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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF520NSTRL MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	4,958	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520NSTRR MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	4,760	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520STRR MOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix	6,925	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF530L MOSFET N-CH 100V 14A TO262 Vishay Siliconix	2,346	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF540L MOSFET N-CH 100V 28A TO262 Vishay Siliconix	4,954	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	28A (Tc)	10V	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF614L MOSFET N-CH 250V 2.7A TO262 Vishay Siliconix	7,731	RFQ	-	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	2Ohm @ 1.6A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	140 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
IRF624L MOSFET N-CH 250V 4.4A I2PAK Vishay Siliconix	5,797	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	4.4A (Tc)	10V	1.1Ohm @ 2.6A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF630L MOSFET N-CH 200V 9A I2PAK Vishay Siliconix	3,792	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	9A (Tc)	10V	400mOhm @ 5.4A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	800 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF634L MOSFET N-CH 250V 8.1A I2PAK Vishay Siliconix	7,568	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	8.1A (Tc)	10V	450mOhm @ 5.1A, 10V	4V @ 250µA	41 nC @ 10 V	±20V	770 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF7207TR MOSFET P-CH 20V 5.4A 8SO Infineon Technologies	8,463	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5.4A (Tc)	2.7V, 4.5V	60mOhm @ 5.4A, 4.5V	700mV @ 250µA (Min)	22 nC @ 4.5 V	±12V	780 pF @ 15 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7322D1TR MOSFET P-CH 20V 5.3A 8SO Infineon Technologies	9,614	RFQ	Datasheet	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5.3A (Ta)	2.7V, 4.5V	62mOhm @ 2.9A, 4.5V	700mV @ 250µA (Min)	29 nC @ 4.5 V	±12V	780 pF @ 15 V	Schottky Diode (Isolated)	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7324D1TR MOSFET P-CH 20V 2.2A 8SO Infineon Technologies	4,679	RFQ	Datasheet	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	2.2A (Ta)	2.7V, 4.5V	270mOhm @ 1.2A, 4.5V	700mV @ 250µA (Min)	7.8 nC @ 4.5 V	±12V	260 pF @ 15 V	Schottky Diode (Isolated)	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7402TR MOSFET N-CH 20V 6.8A 8SO Infineon Technologies	8,557	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	6.8A (Ta)	2.7V, 4.5V	35mOhm @ 4.1A, 4.5V	700mV @ 250µA (Min)	22 nC @ 4.5 V	±12V	650 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF740LCL MOSFET N-CH 400V 10A I2PAK Vishay Siliconix	2,746	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF740LCSTRL MOSFET N-CH 400V 10A D2PAK Vishay Siliconix	2,060	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF7452TR MOSFET N-CH 100V 4.5A 8SO Infineon Technologies	8,065	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	4.5A (Ta)	10V	60mOhm @ 2.7A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	930 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7463TR MOSFET N-CH 30V 14A 8SO Infineon Technologies	8,143	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	14A (Ta)	2.7V, 10V	8mOhm @ 14A, 10V	2V @ 250µA	51 nC @ 4.5 V	±12V	3150 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7466TR MOSFET N-CH 30V 11A 8SO Infineon Technologies	6,520	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	12.5mOhm @ 11A, 10V	3V @ 250µA	23 nC @ 4.5 V	±20V	2100 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7467TR MOSFET N-CH 30V 11A 8SO Infineon Technologies	6,172	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	2.8V, 10V	12mOhm @ 11A, 10V	2V @ 250µA	32 nC @ 4.5 V	±12V	2530 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF820ASTRR MOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix	9,301	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	500 V	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	4.5V @ 250µA	17 nC @ 10 V	±30V	340 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)

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