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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI4410ZGPBF

Name: IRFI4410ZGPBF
Brand: Infineon Technologies
SKU: IRFI4410ZGPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI4410ZGPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFI4410ZGPBF.pdf

Description:: MOSFET N-CH 100V 43A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:8,662

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Product details

Overview

IRFI4410ZGPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 43A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB Full-Pak package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.9 mΩ typical R_DS(on), 81 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust operation in UPS and telecom power systems.

For engineers reviewing the IRFI4410ZGPBF datasheet, IRFI4410ZGPBF pinout, IRFI4410ZGPBF application, or IRFI4410ZGPBF equivalent, key selection criteria include its 100V V_DSS, 43A continuous drain current at T_C = 25°C, 3.2°C/W junction-to-case thermal resistance, avalanche-rated design (310 mJ E_AS), and halogen-free/lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell layout to deliver low conduction loss and fast switching performance. Its fully characterized SOA includes thermally limited avalanche energy rating and dynamic dV/dt ruggedness validated up to 100V/ns under specified test conditions.

The integrated body diode exhibits 47–71 ns reverse recovery time (t_rr) and 110–160 nC reverse recovery charge (Q_rr) at 26A, enabling reliable operation in synchronous rectifier configurations without external Schottky supplementation in many mid-power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in DC-DC converters and UPS inverters.
R_DS(on) typ.	7.9 mΩ @ V_GS = 10 V, T_J = 25°C - Directly determines conduction loss and thermal rise in high-current paths (e.g., 43A × 7.9 mΩ ≈ 14.3 W dissipation).
I_D cont.	43 A @ T_C = 25°C - Specifies maximum steady-state current with heatsink; derates to 30 A at T_C = 100°C.
Q_g	81 nC max - Gate drive energy requirement; impacts driver sizing and switching loss in 100–500 kHz SMPS designs.
E_AS	310 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching survival in relay drivers or motor control snubbers.
R_θJC	3.2 °C/W - Thermal path efficiency from junction to case; critical for heatsink interface design and transient thermal management.
t_rr	47–71 ns - Body diode reverse recovery speed; limits minimum dead-time in synchronous rectifiers to avoid shoot-through.

Pinout & Package

IRFI4410ZGPBF uses the TO-220AB Full-Pak package - a through-hole variant with insulated tab, designed for direct mounting to heatsinks without electrical isolation hardware. The package integrates a copper leadframe and epoxy-molded body for improved thermal transfer and mechanical robustness over standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with 5 V and 3.3 V controllers.
D (Drain)	High-side power terminal	Connected to input bus or transformer secondary; handles full load current and withstands 100 V transients.
S (Source)	Power return and reference node	Serves as common return for gate drive and load current; body diode anode is internally tied to source.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	310 mJ single-pulse E_AS with validated thermal failure model - eliminates need for external clamping in flyback or forward converter primary switches.
Optimized body diode dI/dt capability	Rated for 100 A/μs di/dt during reverse recovery - suppresses oscillation and voltage overshoot in high-dI/dt synchronous rectifier turn-off.
Lead-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21 - supports environmentally compliant industrial and telecom equipment manufacturing.
Full characterization of C_oss eff.	C_oss(ER) = 420 pF and C_oss(TR) = 680 pF - enables accurate soft-switching loss prediction and ZVS transition timing in resonant LLC topologies.

Applications

Server PSU Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: Used as secondary-side synchronous rectifier in 12 V/500 W server power supply with 300 kHz LLC resonant controller.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; body diode conducts during dead-time, then MOSFET channel carries main current.

Use Value: Achieves >0.8% efficiency gain over 40 V Schottky due to 7.9 mΩ R_DS(on) vs. 0.45 V forward drop, reducing heat sink size by 35%.

Use Scenario: High-side switch in 48 V DC input to 230 V AC line-interactive UPS inverter bridge.

IC Role / Device Role / Timing Role: Fast-turning power switch handling 43 A peak load current; avalanche rating absorbs inductive kickback during grid-fail transitions.

Use Value: Eliminates need for external TVS clamps due to 310 mJ E_AS, simplifying BOM and improving reliability under battery-backup overload conditions.

Telecom DC-DC Brick

Motor Drive Half-Bridge

Use Scenario: Primary switch in 48 V input, 12 V output isolated forward converter for telecom base station power module.

