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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6811STR1PBF

Name: IRF6811STR1PBF
Brand: Infineon Technologies
SKU: IRF6811STR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6811STR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6811STR1PBF.pdf

Description:: MOSFET N CH 25V 19A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6811STR1PBF from Infineon Technologies (formerly International Rectifier) is a 25 V, 150 A N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, optimized as the control FET in high-frequency synchronous buck converters operating from a 12 V bus for CPU core power delivery. It delivers 2.8 mΩ R_DS(on) @ 10 V, 4.1 mΩ @ 4.5 V, 11 nC total gate charge, and ultra-low 0.4 Ω gate resistance.

For engineers reviewing the IRF6811STR1PBF datasheet, IRF6811STR1PBF pinout, IRF6811STR1PBF application, or IRF6811STR1PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, dual-sided cooling capability, <0.7 mm profile, and avalanche-rated operation for robust DC-DC converter control-stage design.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® SQ packaging to achieve 80% lower thermal resistance versus prior-generation packages. Its gate threshold voltage (1.6 V typ.) and steep transconductance (180 S) enable fast, low-loss switching at high frequencies up to 1 MHz.

The device integrates an intrinsic body diode with 18 ns reverse recovery time and 23 nC Q_rr, supporting synchronous rectification while maintaining tight control over dv/dt and di/dt during hard-switching transitions in multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum drain-source blocking voltage for 12 V bus applications with margin against transients.
R_DS(on) @ 10 V	2.8 mΩ - Enables <1 W conduction loss at 150 A, critical for high-current CPU core rails.
R_DS(on) @ 4.5 V	4.1 mΩ - Ensures strong turn-on under low-voltage gate drive from modern PWM controllers.
Q_g total	11 nC - Minimizes gate drive power and enables efficient 500 kHz–1 MHz switching in VRMs.
R_θJC	3.9 °C/W - Low junction-to-case thermal resistance supports dual-sided cooling for thermal management.
I_D @ T_C = 25°C	150 A - Continuous current rating at case temperature, validated for high-power density layouts.
E_AS	150 mJ - Single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching.

Pinout & Package

The IRF6811STR1PBF uses the DirectFET® SQ surface-mount package (4.8 × 3.8 × 0.7 mm), featuring top-side drain and bottom-side source terminals for dual-sided thermal interface. No discrete gate pin - gate is accessed via dedicated edge pad.

Pin/Terminal	Circuit Role	Design Meaning
Top metal surface	Drain (D)	Primary high-current path and thermal interface; soldered directly to heatsink or copper plane.
Bottom metal pads (outer)	Source (S)	Low-inductance return path; connects to ground plane and provides secondary thermal path.
Edge pad (center)	Gate (G)	Control terminal with 0.4 Ω internal gate resistance; minimizes ringing in high-dv/dt environments.

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous heat extraction from top (drain) and bottom (source), reducing system-level thermal resistance by 80% vs. SO-8.
Ultra-low package inductance	Minimizes switching voltage overshoot and EMI in high-di/dt CPU power stages (≥300 A/µs).
Optimized for control FET role	Low Q_gd/Q_g ratio (4.2/11 nC) improves Miller immunity and enables stable 12 V → sub-1 V conversion.
100% R_g tested	Guarantees gate resistance ≤0.4 Ω per unit, ensuring consistent turn-on timing across production lots.

Applications

Server CPU Voltage Regulator

AI Accelerator Core Power

Use Scenario: Multiphase buck converter delivering 0.8 V @ 600 A to high-end Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz with precise dead-time control and low R_DS(on).

Use Value: 2.8 mΩ R_DS(on) @ 10 V reduces conduction loss by >30% vs. legacy 3.5 mΩ devices, improving full-load efficiency.

Use Scenario: High-density VRM supplying 0.75 V @ 800 A to GPU or AI ASIC die.

IC Role / Device Role / Timing Role: Primary high-side switch in interleaved 6+ phase topology with tight thermal constraints.

Use Value: 0.7 mm profile and dual-sided cooling allow stacking of power stages without airflow blockage in OCP-compliant modules.

