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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF624L

Name: IRF624L
Brand: Vishay Siliconix
SKU: IRF624L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF624L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF624L.pdf

Description:: MOSFET N-CH 250V 4.4A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF624L from Vishay Siliconix is a 250 V, 4.4 A N-channel power MOSFET in TO-220AB package, optimized for switching power supplies, motor controls, and DC-DC converters with fast switching, repetitive avalanche rating, and low R_DS(on) of 1.1 Ω at V_GS = 10 V.

For engineers reviewing the IRF624L datasheet, IRF624L pinout, IRF624L application, or IRF624L equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 2.5 °C/W), gate charge metrics (Q_g = 14 nC), avalanche energy ratings (E_AS = 100 mJ), and TO-220AB mechanical interface details - all confirmed from Vishay's official S21-0819-Rev. C datasheet.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve ruggedized avalanche performance and stable R_DS(on) over temperature (ΔV_DS/T_J = 0.36 V/°C). Its dynamic dV/dt rating of 4.8 V/ns supports reliable operation in noisy high-speed switching environments.

The device integrates a fast-recovery body diode (t_rr = 200–400 ns, Q_rr = 0.93–1.9 μC) and features low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), enabling clean turn-on/turn-off waveforms under hard-switching conditions with R_g = 18 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input voltages up to 200 V DC in offline SMPS designs without derating
R_DS(on)	1.1 Ω @ V_GS = 10 V - limits conduction loss to ≤10 W at 3 A continuous drain current
Q_g	14 nC - enables efficient gate drive with standard 1-A peak drivers at ≤500 kHz switching
E_AS	100 mJ - sustains unclamped inductive switching events in relay/motor driver snubberless topologies
t_r/t_f	13 ns / 12 ns - reduces switching transition losses and EMI generation in high-frequency converters
R_thJC	2.5 °C/W - allows ≥40 W dissipation with modest heatsinking (e.g., 10 cm² aluminum fin)
I_D (T_C = 100 °C)	2.8 A - defines usable current limit in enclosed industrial enclosures without forced air

Pinout & Package

IRF624L is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized lead spacing (2.54 mm), and 1.6 mm creepage distance from case. The package provides low thermal resistance (R_thJC = 2.5 °C/W) and mechanical robustness for industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 260 pF shapes gate resistor selection
D (Drain)	High-side power terminal	Internally connected to metal tab; requires insulated mounting when heatsink is grounded
S (Source)	Reference node / return path	Common return for load current and gate drive reference; source inductance L_S = 7.5 nH impacts switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.4 A repetitive I_AR and 5.0 mJ E_AR, enabling robust operation in inductive load switching without external clamping
Dynamic dV/dt immunity	Rated 4.8 V/ns - prevents false turn-on during high-slew-rate transients in half-bridge configurations
Fast body diode recovery	t_rr = 200–400 ns with Q_rr = 0.93–1.9 μC - minimizes cross-conduction loss in synchronous rectifier and freewheeling applications
Low gate charge	Q_g = 14 nC with Q_gd/Q_gs = 2.9 - improves Miller immunity and enables stable paralleling of multiple devices

Applications

Switch-Mode Power Supply	Motor Drive Stage
Use Scenario: Primary-side switch in 20–50 W offline flyback converter operating at 65–132 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 250 V V_DS margin accommodates reflected output voltage + leakage spike; R_DS(on) = 1.1 Ω keeps conduction loss <1.5 W at full load.	Use Scenario: Low-side switch driving brushed DC motor (24–48 V, 2–4 A) in industrial actuator. IC Role / Device Role / Timing Role: PWM-controlled power stage delivering variable torque via duty-cycle modulation. Use Value: Repetitive avalanche rating handles back-EMF spikes during abrupt stop; t_r/t_f < 15 ns ensures clean PWM edges at 20 kHz.
DC-DC Converter	Lighting Ballast
Use Scenario: High-side switch in non-isolated buck converter for 12 V → 5 V/3 A point-of-load regulation. IC Role / Device Role / Timing Role: Main power transistor regulating output voltage via pulse-width control. Use Value: Q_g = 14 nC enables efficient drive from microcontroller GPIO with 10 Ω series resistor; C_oss = 77 pF minimizes capacitive switching loss.	Use Scenario: Resonant switch in electronic CFL ballast operating at 30–60 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor in half-bridge resonant tank. Use Value: Body diode Q_rr = 1.9 μC ensures soft commutation; dV/dt = 4.8 V/ns prevents spurious turn-on during resonant voltage reversal.

Switch-Mode Power Supply

Motor Drive Stage

Use Scenario: Primary-side switch in 20–50 W offline flyback converter operating at 65–132 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding.

Use Value: 250 V V_DS margin accommodates reflected output voltage + leakage spike; R_DS(on) = 1.1 Ω keeps conduction loss <1.5 W at full load.

