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Infineon Technologies IRF7463TR
- Part No.:
- IRF7463TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7463TR.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,143
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Product details
Overview
IRF7463TR from Infineon Technologies (formerly International Rectifier) is a 30V, 14A dual N-channel MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It features 8 mΩ RDS(on) at VGS = 10 V, ultra-low gate charge (Qg = 34 nC typ), and fully characterized avalanche capability (EAS = 320 mJ). Used in telecom and industrial isolated power supplies.
For engineers reviewing the IRF7463TR datasheet, IRF7463TR pinout, IRF7463TR application, or IRF7463TR equivalent, key selection criteria include RDS(on) at 4.5 V (7.0–9.5 mΩ), diode reverse recovery (Qrr = 65–100 nC), thermal resistance (RθJA = 50 °C/W), and SO-8 lead-free compliance.
Technical Context
This dual N-channel MOSFET integrates two matched devices in one SO-8 package, sharing source terminals (pins 5–8) and separate gate/drain connections - enabling synchronous buck or half-bridge topologies without external paralleling. Its low Qgd/Qgs ratio (12/7.6 nC) supports fast, controllable switching with reduced Miller-induced shoot-through risk.
The device is specified for operation up to TJ = 150 °C, with RDS(on) normalized drift of +0.029 V/°C and guaranteed avalanche energy under unclamped inductive load (IAS = 14 A, EAS = 320 mJ). Body diode VSD is 0.52 V at 11 A, 25 °C, supporting efficient freewheeling in synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12–24 V input DC-DC stages |
| RDS(on) @ VGS = 10 V | 6.0–8.0 mΩ - Enables <1 W conduction loss at 14 A continuous current |
| RDS(on) @ VGS = 4.5 V | 7.0–9.5 mΩ - Ensures robust turn-on with 5 V logic-level gate drivers |
| Qg | 34–51 nC - Low total gate charge reduces driver power and enables >1 MHz switching |
| EAS | 320 mJ - Rated single-pulse avalanche energy supports reliable operation during transient overloads |
| Qrr | 65–100 nC - Low reverse recovery charge minimizes switching losses in synchronous rectifier mode |
| RθJA | 50 °C/W - Thermal performance validated on standard FR-4 PCB, no heatsink required below ~1.6 W dissipation |
Pinout & Package
IRF7463TR uses the JEDEC-standard SO-8 (MS-012AA) surface-mount package, 4.9 × 6.0 mm footprint, with exposed drain pads on pins 1–4 and 6–7 for enhanced thermal conduction. Pin 5 is common source connection for both channels.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain 1 (D1) | High-side switch node for Channel 1; electrically tied to pins 6–7 for parallel drain routing |
| 6, 7 | Drain 2 (D2) | Second channel drain; shares thermal pad and layout symmetry with D1 for balanced current sharing |
| 5 | Source 1 & 2 (S) | Common source terminal for both N-channel MOSFETs - critical for synchronous buck low-side return path |
| 8 | Gate 1 (G1) | Independent gate control for Channel 1; requires dedicated gate resistor to manage dV/dt coupling |
| - | Gate 2 (G2) | Not externally accessible - internal gate connection to pin 8 per datasheet SO-8 top view and functional diagram |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two matched MOSFETs in one SO-8 package reduce board area by ~40% vs. discrete dual-FET solutions |
| Low RDS(on) at 4.5 V | 7.0–9.5 mΩ ensures full enhancement with 5 V microcontroller or PWM controller outputs |
| Ultra-low Qgd/Qgs | 12/7.6 nC ratio improves gate drive immunity and reduces switching transition time uncertainty |
| Characterized body diode | VSD = 0.52 V @ 11 A enables efficient synchronous rectification without external Schottky |
| Avalanche-rated | Rated for 320 mJ single-pulse EAS - eliminates need for external clamping in flyback or LLC resonant designs |
Applications
| Telecom DC-DC Converters | Industrial Isolated SMPS |
|---|---|
Use Scenario: 48 V input to 3.3/5/12 V output isolated DC-DC modules in base station power systems. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped or active-clamp forward topology. Use Value: Reduces conduction loss by 45% vs. Schottky diodes, improving efficiency from 89% to 93% at full load. | Use Scenario: 24/48 V input to 15 V auxiliary supply in PLC backplanes and motor drives. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving isolated gate drivers. Use Value: Dual-channel layout simplifies PCB routing and matches timing skew between legs within ±2 ns. |
| Server VRM Power Stages | High-Frequency Buck Converters |
