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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R420CFDFKSA1

Name: IPW65R420CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R420CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R420CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R420CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 8.7A TO247-3

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Product details

Overview

IPW65R420CFDFKSA1 from Infineon Technologies is a 650V, 8.7A (T_C=25°C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.42 Ω (max), Q_g = 31.5 nC (typ), and E_oss = 2.8 µJ @ 400V. It integrates an ultra-fast, robust body diode (t_rr = 90 ns, Q_rr = 0.3 µC) and is optimized for resonant switching topologies in high-efficiency AC-DC power supplies for PC Silverbox and telecom rectifiers.

For engineers reviewing the IPW65R420CFDFKSA1 datasheet, IPW65R420CFDFKSA1 pinout, IPW65R420CFDFKSA1 application, or IPW65R420CFDFKSA1 equivalent, key selection criteria include its 650V V_DSS, low R_DS(on)×Q_g figure-of-merit, high di/dt ruggedness (900 A/µs), JEDEC industrial qualification, and TO-247 thermal performance (R_thJC = 1.5 °C/W).

Technical Context

This CoolMOS™ CFD2 device uses superjunction architecture to achieve simultaneous low conduction loss (R_DS(on) = 0.42 Ω) and low switching loss (E_oss = 2.8 µJ @ 400V). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (6.4 V) support standard 10–15 V gate drivers without level-shifting.

The integrated body diode delivers t_rr = 90 ns and I_rrm = 6.2 A with 900 A/µs commutation capability-enabling reliable ZVS operation in LLC resonant converters. dv/dt ruggedness of 50 V/ns ensures noise immunity in high-frequency hard-switched PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V RMS in universal-input AC-DC designs with margin.
R_DS(on) max	0.42 Ω @ T_J = 25°C - Enables <8.7 A continuous current at 25°C case temperature with low conduction loss.
Q_g typ	31.5 nC - Low gate charge reduces driver power demand and enables efficient 100–300 kHz switching.
E_oss @ 400V	2.8 µJ - Minimizes turn-on energy loss in resonant and soft-switching topologies.
t_rr	90 ns - Fast reverse recovery supports ZVS in LLC half-bridge and phase-shifted full-bridge converters.
di/dt ruggedness	900 A/µs - Sustains high-current commutation stress without failure in synchronous rectification or bidirectional switches.
P_tot	83.3 W @ T_C = 25°C - Delivers high power density in TO-247 with R_thJC = 1.5 °C/W for heatsink-limited designs.

Pinout & Package

IPW65R420CFDFKSA1 is housed in a TO-247 package (PG-TO247) with isolated tab, rated for industrial mounting torque (60 Ncm). The drain-connected tab provides low-inductance, high-current path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10–15 V drive signal; R_G = 4 Ω typical enables fast switching with minimal ringing.
Pin 2 (Drain)	High-side power terminal	Connected to internal die drain; electrically tied to metal tab for low-inductance heatsinking.
Pin 3 (Source)	Reference return	Serves as local ground reference for gate driver; must be routed with low inductance to minimize shoot-through risk.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 90 ns, Q_rr = 0.3 µC - Eliminates need for external SiC/Schottky anti-parallel diodes in resonant LLC primary switches.
High commutation ruggedness	900 A/µs di/dt rating - Supports reliable operation under hard commutation in asymmetric half-bridge and active clamp flyback.
Low R_DS(on) × Q_g FOM	0.42 Ω × 31.5 nC = 13.23 Ω·nC - Reduces total switching + conduction loss vs. legacy SJ-MOSFETs in 100–200 kHz PFC stages.
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - Validated for 150°C junction operation and 1000-cycle temperature cycling in server PSU environments.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-609A Class 1 requirements for lead-free assembly and environmental compliance.

Applications

PC Silverbox Power Supply

LCD TV Main SMPS

Use Scenario: Primary-side switch in 300–500W LLC resonant converter operating at 200–350 kHz with ZVS.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus; enables zero-voltage turn-on via body diode conduction prior to gate drive.

Use Value: 2.8 µJ E_oss and 90 ns t_rr reduce switching loss by >15% vs. standard SJ-MOSFETs, enabling >94% efficiency at full load.

Use Scenario: Active clamp flyback primary switch in 120–200W backlight power supply with 65–100 kHz operation.