5G Baseband Power Supply

Automotive ADAS Domain Controller

Use Scenario: Compact 12 V input → 1.2 V output buck converter powering FPGA-based radio processing units.

IC Role / Device Role / Timing Role: Fast-switching control FET enabling >92% efficiency at 300 kHz with minimal output capacitance.

Use Value: 11 nC Q_g and 0.4 Ω R_g reduce gate driver losses and simplify layout versus higher-Q_g alternatives.

Use Scenario: ASIL-B compliant 12 V → 1.0 V core supply for radar SoC in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Avalanche-rated control FET handling load dump and cold-crank transients in safety-critical power rail.

Use Value: 150 mJ E_AS rating ensures reliable operation during unclamped inductive events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPBF	Higher R_DS(on) (3.2 mΩ @ 10 V), same DirectFET SQ package, 12.5 nC Q_g	Slightly lower efficiency at full load; identical footprint and thermal behavior	Select when cost sensitivity outweighs marginal efficiency gain of IRF6811STR1PBF.
IPB017N10N5ATMA1	100 V rating, TO-263 package, 1.7 mΩ @ 10 V, but 42 nC Q_g and no dual-sided cooling	Not suitable for 12 V bus control FET due to excessive switching loss and thermal bottleneck	Avoid for high-frequency CPU VRMs; consider only for lower-frequency, higher-voltage industrial SMPS.

Compared with IRF6662TRPBF and IPB017N10N5ATMA1, the IRF6811STR1PBF uniquely balances ultra-low R_DS(on), minimal Q_g, and dual-sided thermal architecture-making it the only option qualified for next-gen server and AI accelerator core power where both efficiency and thermal density are co-constrained.

Availability

IRF6811STR1PBF is available at Aetrix Electronics and suitable for server CPU voltage regulation, AI accelerator core power, and automotive ADAS domain controller designs requiring stable component supply and long-term lifecycle support.

Supply support for IRF6811STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The DirectFET® product line was engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure-prioritizing thermal performance, switching speed, and layout compatibility over legacy package constraints.

FAQ

What is the maximum continuous drain current for IRF6811STR1PBF at 70°C ambient?

The IRF6811STR1PBF supports 19 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² Cu board). This rating assumes still-air convection and accounts for thermal derating beyond 25°C ambient, as specified in the Absolute Maximum Ratings table on page 3 of the official datasheet.

Does IRF6811STR1PBF require special PCB layout considerations for thermal performance?

Yes - optimal thermal performance requires full-surface soldering of the top drain pad to a large copper area or heatsink, and bottom source pads to a dedicated ground plane. Application Note AN-1035 mandates specific stencil design, reflow profile, and solder mask clearance to ensure void-free solder joints and maximize dual-sided cooling efficacy.

Can IRF6811STR1PBF be used as a synchronous rectifier (low-side FET)?

No - the IRF6811STR1PBF is optimized as a control (high-side) FET with asymmetric gate charge distribution (Q_gd = 4.2 nC, Q_gs2 = 1.4 nC) and body diode characteristics tailored for fast turn-off in hard-switched topologies. Its R_DS(on) and Q_rr are not optimized for freewheeling conduction like dedicated sync rectifiers.

Is IRF6811STR1PBF RoHS compliant and halogen-free?

Yes - the IRF6811STR1PBF is fully RoHS compliant (2011/65/EU) and halogen-free per IEC 61249-2-21, with lead-free termination and green molding compound. The "PbF" suffix explicitly denotes lead-free packaging, and the date code marking includes a line above the last character to indicate lead-free status per IR's package specification.

IRF6811STR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1590 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 32W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6811STR1PBF FAQ

1.How can I place an order for IRF6811STR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6811STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6811STR1PBF reliable?

The price and inventory of IRF6811STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6811STR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6811STR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6811STR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6811STR1PBF?

IRF6811STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6811STR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6811STR1PBF?

For technical support, including IRF6811STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6811STR1PBF requirements.

6.How does Aetrix verify that IRF6811STR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6811STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6811STR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6811STR1PBF?

All IRF6811STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6811STR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6811STR1PBF part is unused and in its original packaging.

Return procedure for IRF6811STR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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