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Infineon Technologies SPP15P10PHXKSA1

Part No.:
SPP15P10PHXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSPP15P10PHXKSA1.pdf
Description:
MOSFET P-CH 100V 15A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,727

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Product details

Overview

SPP15P10PHXKSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal power MOSFET in PG-TO220-3 package, rated for -100 V VDS, -15 A continuous drain current, and 240 mΩ maximum RDS(on) at VGS = -10 V, avalanche-rated for robust switching in DC-DC converters and motor control stages.

For engineers reviewing the SPP15P10PHXKSA1 datasheet, SPP15P10PHXKSA1 pinout, SPP15P10PHXKSA1 application, or SPP15P10PHXKSA1 equivalent, key selection criteria include its -100 V breakdown voltage, -15 A thermal-current capability, avalanche energy rating (230 mJ), gate threshold of -4 to -2.1 V, and RoHS-compliant lead-free plating.

Technical Context

This device operates in enhancement mode with normal-level gate drive, requiring negative VGS for conduction. Its P-channel topology enables high-side switching without level-shifting circuitry, and its avalanche rating supports unclamped inductive load handling in relay drivers and H-bridge half-bridges.

Thermal performance is defined by RthJC = 1.17 K/W and RthJA = 45 K/W (with 6 cm² copper area), while dynamic parameters include Ciss = 1280 pF, Qg = 48 nC, and tr/tf = 23/16 ns - enabling efficient 100 kHz–500 kHz switching in compact power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100 V - Withstands reverse-biased drain-source voltage up to rated breakdown, suitable for 48 V bus systems with margin.
ID (continuous)-15 A at TC = 25 °C - Supports sustained load current in industrial power switches and solenoid drivers.
RDS(on) max240 mΩ at VGS = -10 V - Limits conduction loss to ≤3.6 W at -15 A, enabling thermally constrained PCB layouts.
EAS230 mJ - Absorbs single-pulse inductive energy without failure, critical for relay and motor coil snubbing.
VGS(th)-4 to -2.1 V - Ensures reliable turn-on with standard logic-level negative gate drivers (e.g., TC4427 inverting output).
Qg48 nC - Determines gate drive power requirement; compatible with 1–2 A peak gate drivers for <500 ns switching transitions.
Ciss1280 pF - Sets input impedance and Miller effect magnitude, influencing gate drive stability in high-dV/dt environments.
Tj range-55 to +175 °C - Qualified per AEC-Q101, supporting under-hood automotive and industrial ambient conditions.

Pinout & Package

Supplied in PG-TO220-3 package with isolated tab (drain-connected), standardized mechanical footprint and thermal interface for bolt-down heatsink mounting.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to system ground or low-side return path in high-side configurations.
Pin 2 (Gate)Control terminalReceives negative VGS to enable channel; requires series resistor (10–47 Ω) to damp ringing and limit dI/dt.
Pin 3 (Drain)Power output terminalConnected to heatsink via isolated tab; carries full load current and must be routed with low-inductance layout.

Key Features

FeatureDesign Value
Avalanche-rated operationSingle-pulse EAS = 230 mJ ensures survivability during inductive turn-off transients without external clamping.
Pb-free & halogen-freeRoHS-compliant plating and IEC61249-2-21 halogen-free construction meet automotive and industrial environmental mandates.
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress testing.
Low gate chargeQg = 48 nC reduces driver power dissipation and enables faster switching than comparable -100 V P-channel devices.
Enhancement-mode P-channelZero gate bias keeps device off; simplifies control logic versus depletion-mode or N-channel high-side solutions.

Applications

Automotive Door Lock ActuatorsIndustrial DC Motor Braking

Use Scenario: Driving 12 V/24 V solenoid locks with bidirectional current control via H-bridge configuration.

IC Role / Device Role / Timing Role: High-side P-channel switch providing controlled pull-up to battery rail during lock engagement.

Use Value: Avalanche rating absorbs back-EMF from solenoid de-energization, eliminating need for discrete flyback diodes.

Use Scenario: Rapid forced commutation of brushed DC motors during dynamic braking cycles.

IC Role / Device Role / Timing Role: Low-loss P-channel switch sinking motor current through internal body diode during regenerative braking phase.

Use Value: RDS(on) ≤ 240 mΩ limits braking power loss to <5.5 W at 15 A, reducing heatsink mass in space-constrained enclosures.

