EMF spikes. | Use Scenario: Primary-side switch in 100 W isolated flyback converter for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 200 V blocking capability. Use Value: Low Ciss and fast tr/tf (<120 ns) reduce switching losses; RDS(on) stability over Tj ensures consistent efficiency. |
| Solar Charge Controllers | Industrial Lighting |
Use Scenario: Battery-side MOSFET in MPPT solar charge controller managing 12–48 V battery banks. IC Role / Device Role / Timing Role: Synchronous rectifier and current-sense switch with reverse polarity protection. Use Value: Low VGS(th) ensures reliable turn-on during low-light conditions; halogen-free packaging meets PV system environmental standards. | Use Scenario: Dimmable LED driver stage controlling 20–30 A constant-current loads in high-bay fixtures. IC Role / Device Role / Timing Role: PWM-controlled current sink switch in buck-derived constant-current topology. Use Value: 13.5 A continuous rating supports high-lumen output; robust SOA curve prevents thermal runaway at 100% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK60ZFP | 600 V VDS, 14 A ID, RDS(on) = 0.42 Ω @ 10 V - higher voltage rating but higher on-resistance and non-logic-level gate | Requires gate driver for 3.3 V MCU; suited for higher-voltage SMPS, not low-voltage motor control | Select only if 600 V blocking is required and gate drive voltage ≥10 V is available |
| IRFZ44NPBF | 55 V VDS, 49 A ID, RDS(on) = 0.028 Ω @ 10 V - lower voltage, higher current, but VGS(th) = 2–4 V (less logic-compatible) | Not suitable for 200 V bus applications; better for 12–24 V high-current loads like automotive starters | Choose only for sub-60 V systems where ultra-low RDS(on) outweighs voltage limitation |
Compared with STP14NK60ZFP and IRFZ44NPBF, BUZ31L H uniquely balances 200 V rating, true logic-level gate (1.2–2.0 V), and 0.2 Ω RDS(on) - making it optimal for 24–48 V industrial motor and power conversion where gate drive simplicity and avalanche robustness are critical.
Availability
BUZ31L H is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and solar charge controllers requiring stable component supply across extended product lifecycles.
Supply support for BUZ31L H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ31L H belongs to the SIPMOS® logic-level power MOSFET product line, designed specifically for high-reliability industrial switching applications demanding avalanche ruggedness and direct microcontroller compatibility.
FAQ
Is BUZ31L H compatible with 3.3 V microcontroller GPIOs?
Yes. With a guaranteed gate threshold voltage range of 1.2–2.0 V and typical RDS(on) fully enhanced at VGS = 5 V, BUZ31L H achieves low on-resistance when driven directly from 3.3 V logic outputs - confirmed by its 1.6 V typ VGS(th) and 0.16 Ω typ RDS(on) at VGS = 5 V and ID = 7 A.
What is the maximum safe operating temperature for continuous operation?
The BUZ31L H has a maximum junction temperature of +150 °C and a storage temperature range of −55 to +150 °C. Continuous operation at full 13.5 A requires maintaining case temperature ≤28 °C via adequate heatsinking, as specified in the Absolute Maximum Ratings table on page 1 of Rev. 2.4.
Does BUZ31L H include built-in ESD protection?
Yes. BUZ31L H is rated Class 1 per MIL-STD-883 Human Body Model (HBM) for ESD sensitivity, indicating integrated gate oxide protection sufficient for standard handling in controlled environments - though external gate resistors and TVS diodes are still recommended in noisy industrial layouts.
Can BUZ31L H replace BUZ31L in existing designs?
Yes. BUZ31L H is a halogen-free, Pb-free variant of BUZ31L with identical electrical specifications, pinout, and thermal performance. The "H" suffix denotes compliance with IEC61249-2-21, and no layout or drive circuit changes are required for drop-in replacement in RoHS-compliant manufacturing.
BUZ31L H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ31L H FAQ
1.How can I place an order for BUZ31L H through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ31L H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ31L H reliable?
The price and inventory of BUZ31L H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31L H is usually 5 days.
3.What payment methods are accepted for BUZ31L H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31L H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ31L H?
BUZ31L H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ31L H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ31L H?
For technical support, including BUZ31L H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31L H requirements.
6.How does Aetrix verify that BUZ31L H is sourced from the original manufacturer or authorized distributors?
All BUZ31L H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31L H meets industry standards.
7.What is the process for return or replacement of BUZ31L H?
All BUZ31L H units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31L H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ31L H part is unused and in its original packaging.
Return procedure for BUZ31L H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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