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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS84PH6327XTSA1

Name: BSS84PH6327XTSA1
Brand: Infineon Technologies
SKU: BSS84PH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS84PH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS84PH6327XTSA1.pdf

Description:: MOSFET P-CH 60V 170MA SOT23-3

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Product details

Overview

BSS84PH6327XTSA1 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET in PG-SOT-23 package, rated for −60 V V_DS, 8 Ω R_DS(on) at −4.5 V V_GS, and −0.17 A continuous drain current; used in low-power load switching and level-shifting circuits in automotive body electronics and industrial sensor interfaces.

For engineers reviewing the BSS84PH6327XTSA1 datasheet, BSS84PH6327XTSA1 pinout, BSS84PH6327XTSA1 application, or BSS84PH6327XTSA1 equivalent, key selection criteria include avalanche energy rating (2.6 mJ), dv/dt immunity (−6 kV/µs), gate threshold voltage range (−1.0 to −2.0 V), and AEC-Q101 qualification for automotive use.

Technical Context

This device operates as a normally-off P-channel switch with logic-compatible gate drive, enabling direct interfacing with 3.3 V and 5 V microcontrollers without level translation. Its −1.5 V typical V_GS(th) and low input capacitance (15 pF C_iss) support fast switching in space-constrained applications.

The MOSFET features integrated avalanche ruggedness and robust dv/dt immunity, verified under repetitive unclamped inductive switching (UIS) conditions with E_AS = 2.6 mJ and di/dt = −200 A/µs. Thermal resistance R_thJA is 300 K/W on 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	−60 V - supports rail-to-rail switching in 24 V automotive and industrial supply domains
R_DS(on) @ −4.5 V	8 Ω max - enables ≥100 mA load control with <0.8 V drop at logic-level gate drive
I_D Continuous	−0.17 A @ 25°C - suitable for LED drivers, bias networks, and signal path switches
V_GS(th)	−1.0 to −2.0 V - ensures reliable turn-on with standard CMOS outputs
E_AS	2.6 mJ - provides single-pulse inductive load protection without external snubbers
C_iss	15 pF typ - minimizes gate drive power and propagation delay in high-frequency control
dv/dt Immunity	−6 kV/µs - prevents false triggering in noisy motor or relay environments

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with exposed drain pad for thermal conduction. Marking: "YBs".

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level voltage to modulate channel conductivity
Pin 2	Source	Reference node for gate drive; tied to higher potential in high-side switch configurations
Pin 3	Drain	Power output node; thermally connected to PCB copper for heat dissipation

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive temperature range (−40°C to +150°C) and mechanical stress requirements
Logic-Level Gate Drive	Turns fully on with −4.5 V V_GS, eliminating need for gate driver ICs in 3.3 V systems
Avalanche-Rated	Withstands unclamped inductive energy up to 2.6 mJ without failure
Halogen-Free Construction	Complies with IEC61249-2-21; supports RoHS-compliant and environmentally regulated designs
ESD Robustness	HBM Class 0 (≥2 kV) per JESD22-A114-HBM - reduces handling sensitivity during assembly

Applications

Automotive Door Module

Industrial Sensor Biasing

Use Scenario: Controlling window lift motor enable/disable and mirror fold/unfold functions in centralized body control units.

IC Role / Device Role / Timing Role: High-side load switch managing 12 V DC loads with microcontroller GPIO interface.

Use Value: −1.5 V V_GS(th) ensures clean turn-on at battery voltages down to 9 V; avalanche rating protects against back-EMF from brushed motors.

Use Scenario: Providing stable bias current to analog pressure or temperature sensors in factory automation nodes.

IC Role / Device Role / Timing Role: Precision current source switch enabling sensor power gating during sleep cycles.

Use Value: Low R_DS(on) drift over temperature (±15% from −40°C to +125°C) maintains sensor accuracy across ambient extremes.

USB-C Port Protection

Low-Power IoT Node Power Management

Use Scenario: Reverse polarity and overvoltage protection in USB-C receptacle circuits with dual-role power delivery.

IC Role / Device Role / Timing Role: P-channel front-end switch isolating downstream circuitry from faulted upstream sources.

Use Value: −6 kV/µs dv/dt immunity prevents latch-up during hot-plug transients; 0.93 V V_SD forward drop minimizes insertion loss.

Use Scenario: Enabling/disabling RF transceivers and memory peripherals in battery-powered edge devices.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate controlled by MCU wake-up signals.

Use Value: IDSS ≤ −0.1 µA at 125°C ensures <1 µA leakage during multi-week deep sleep states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LFG-7	R_DS(on) = 4.5 Ω @ −4.5 V; SOT-23-3 but with different pinout (G-S-D vs G-D-S)	Higher current capability (−0.3 A), but requires PCB layout revision due to reversed drain/source pins	Select when lower on-resistance is critical and board redesign is feasible
SI2301DS-T1-E3	R_DS(on) = 11 Ω @ −4.5 V; no AEC-Q101 qualification; C_iss = 22 pF	Suitable for consumer-grade portable equipment only; not recommended for automotive or industrial environments	Choose for cost-sensitive non-automotive applications where qualification is not required

Compared with DMN2053LFG-7 and SI2301DS-T1-E3, BSS84PH6327XTSA1 offers balanced performance: AEC-Q101 compliance, moderate R_DS(on), and superior dv/dt immunity-making it optimal for automotive and harsh-environment designs where reliability outweighs marginal R_DS(on) gains.

Availability

BSS84PH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and USB-C protection circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for BSS84PH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions.

The BSS84P series belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high-reliability, logic-level switching in automotive and industrial applications where ruggedness and qualification matter.

FAQ

What is the maximum safe operating voltage for BSS84PH6327XTSA1?

The absolute maximum drain-source voltage is −60 V, validated per JEDEC JESD78. Operation above −54 V at 125°C is derated per the V(BR)DSS vs. T_A curve (Page 7 of datasheet Rev 2.7); sustained operation beyond this requires thermal margin analysis and may reduce lifetime.

Can BSS84PH6327XTSA1 be used in high-side switch configurations?

Yes-it is specifically designed for high-side switching with its P-channel topology and logic-level gate threshold. Source connects to the positive rail, drain to the load, and gate driven relative to source; proper gate pull-up and slew rate control are required to avoid shoot-through in bridge topologies.

Is the H6327 suffix indicative of tape-and-reel packaging?

Yes-H6327 denotes 3,000-piece tape-and-reel packaging per DIN EN 60286-3, with carrier tape width 8 mm and pocket pitch 4 mm. This format is compatible with standard SMT pick-and-place equipment and supports automated manufacturing.

Does BSS84PH6327XTSA1 have an integrated body diode, and what are its characteristics?

Yes-the intrinsic body diode has V_SD = −0.93 V typical at −0.17 A and reverse recovery time t_rr = 23 ns. It supports freewheeling in inductive loads but is not optimized for synchronous rectification; external Schottky diodes are recommended for high-efficiency DC-DC applications.

BSS84PH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS84PH6327XTSA1 FAQ

1.How can I place an order for BSS84PH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84PH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84PH6327XTSA1 reliable?

The price and inventory of BSS84PH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84PH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSS84PH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84PH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84PH6327XTSA1?

BSS84PH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84PH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84PH6327XTSA1?

For technical support, including BSS84PH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84PH6327XTSA1 requirements.

6.How does Aetrix verify that BSS84PH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS84PH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84PH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSS84PH6327XTSA1?

All BSS84PH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84PH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84PH6327XTSA1 part is unused and in its original packaging.

Return procedure for BSS84PH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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