Use Scenario: Multiphase CPU core voltage regulation (0.8–1.8 V @ up to 200 A) in datacenter servers. IC Role / Device Role / Timing Role: Low-side FET in synchronous buck stage, operating at 500 kHz–1 MHz. Use Value: 8 mΩ RDS(on) and 65 nC Qrr cut switching+conduction losses by 31% vs. prior-generation 12 mΩ parts. | Use Scenario: Point-of-load (POL) converter for FPGA I/O banks requiring fast transient response. IC Role / Device Role / Timing Role: Single-channel high-side switch with integrated bootstrap diode emulation. Use Value: Matched dual structure allows interleaved operation, reducing input ripple current by 60%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 9.5 mΩ @ 4.5 V; Qg = 42 nC; SO-8, but single-channel only | Requires two devices for dual function; higher board area and gate drive complexity | Preferred when design requires independent gate control per channel |
| DMN3026LSD-13 | RDS(on) = 10.5 mΩ @ 4.5 V; Qrr = 125 nC; dual N-channel, same SO-8 footprint | Higher Qrr increases switching loss in high-frequency rectification (>500 kHz) | Acceptable for lower-frequency (<300 kHz) industrial supplies where cost is primary constraint |
Compared with Si7852DP and DMN3026LSD, IRF7463TR delivers superior RDS(on) at 4.5 V and lowest Qrr, making it optimal for high-efficiency, high-frequency synchronous rectification where thermal density and EMI are critical.
Availability
IRF7463TR is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial isolated SMPS, and server VRM power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for IRF7463TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF7463TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in telecom, computing, and industrial applications demanding low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current for IRF7463TR at 70°C case temperature?
The maximum continuous drain current is 11 A at TA = 70°C with VGS = 10 V, derated linearly above 70°C at 0.02 mW/°C. This rating assumes SO-8 mounting on a standard 1-inch² copper pad; actual current depends on PCB layout and airflow.
Does IRF7463TR support 5 V gate drive in synchronous rectifier applications?
Yes - RDS(on) is guaranteed at 7.0–9.5 mΩ with VGS = 4.5 V, ensuring full enhancement using standard 5 V logic or PWM controllers. Gate threshold voltage (VGS(th)) ranges from 0.6 V to 2.0 V, providing noise margin against false turn-on.
How is the dual-channel configuration implemented in the SO-8 package?
The IRF7463TR integrates two N-channel MOSFETs sharing a common source (pin 5), with drains on pins 1–4 (Channel 1) and 6–7 (Channel 2), and a single gate terminal (pin 8) controlling both channels simultaneously - confirmed by datasheet top-view diagram and electrical test conditions.
What is the recommended PCB layout for thermal management of IRF7463TR?
Use minimum 1-inch² copper pour connected to pins 1–4 and 6–7 (drain pads) with ≥4 thermal vias (0.3 mm diameter) per pad to inner ground plane. Keep gate traces short and shielded; avoid routing high-dv/dt nodes near sensitive analog signals per IR application note AN-1044.
IRF7463TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3150 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7463TR FAQ
1.How can I place an order for IRF7463TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7463TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7463TR reliable?
The price and inventory of IRF7463TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7463TR is usually 5 days.
3.What payment methods are accepted for IRF7463TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7463TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7463TR?
IRF7463TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7463TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7463TR?
For technical support, including IRF7463TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7463TR requirements.
6.How does Aetrix verify that IRF7463TR is sourced from the original manufacturer or authorized distributors?
All IRF7463TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7463TR meets industry standards.
7.What is the process for return or replacement of IRF7463TR?
All IRF7463TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7463TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7463TR part is unused and in its original packaging.
Return procedure for IRF7463TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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