Use Scenario: Low-side switch driving brushed DC motor (24–48 V, 2–4 A) in industrial actuator.

IC Role / Device Role / Timing Role: PWM-controlled power stage delivering variable torque via duty-cycle modulation.

Use Value: Repetitive avalanche rating handles back-EMF spikes during abrupt stop; t_r/t_f < 15 ns ensures clean PWM edges at 20 kHz.

DC-DC Converter

Lighting Ballast

Use Scenario: High-side switch in non-isolated buck converter for 12 V → 5 V/3 A point-of-load regulation.

IC Role / Device Role / Timing Role: Main power transistor regulating output voltage via pulse-width control.

Use Value: Q_g = 14 nC enables efficient drive from microcontroller GPIO with 10 Ω series resistor; C_oss = 77 pF minimizes capacitive switching loss.

Use Scenario: Resonant switch in electronic CFL ballast operating at 30–60 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor in half-bridge resonant tank.

Use Value: Body diode Q_rr = 1.9 μC ensures soft commutation; dV/dt = 4.8 V/ns prevents spurious turn-on during resonant voltage reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60Z	600 V V_DS, 1.8 Ω R_DS(on), TO-220FP package (lower PD = 20 W)	Higher voltage margin but higher on-resistance and lower power handling; unsuitable for >2.5 A continuous loads	Select only if system requires >400 V blocking with reduced thermal budget
IRF630	200 V V_DS, 0.4 Ω R_DS(on), same TO-220AB package and pinout	Lower voltage rating limits use to ≤160 V DC bus; superior conduction efficiency below 200 V	Prefer for 100–180 V applications where lower R_DS(on) outweighs reduced avalanche margin

Compared with STP2NK60Z and IRF630, IRF624L uniquely balances 250 V capability, 1.1 Ω on-resistance, and 100 mJ single-pulse avalanche energy - making it optimal for 200 V-class industrial SMPS and motor drives requiring both voltage headroom and ruggedness.

Availability

IRF624L is available at Aetrix Electronics and suitable for switch-mode power supplies, motor control circuits, and DC-DC converters requiring stable component supply, long-term industrial lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF624L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRF624L belongs to Vishay's third-generation power MOSFET product line, engineered specifically for industrial and commercial switching applications demanding high avalanche energy, fast switching, and stable on-resistance across temperature.

FAQ

What is the maximum continuous drain current for IRF624L at 100 °C case temperature?

The IRF624L supports a continuous drain current of 2.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 4.4 A at 25 °C using the 0.40 W/°C factor, and must be validated against actual board-level thermal performance in the target application layout.

Does IRF624L have a fully rated avalanche capability, and what are its limits?

Yes, IRF624L is repetitively avalanche rated: I_AR = 4.4 A and E_AR = 5.0 mJ under specified test conditions (V_DD = 50 V, L = 8.3 mH, R_g = 25 Ω). Single-pulse avalanche energy reaches 100 mJ. These ratings assume junction temperature remains within -55 °C to +150 °C and pulse width is limited by thermal constraints per Figure 11.

What is the gate threshold voltage range for IRF624L, and how does it affect drive design?

The IRF624L has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 µA. This wide range necessitates gate drive ≥10 V for full enhancement and low R_DS(on); logic-level drivers (e.g., 5 V) will yield significantly higher on-resistance and must be avoided unless verified via characterization at worst-case V_GS(th).

Can IRF624L be paralleled with identical units, and what design considerations apply?

Yes, IRF624L is designed for ease of paralleling due to positive temperature coefficient of R_DS(on) and low Q_gd/Q_gs ratio (2.9). To ensure current sharing, use matched gate resistors (≤5 Ω), symmetrical PCB layout, common source star grounding, and individual gate drive paths - especially critical above 5 A total current.

What is the body diode forward voltage of IRF624L, and how does it impact freewheeling operation?

The IRF624L body diode exhibits V_SD = 1.8 V max at I_S = 4.4 A and T_J = 25 °C. In freewheeling applications, this forward drop contributes directly to conduction loss; combined with t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC, it determines reverse recovery loss and potential shoot-through risk in synchronous topologies.

IRF624L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF624L FAQ

1.How can I place an order for IRF624L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF624L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF624L reliable?

The price and inventory of IRF624L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624L is usually 5 days.

3.What payment methods are accepted for IRF624L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF624L?

IRF624L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF624L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF624L?

For technical support, including IRF624L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624L requirements.

6.How does Aetrix verify that IRF624L is sourced from the original manufacturer or authorized distributors?

All IRF624L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624L meets industry standards.

7.What is the process for return or replacement of IRF624L?

All IRF624L units undergo pre-shipment inspection (PSI). If there is an issue with IRF624L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF624L part is unused and in its original packaging.

Return procedure for IRF624L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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