Vishay Siliconix IRF540L
- Part No.:
- IRF540L
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF540L.pdf
- Description:
- MOSFET N-CH 100V 28A TO262
- Quantity:
- Payment:

- Shipping:

Inventory:4,954
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Product details
Overview
IRF540L from Vishay Siliconix is a 100 V, 28 A N-channel power MOSFET in TO-220AB package, featuring 0.077 Ω RDS(on) at VGS = 10 V, 72 nC total gate charge, and 175 °C maximum junction temperature-designed for DC-DC converters, motor drives, and power switching in industrial power supplies.
For engineers reviewing the IRF540L datasheet, IRF540L pinout, IRF540L application, or IRF540L equivalent, key selection criteria include avalanche energy rating (230 mJ), dV/dt capability (5.5 V/ns), body diode recovery time (180–360 ns), and thermal resistance (RthJC = 1.0 °C/W) for high-reliability conduction and switching duty cycles.
Technical Context
This third-generation planar VDMOS device uses ruggedized silicon design with optimized channel geometry to achieve low on-resistance while maintaining robust unclamped inductive switching performance. Its dynamic dV/dt rating and repetitive avalanche capability (IAR = 28 A, EAR = 15 mJ) support reliable operation under transient overvoltage conditions without external snubbers.
The MOSFET integrates a fast, low-Qrr (1.3–2.8 μC) body diode with 180–360 ns reverse recovery time, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate drive simplicity is ensured by a 2.0–4.0 V threshold voltage and low input capacitance (Ciss = 1700 pF at VDS = 25 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) | 0.077 Ω @ VGS = 10 V - enables ≤2.2 W conduction loss at 17 A continuous current |
| Qg | 72 nC - determines gate driver power requirement and switching speed trade-off |
| EAS | 230 mJ - specifies single-pulse unclamped inductive energy handling capability |
| TJ max | +175 °C - allows operation in sealed enclosures or high-ambient industrial environments |
| dV/dt | 5.5 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients |
| ID cont | 28 A @ TC = 25 °C - defines heatsink sizing baseline for forced-air or passive cooling |
Pinout & Package
IRF540L is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.0 °C/W junction-to-case thermal resistance. The package supports direct heatsinking via M3 screw and conforms to JEDEC TO-220 mechanical outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 2.0–4.0 V VGS(th) enables compatibility with 5 V microcontrollers when used with gate buffering |
| D (Drain) | High-side power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits |
| S (Source) | Power return and reference node | Serves as local ground reference for gate drive; source inductance (LS = 7.5 nH) impacts switching waveform ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 28 A IAR, 15 mJ EAR - eliminates need for external clamping in inductive load commutation |
| Fast switching with low Qgd/Qg ratio | Qgd = 32 nC / Qg = 72 nC → 44 % - improves Miller immunity and reduces turn-off delay sensitivity |
| Low RthJC | 1.0 °C/W - enables compact heatsink design with ≤150 W dissipation at ΔT = 150 K |
| Body diode with controlled Qrr | Qrr = 1.3–2.8 μC - minimizes switching losses in non-synchronous buck or flyback freewheeling paths |
| Dynamic dV/dt rating | 5.5 V/ns - prevents spurious turn-on during rapid drain voltage transitions in half-bridge configurations |
Applications
| Motor Drive Stage | DC-DC Power Switch |
|---|---|
Use Scenario: H-bridge control of 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side/low-side power switch managing bidirectional current flow and PWM-based speed regulation. Use Value: 100 V VDS and 28 A ID support peak stall currents up to 110 A (IDM), while 175 °C TJ rating ensures reliability under sustained torque loads. | Use Scenario: Primary-side switch in 300 W isolated forward converter for industrial PLC power supply. IC Role / Device Role / Timing Role: Main power transistor conducting at 100 kHz with 50 % duty cycle, handling 17 A average drain current. Use Value: 0.077 Ω RDS(on) limits conduction loss to <2.2 W; 72 nC Qg enables efficient gate driving with UCC27531-class drivers. |
| Uninterruptible Power Supply | Lighting Ballast Control |
Use Scenario: Inverter stage in 1 kVA offline UPS delivering clean 230 VAC output from 48 V battery bank. IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 50/60 Hz square-wave or modified sine-wave mode with dead-time control. Use Value: Repetitive avalanche rating (28 A IAR) absorbs inductive kickback from transformer leakage inductance during switching transitions. | Use Scenario: Dimmable electronic ballast for 40–60 W fluorescent lamps in commercial lighting fixtures. IC Role / Device Role / Timing Role: Resonant mode switch controlling lamp ignition and steady-state current regulation via frequency modulation. Use Value: Fast body diode (trr = 180–360 ns) and low Coss (560 pF) enable stable zero-voltage switching across wide dimming range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | 600 V VDS, 10 A ID, RDS(on) = 0.75 Ω - higher voltage rating but lower current and higher on-resistance | Designed for high-voltage SMPS primary side; unsuitable for 48 V motor drive due to excessive conduction loss | Select only when >400 V blocking is required; not a functional substitute for IRF540L in low-voltage, high-current roles |
