Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6894MTR1PBF

Name: IRF6894MTR1PBF
Brand: Infineon Technologies
SKU: IRF6894MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6894MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6894MTR1PBF.pdf

Description:: MOSFET N-CH 25V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,296

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6894MTR1PBF from Infineon Technologies is a 25 V, 37 A N-channel Power MOSFET in DirectFET™ MX package with integrated Schottky diode, optimized for synchronous buck converter high-side and low-side (Sync FET) sockets. It delivers 0.9 mΩ R_DS(on) @ 10 V, 31 nC total gate charge, and dual-sided cooling capability for CPU core DC-DC converters.

For engineers reviewing the IRF6894MTR1PBF datasheet, IRF6894MTR1PBF pinout, IRF6894MTR1PBF application, or IRF6894MTR1PBF equivalent, key selection criteria include ultra-low on-resistance at 4.5 V gate drive, Q_rr of 58 nC for reduced switching loss in high-frequency operation, thermal resistance R_θJC of 2.3 °C/W, and compatibility with existing SO-8 footprint layouts.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ MX packaging-metal-can, top-drain, double-sided thermal interface-to achieve sub-1 mΩ conduction resistance while maintaining low gate charge (Q_g = 31 nC) and gate resistance (R_G = 0.2 Ω). Its integrated monolithic Schottky diode reduces body diode Q_rr by suppressing minority carrier storage.

The device is characterized for operation up to 150 °C junction temperature, with V_GS(th) = 1.6 V (typ), dV_GS(th)/dT_J = −3.8 mV/°C, and avalanche-rated E_AS = 540 mJ. It supports high-frequency PWM switching in synchronous rectification due to fast turn-on (t_d(on) = 17 ns) and turn-off (t_d(off) = 23 ns) delays under 4.5 V drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin.
R_DS(on) @ 10 V	0.9 mΩ - Enables <1 W conduction loss at 37 A, critical for >90% efficiency in CPU VRMs.
R_DS(on) @ 4.5 V	1.4 mΩ - Ensures robust low-voltage gate drive performance in modern controller ICs.
Q_g	31 nC - Low total gate charge minimizes driver power and enables >1 MHz switching.
Q_rr	58 nC - Integrated Schottky diode reduces reverse recovery charge vs. standard body diode.
R_θJC	2.3 °C/W - Enables high-power dissipation via direct can-to-heatsink thermal path.
V_GS(th)	1.6 V (typ) - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

IRF6894MTR1PBF uses the DirectFET™ MX (Medium Can, X-designation) package: metal-can, top-drain, bottom-source/gate terminals, 0.7 mm profile, SO-8 footprint-compatible layout. Dimensions: 6.3 mm × 5.05 mm × 0.7 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Metal Can)	High-current power output node	Thermally and electrically connected to PCB copper pour or heatsink; primary heat extraction surface.
Source (Bottom Pad)	Reference node for channel current	Low-inductance return path; soldered to ground plane for minimal loop inductance.
Gate (Bottom Pad)	Control terminal for channel conduction	Isolated pad adjacent to Source; requires controlled impedance routing to minimize ringing.

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous top-can and bottom-pad thermal transfer, improving R_θJA by 80% vs. SO-8 packages.
Integrated monolithic Schottky diode	Reduces Q_rr to 58 nC, eliminating external diode need and minimizing dead-time losses in sync buck.
Low-profile 0.7 mm height	Allows dense component placement in space-constrained VRM modules and mobile computing power stages.
SO-8 footprint compatibility	Permits drop-in replacement in legacy layouts without PCB redesign or stencil changes.
100% R_G tested	Ensures consistent gate resistance (0.2 Ω typ) across production lots for predictable switching behavior.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V at up to 200 A to modern x86 or Arm-based processors.

IC Role / Device Role / Timing Role: Sync FET in low-side position, switching at 500 kHz–1.5 MHz with precise dead-time control.

Use Value: 0.9 mΩ R_DS(on) and 58 nC Q_rr reduce conduction + switching losses by ≥12% vs. prior-gen 30 V MOSFETs.

Use Scenario: Compact, thermally constrained VRM on discrete GPU PCBs requiring >150 A per phase at ≤1 V.

IC Role / Device Role / Timing Role: High-frequency Sync FET handling rapid load transients with minimal voltage droop.

Use Value: Dual-sided cooling maintains T_J < 115 °C under 180 A peak, enabling fanless operation.

Server Memory Channel Regulator

AI Accelerator Board Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory subsystems delivering 1.1 V at 60–100 A per channel.

IC Role / Device Role / Timing Role: Low-side switch operating with 3.3 V gate drive from digital PWM controller.

Use Value: 1.4 mΩ R_DS(on) @ 4.5 V ensures stable regulation during burst-mode access patterns.

Use Scenario: Multi-phase power delivery to FPGA or ASIC fabric with dynamic current demands exceeding 300 A.

IC Role / Device Role / Timing Role: High-efficiency Sync FET supporting >1 MHz switching to shrink passive size.

Use Value: 31 nC Q_g and 0.2 Ω R_G enable clean 1.2 V/250 A transient response with <50 mV droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPbF	R_DS(on) = 1.3 mΩ @ 10 V; Q_g = 22 nC; no integrated Schottky diode	Higher Q_rr (105 nC) increases switching loss in high-frequency sync buck	Preferred where gate drive strength is limited and thermal budget allows higher R_DS(on)
SIZ202DT-T1-GE3	R_DS(on) = 0.85 mΩ @ 10 V; Q_g = 35 nC; TrenchFET® Gen IV, PQFN 5×6 mm	Higher gate charge increases driver loss; no top-side cooling interface	Selected when board-level thermal design favors bottom-side-only heatsinking

Compared with IRF6662TRPbF and SIZ202DT-T1-GE3, IRF6894MTR1PBF uniquely combines ultra-low R_DS(on), integrated Schottky diode, and dual-sided cooling-making it optimal for thermally aggressive, high-frequency CPU/GPU VRMs where both conduction and switching losses must be minimized simultaneously.

Availability

IRF6894MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6894MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6894MTR1PBF supports 29 A continuous drain current at T_A = 70°C with V_GS = 10 V, based on silicon-limited rating and thermal derating per R_θJA = 12.5 °C/W (double-sided cooled). This value assumes proper PCB copper area and airflow per AN-1035 guidelines.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by low R_G (0.2 Ω) and parasitic inductance in high-di/dt switching. The datasheet specifies t_r = 47 ns and t_f = 13 ns with R_G = 1.8 Ω, confirming design sensitivity to gate loop inductance.

Can IRF6894MTR1PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.02 %/°C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and shared thermal interface to avoid thermal runaway; typical designs use 2–4 devices per phase.

Is the integrated Schottky diode rated for continuous conduction?

No-the integrated Schottky diode is optimized for reverse recovery suppression during synchronous rectification, not continuous forward conduction. Its forward voltage is 0.75 V at 30 A and 25°C, but sustained source current must remain within the MOSFET's 37 A continuous rating (T_J ≤ 150°C) and thermal limits.

IRF6894MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 4160 pF @ 13 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 2.1W (Ta), 54W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6894MTR1PBF FAQ

1.How can I place an order for IRF6894MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6894MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6894MTR1PBF reliable?

The price and inventory of IRF6894MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6894MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6894MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6894MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6894MTR1PBF?

IRF6894MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6894MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6894MTR1PBF?

For technical support, including IRF6894MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6894MTR1PBF requirements.

6.How does Aetrix verify that IRF6894MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6894MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6894MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6894MTR1PBF?

All IRF6894MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6894MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6894MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6894MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…