IC Role / Device Role / Timing Role: Hard-switched 200 kHz PWM device with gate charge optimized for low driver loss; body diode not actively used.

Use Value: 81 nC Q_g enables use of low-cost dual-MOSFET drivers (e.g., IR2110), reducing gate drive component count by 40% versus higher-Q_g alternatives.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 30 A stall current in factory automation actuator.

IC Role / Device Role / Timing Role: Provides bidirectional current path with body diode freewheeling during PWM off-time.

Use Value: 170 A pulsed source current rating (I_SM) supports 5× stall current surges without SOA violation, extending lifetime under jam conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10	R_DS(on) = 30 mΩ (higher), Q_g = 75 nC, V_DSS = 100 V, TO-220 package without Full-Pak insulation	Lacks enhanced body diode dI/dt rating and avalanche SOA validation; requires external gate resistor for safe paralleling	Preferred where cost sensitivity outweighs efficiency and ruggedness requirements; unsuitable for synchronous rectification above 20 A.
IXTP44N10P	R_DS(on) = 12.5 mΩ, Q_g = 95 nC, V_DSS = 100 V, TO-220 package with lower E_AS (220 mJ)	Higher gate charge increases driver loss; reduced avalanche margin limits use in unclamped inductive loads	Better for low-frequency switching (<50 kHz); avoid in high-dI/dt UPS or SMPS where IRFI4410ZGPBF's 100 A/μs rating is critical.

Compared with STP40NF10 and IXTP44N10P, IRFI4410ZGPBF delivers superior conduction efficiency (7.9 mΩ), verified avalanche robustness (310 mJ), and body diode dynamics optimized for synchronous rectification - making it the preferred choice for high-reliability, high-frequency power conversion where thermal and transient margins are constrained.

Availability

IRFI4410ZGPBF is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI4410ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and optimized for high-efficiency, high-reliability power conversion in industrial and telecom infrastructure applications.

FAQ

Is IRFI4410ZGPBF suitable for surface-mount assembly?

No. The TO-220AB Full-Pak package is explicitly rated for through-hole mounting only. Its internal construction and thermal path are optimized for screw-mounted heatsink interfaces, and the datasheet states "TO-220AB Full-Pak packages are not recommended for Surface Mount Application." Reflow or wave soldering risks delamination and thermal stress failure.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±30 V. Operation beyond this rating risks permanent gate oxide damage. For reliable 10 V enhancement, gate drive circuits must clamp negative excursions below –20 V and limit positive overshoot to ≤15 V using RC snubbers or active clamping, especially in high-dV/dt environments.

Does the body diode require external anti-parallel diode protection?

No. The integrated body diode is fully characterized for dV/dt (≥100 V/ns) and dI/dt (100 A/μs) performance, and its reverse recovery parameters (t_rr = 47–71 ns, Q_rr = 110–160 nC) are validated for synchronous rectifier use. External diodes add parasitic inductance and degrade efficiency unless required by specific layout constraints.

How does thermal derating affect continuous current at elevated case temperatures?

At T_C = 100°C, the continuous drain current drops from 43 A (at 25°C) to 30 A due to R_DS(on) increase and thermal SOA limitation. Derating follows a linear factor of 0.3 W/°C above 25°C, meaning power dissipation must be reduced by 0.3 W per °C rise in case temperature to maintain safe junction temperature.

IRFI4410ZGPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4910 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFI4410ZGPBF FAQ

1.How can I place an order for IRFI4410ZGPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI4410ZGPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI4410ZGPBF reliable?

The price and inventory of IRFI4410ZGPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4410ZGPBF is usually 5 days.

3.What payment methods are accepted for IRFI4410ZGPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4410ZGPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI4410ZGPBF?

IRFI4410ZGPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI4410ZGPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI4410ZGPBF?

For technical support, including IRFI4410ZGPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4410ZGPBF requirements.

6.How does Aetrix verify that IRFI4410ZGPBF is sourced from the original manufacturer or authorized distributors?

All IRFI4410ZGPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4410ZGPBF meets industry standards.

7.What is the process for return or replacement of IRFI4410ZGPBF?

All IRFI4410ZGPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4410ZGPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI4410ZGPBF part is unused and in its original packaging.

Return procedure for IRFI4410ZGPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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