48 V Telecom Power ORingProgrammable Load Switches

Use Scenario: Redundant 48 V supply ORing in base station power distribution units.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch enabling seamless source switchover with minimal forward drop.

Use Value: VSD = -0.94 V at -15 A provides lower conduction loss than Schottky diodes, improving efficiency by >1.2% at full load.

Use Scenario: Controlled power-up sequencing for FPGA or DSP core rails in test equipment.

IC Role / Device Role / Timing Role: Soft-start-capable P-channel load switch isolating downstream circuitry until system reset completes.

Use Value: Gate threshold (-4 to -2.1 V) allows direct interface with 3.3 V microcontroller GPIOs using simple inverter stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NPBFRDS(on) = 200 mΩ (lower), but VBR(DSS) = -100 V same; Qg = 65 nC (higher); no AEC-Q101 qualification.Higher gate drive loss and no automotive qualification limit use to non-automotive industrial designs.Select when lowest RDS(on) is prioritized over avalanche ruggedness and qualification.
STP16PF10VBR(DSS) = -100 V, RDS(on) = 220 mΩ, EAS = 180 mJ (lower); TO-220FP package (smaller height, lower thermal resistance).Reduced avalanche margin may require external clamping in high-energy inductive loads.Prefer for space-constrained layouts where vertical clearance is limited and avalanche stress is moderate.

Compared with IRF9540NPBF and STP16PF10, SPP15P10PHXKSA1 delivers superior avalanche ruggedness (230 mJ), AEC-Q101 compliance, and optimized gate charge for fast switching-making it preferred for automotive and mission-critical industrial power control.

Availability

SPP15P10PHXKSA1 is available at Aetrix Electronics and suitable for automotive door lock actuators, industrial DC motor braking, and 48 V telecom ORing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SPP15P10PHXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's SIPMOS® P-channel MOSFET product line, engineered for high-reliability switching in automotive body electronics and industrial power conversion where avalanche tolerance and AEC-Q101 compliance are mandatory.

FAQ

Is SPP15P10PHXKSA1 suitable for high-frequency PWM applications?

Yes - with tr = 23 ns, tf = 16 ns, and Qg = 48 nC, it supports clean switching up to 500 kHz in hard-switched topologies. Layout must minimize gate loop inductance and use appropriate gate resistors to suppress oscillation.

Does the device integrate a body diode, and what are its characteristics?

Yes - it features an integrated anti-parallel body diode rated for -15 A continuous forward current and -60 A pulsed current. VSD is -0.94 V typical at -15 A and 25 °C, with trr = 100–150 ns and Qrr = 419–628 nC, suitable for freewheeling in buck and H-bridge circuits.

What thermal derating applies above 25 °C case temperature?

Continuous drain current drops linearly from -15 A at TC = 25 °C to -10.6 A at TC = 100 °C. Power dissipation falls from 55 W to 175 W (pulse) and 56 W (DC), governed by RthJC = 1.17 K/W and PCB copper area per datasheet footnote 1.

Can SPP15P10PHXKSA1 replace N-channel MOSFETs in high-side configurations?

Yes - as a P-channel device, it simplifies high-side switching by eliminating level-shifting circuitry required for N-channel counterparts. However, its RDS(on) is higher than equivalent N-channel parts, so conduction loss must be evaluated against system efficiency targets.

SPP15P10PHXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
128W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

SPP15P10PHXKSA1 FAQ

1.How can I place an order for SPP15P10PHXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP15P10PHXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP15P10PHXKSA1 reliable?

The price and inventory of SPP15P10PHXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP15P10PHXKSA1 is usually 5 days.

3.What payment methods are accepted for SPP15P10PHXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP15P10PHXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP15P10PHXKSA1?

SPP15P10PHXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP15P10PHXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP15P10PHXKSA1?

For technical support, including SPP15P10PHXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP15P10PHXKSA1 requirements.

6.How does Aetrix verify that SPP15P10PHXKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP15P10PHXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP15P10PHXKSA1 meets industry standards.

7.What is the process for return or replacement of SPP15P10PHXKSA1?

All SPP15P10PHXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP15P10PHXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP15P10PHXKSA1 part is unused and in its original packaging.

Return procedure for SPP15P10PHXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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