| IRFZ44NPBF | 55 V VDS, 49 A ID, RDS(on) = 0.028 Ω - lower voltage rating but higher current and lower on-resistance | Optimized for 12–24 V automotive and battery-powered systems; derates rapidly above 40 V drain voltage | Preferable for ≤36 V systems needing lower RDS(on); avoid in 48 V+ applications due to VDS margin violation |
Compared with STP10NK60ZFP and IRFZ44NPBF, the IRF540L uniquely balances 100 V blocking, 28 A current, and 0.077 Ω on-resistance for mid-voltage industrial switching-making it irreplaceable in 36–48 V motor control and UPS inverters where both voltage headroom and thermal efficiency are critical.
Availability
IRF540L is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, DC-DC converters, and lighting ballasts requiring stable component supply across multi-year production cycles.
Supply support for IRF540L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and industrial reliability.
The IRF540L belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-current switching in commercial and industrial power conversion where avalanche robustness and thermal stability are mandatory.
FAQ
What is the maximum continuous drain current rating for IRF540L at 100 °C case temperature?
The IRF540L supports 20 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions. The IRF540L datasheet specifies this value explicitly in the Absolute Maximum Ratings section.
Does IRF540L have a built-in body diode, and what are its key parameters?
Yes, the IRF540L integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 28 A continuous source-drain current (IS), 110 A pulsed rating (ISM), 2.5 V forward voltage (VSD) at 28 A and 25 °C, and 180–360 ns reverse recovery time (trr). These values are measured under defined test conditions and directly impact freewheeling efficiency in inductive switching circuits using the IRF540L.
Can IRF540L be driven directly by a 3.3 V microcontroller GPIO pin?
No, the IRF540L cannot be reliably driven by a 3.3 V GPIO pin because its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and full enhancement requires ≥10 V to achieve specified RDS(on) = 0.077 Ω. At 3.3 V, the device operates in weak inversion with high on-resistance (>1 Ω), leading to excessive conduction loss and thermal runaway. A dedicated gate driver such as TC4420 or MIC4422 is required for proper IRF540L operation.
What is the thermal resistance from junction to case (RthJC) for IRF540L, and how does it affect heatsink selection?
The IRF540L has a maximum junction-to-case thermal resistance (RthJC) of 1.0 °C/W, measured from die to TO-220AB metal tab. This low value enables efficient heat transfer to an external heatsink. For example, at 150 W power dissipation and 175 °C maximum junction temperature, a 25 °C ambient requires total system RthJA ≤ 1.0 °C/W - meaning heatsink + interface resistance must be ≤ 0.5 °C/W when combined with the IRF540L's RthJC.
Is IRF540L RoHS-compliant, and what are its lead-free ordering options?
Yes, the IRF540L is available in RoHS-compliant versions. Vishay offers IRF540PbF (lead-free) and IRF540PbF-BE3 (lead-free and halogen-free) variants in TO-220AB package. These part numbers replace legacy leaded versions and meet EU RoHS Directive 2011/65/EU requirements. The IRF540L datasheet confirms compliance status and outlines soldering profiles for both variants.
IRF540L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF540L FAQ
1.How can I place an order for IRF540L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF540L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF540L reliable?
The price and inventory of IRF540L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540L is usually 5 days.
3.What payment methods are accepted for IRF540L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF540L?
IRF540L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF540L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF540L?
For technical support, including IRF540L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540L requirements.
6.How does Aetrix verify that IRF540L is sourced from the original manufacturer or authorized distributors?
All IRF540L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540L meets industry standards.
7.What is the process for return or replacement of IRF540L?
All IRF540L units undergo pre-shipment inspection (PSI). If there is an issue with IRF540L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF540L part is unused and in its original packaging.
Return procedure for IRF540L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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