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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB812PBF

Name: IRFB812PBF
Brand: Infineon Technologies
SKU: IRFB812PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB812PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB812PBF.pdf

Description:: MOSFET N CH 500V 3.6A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,680

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Product details

Overview

IRFB812PBF from Infineon Technologies (formerly International Rectifier) is a 500V, 3.6A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-voltage switching in offline SMPS, AC-DC adapters, and industrial motor controls. It features 1.75Ω R_DS(on) at V_GS = 10V, 75ns reverse recovery time (t_rr), and integrated body diode with 1.2V forward voltage at 3.6A.

For engineers reviewing the IRFB812PBF datasheet, IRFB812PBF pinout, IRFB812PBF application, or IRFB812PBF equivalent, key selection criteria include breakdown voltage margin (500V), thermal resistance (R_θJC = 1.8°C/W), unclamped avalanche energy rating, gate charge (Q_g = 20nC), and body diode recovery performance in hard-switched topologies.

Technical Context

This device operates as a unidirectional high-side or low-side switch in DC-DC converters and AC-DC front-ends, leveraging its 500V V_(BR)DSS to withstand transient overvoltages in 230VAC mains-connected systems. Its 1.75Ω R_DS(on) enables conduction losses below 22.7W at 3.6A, while t_rr = 75ns supports operation up to ~100kHz with controlled di/dt-induced ringing.

The MOSFET integrates a fast-recovery body diode (Q_rr = 135nC, I_RRM = 3.2A) and exhibits 0.37V/°C positive V_(BR)DSS temperature coefficient-critical for parallel operation stability. Gate threshold voltage (V_GS(th) = 3.0–5.0V) ensures compatibility with standard 10V gate drivers while avoiding spurious turn-on under noise.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500V - Withstands 230VAC line peaks plus 100% surge margin without avalanche breakdown
R_DS(on) @ V_GS = 10V	1.75Ω - Limits conduction loss to ≤22.7W at rated 3.6A continuous drain current
t_rr	75ns - Enables reliable hard-switching at ≤100kHz with minimized diode reverse recovery stress
Q_g	20nC - Requires ≤200mW average gate drive power at 100kHz and 10V swing
R_θJC	1.8°C/W - Allows 78W dissipation with ≤140°C junction rise above 25°C case temperature
I_D @ T_C = 100°C	2.3A - Defines usable current derating in thermally constrained enclosures
V_SD	1.2V @ 3.6A - Sets forward conduction loss of integrated body diode during freewheeling

Pinout & Package

TO-220AB package: three-terminal through-hole plastic package with isolated tab (drain-connected), standard mounting hole, and 1.1N·m screw torque rating. Tab is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate control and current return path	Common connection point for load return and gate driver ground reference
Gate	Control input for channel modulation	High-impedance MOS gate requiring <20nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
Enhancement-mode N-channel structure	Ensures normally-off operation-no external pull-down required for safe startup
Fast body diode with Q_rr = 135nC	Reduces switching loss and voltage overshoot in flyback and LLC resonant converters
100% UIS-tested avalanche capability	Guarantees single-pulse energy handling up to 700mJ without failure in inductive switching
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile
Positive V_(BR)DSS tempco (0.37V/°C)	Improves current sharing stability when paralleling multiple devices

Applications

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 230VAC-input 30W adapter with flyback topology operating at 65kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 500V rating accommodates 380VDC bus transients; 75ns t_rr minimizes diode recovery loss during MOSFET turn-on.

Use Scenario: 3-phase inverter stage for 0.5kW brushless DC motor with discrete gate drivers.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, commutating motor phase current.

Use Value: 1.75Ω R_DS(on) limits conduction loss to <23W at 3.6A; 2.3A rating at 100°C supports ambient-tolerant design.

LED Streetlight Drivers

Uninterruptible Power Supplies (UPS)

Use Scenario: Constant-current buck-boost LED driver for 100W outdoor luminaire with 90–305VAC input range.

IC Role / Device Role / Timing Role: Main switching transistor regulating output current via peak-current-mode control.

Use Value: 1.2V V_SD ensures low-loss freewheeling during off-time; 1.8°C/W R_θJC enables direct heatsink mounting without thermal interface degradation.

Use Scenario: Line-interactive UPS with boost PFC stage feeding 12V battery backup system.

IC Role / Device Role / Timing Role: Boost switch handling 390VDC bus in continuous conduction mode (CCM).

Use Value: 500V V_(BR)DSS provides 20% headroom above nominal 390V bus; 20nC Q_g reduces gate driver power demand in high-efficiency designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500V, 4.5A, R_DS(on) = 1.4Ω, t_rr = 100ns, Zener-protected gate	Higher current rating but slower diode recovery; less suitable for high-frequency flyback	Prefer where higher ID and gate ruggedness outweigh t_rr sensitivity
FQP5N50C	500V, 4.5A, R_DS(on) = 1.4Ω, no specified t_rr, TO-220F package (isolated tab)	Non-isolated tab in IRFB812PBF requires insulation; FQP5N50C offers built-in isolation	Choose FQP5N50C when heatsink grounding simplification is critical

Compared with STP5NK50ZFP and FQP5N50C, IRFB812PBF delivers tighter t_rr control (75ns vs ≥100ns) and verified UIS robustness-making it preferable in high-reliability, high-frequency SMPS where diode recovery governs EMI and efficiency.

Availability

IRFB812PBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFB812PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-voltage, medium-current switching in industrial-grade power conversion systems with emphasis on avalanche ruggedness and thermal reliability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB812PBF supports 2.3A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in enclosed or high-ambient environments to maintain junction temperature ≤150°C.

Is the drain tab electrically isolated from the package mount surface?

No-the drain terminal is directly connected to the metal tab in the TO-220AB package. Electrical isolation requires a mica or polymer insulator washer and non-conductive thermal compound when mounting to a grounded heatsink, otherwise risk of short-circuit exists.

Does this MOSFET have built-in gate protection?

No, the IRFB812PBF lacks integrated gate Zener clamping or ESD protection diodes. External gate resistors (typically 10–47Ω) and TVS diodes between gate and source are recommended to suppress voltage spikes and prevent oxide damage during layout or switching transients.

Can IRFB812PBF replace IRF812 in existing designs?

Yes-IRFB812PBF is a direct drop-in replacement for IRF812, sharing identical pinout, package, and electrical specifications. The "PBF" suffix indicates lead-free compliance per RoHS, with no functional or thermal performance difference from the legacy IRF812 variant.

IRFB812PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB812PBF FAQ

1.How can I place an order for IRFB812PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB812PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB812PBF reliable?

The price and inventory of IRFB812PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB812PBF is usually 5 days.

3.What payment methods are accepted for IRFB812PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB812PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB812PBF?

IRFB812PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB812PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB812PBF?

For technical support, including IRFB812PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB812PBF requirements.

6.How does Aetrix verify that IRFB812PBF is sourced from the original manufacturer or authorized distributors?

All IRFB812PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB812PBF meets industry standards.

7.What is the process for return or replacement of IRFB812PBF?

All IRFB812PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB812PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB812PBF part is unused and in its original packaging.

Return procedure for IRFB812PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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