IC Role / Device Role / Timing Role: High-side switch clamping transformer reset energy; requires high dv/dt immunity and robust body diode for clamp loop conduction.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering; 900 A/µs di/dt rating ensures reliable clamp discharge without oscillation or failure.

Telecom Rectifier Module

Server PSU Front-End PFC

Use Scenario: Boost switch in 1–3 kW telecom rectifier with interleaved continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: High-current, high-voltage switch conducting up to 8.7 A RMS with low R_DS(on) to minimize conduction loss at 100 kHz.

Use Value: 0.42 Ω R_DS(on) limits I²R loss to <3.2 W at 8.7 A, reducing heatsink size by 35% versus 0.65 Ω alternatives.

Use Scenario: Switch in 80+ Titanium-certified 1.5 kW server PSU with two-phase interleaved boost PFC.

IC Role / Device Role / Timing Role: Primary power switch managing 400 V DC link; demands low Q_g for driver efficiency and high thermal robustness for 150°C ambient operation.

Use Value: 31.5 nC Q_g cuts gate driver power by ~22% vs. 40 nC devices; R_thJC = 1.5 °C/W enables direct heatsink mounting without thermal interface degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R045C7	R_DS(on) = 0.045 Ω (lower), Q_g = 62 nC (higher), E_oss = 11.5 µJ @ 400V (higher)	Better conduction loss but higher switching loss; suited for <100 kHz hard-switched PFC	Select when conduction loss dominates (e.g., high-current, low-frequency PFC); avoid in >200 kHz resonant designs due to elevated E_oss.
STP65N6F6	R_DS(on) = 0.058 Ω, Q_g = 55 nC, no specified t_rr or di/dt rating; non-CoolMOS™ trench-gate structure	Lacks ultra-fast body diode and commutation ruggedness; not validated for ZVS LLC	Acceptable only in non-resonant, lower-frequency (<80 kHz) applications where diode recovery is not critical.

Compared with IPW65R045C7 and STP65N6F6, IPW65R420CFDFKSA1 offers optimal balance of switching efficiency (low E_oss, fast t_rr) and ruggedness (900 A/µs di/dt) for resonant topologies-making it uniquely suitable for high-frequency, high-reliability server and telecom power conversion where ZVS and commutation stress are design-critical.

Availability

IPW65R420CFDFKSA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main SMPS, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IPW65R420CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD2 product line-designed specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in industrial and telecom applications where body diode performance and commutation ruggedness are critical.

FAQ

What is the maximum continuous drain current for IPW65R420CFDFKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, derated from 8.7 A at 25°C per the datasheet's thermal limit curve. This reflects junction temperature constraints under real heatsink conditions-not ambient rating-and assumes proper PCB copper area and thermal interface resistance.

Does IPW65R420CFDFKSA1 support zero-voltage switching (ZVS) in LLC resonant converters?

Yes-its ultra-fast body diode (t_rr = 90 ns, Q_rr = 0.3 µC) and high di/dt ruggedness (900 A/µs) enable reliable ZVS turn-on in LLC half-bridge topologies. The low E_oss (2.8 µJ @ 400V) further minimizes turn-on loss during resonant transitions.

Is the TO-247 package of IPW65R420CFDFKSA1 electrically insulated?

No-the TO-247 package has a conductive metal tab directly connected to the drain terminal. Electrical isolation must be achieved using insulating shoulder washers or isolated mounting kits when attaching to grounded heatsinks.

How does the gate threshold voltage affect drive circuit design for IPW65R420CFDFKSA1?

With V_GS(th) = 3.5–4.5 V, the device turns on fully at standard 10–15 V gate drive. A minimum 6 V drive is recommended to ensure robust operation across temperature and process variation; gate drivers must supply ≥31.5 nC total charge with ≤3.4 Ω series resistance to control ringing.

IPW65R420CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R420CFDFKSA1 FAQ

1.How can I place an order for IPW65R420CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R420CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R420CFDFKSA1 reliable?

The price and inventory of IPW65R420CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R420CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R420CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R420CFDFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R420CFDFKSA1?

IPW65R420CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R420CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R420CFDFKSA1?

For technical support, including IPW65R420CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R420CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R420CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R420CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R420CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R420CFDFKSA1?

All IPW65R420CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R420CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R420CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R420CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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