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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF630L

Name: IRF630L
Brand: Vishay Siliconix
SKU: IRF630L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF630L.pdf

Description:: MOSFET N-CH 200V 9A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF630L from Vishay Siliconix is a 200 V, 9.0 A N-channel power MOSFET in TO-220AB package, optimized for hard-switched DC-DC converters and motor control stages where ruggedness, fast switching, and repetitive avalanche capability are required. It features 0.40 Ω R_DS(on) at V_GS = 10 V, 43 nC total gate charge, and 250 mJ single-pulse avalanche energy.

For engineers reviewing the IRF630L datasheet, IRF630L pinout, IRF630L application, or IRF630L equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.7 °C/W), body diode recovery metrics (t_rr = 170–340 ns), and real-world switching timing (t_d(on) = 9.4 ns, t_f = 20 ns) critical for layout and driver design.

Technical Context

The IRF630L operates as a voltage-controlled unidirectional switch with gate threshold voltage of 2.0–4.0 V and ±20 V maximum gate-source rating. Its dynamic dV/dt rating of 5.0 V/ns and built-in body diode support operation in inductive load circuits without external freewheeling diodes.

Designed for commercial-industrial power stages up to ~50 W dissipation, it leverages low R_thJC (1.7 °C/W) and flat-case thermal interface (R_thCS = 0.50 °C/W) to sustain continuous 5.7 A drain current at T_C = 100 °C while maintaining junction temperature below 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports bus voltages up to 160 V DC with 25 % safety margin
R_DS(on)	0.40 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 5.4 A continuous current
Q_g	43 nC - determines gate driver current requirement (~4.3 mA avg. for 100 kHz, 10 V swing)
E_AS	250 mJ - allows safe unclamped inductive turn-off in relay drivers or solenoid controls
t_r/t_f	28 ns / 20 ns - reduces switching transition losses in 50–200 kHz SMPS designs
V_SD	2.0 V @ I_S = 9.0 A - defines forward drop and power loss during synchronous rectification or body-diode conduction
R_thJC	1.7 °C/W - sets minimum heatsink requirement: ≤35 °C/W needed for 74 W P_D at T_J = 150 °C

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm lead-to-case clearance, and 10 lbf·in (1.1 N·m) screw torque rating.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <43 nC charge for full enhancement; input capacitance C_iss = 800 pF
D (Drain)	High-side power terminal	Connected to internal die substrate and metal tab; electrically tied to heatsink; rated for 200 V blocking
S (Source)	Reference node	Return path for load current; establishes V_GS reference; hosts body diode anode

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 9.0 A I_AR and 7.4 mJ E_AR under controlled pulse conditions-enables robust operation in flyback snubbers and relay coil suppression
Dynamic dV/dt immunity	5.0 V/ns rating prevents false turn-on during high-speed voltage transients in half-bridge configurations
Low gate charge asymmetry	Q_gd/Q_g = 53 % - improves Miller immunity and simplifies gate driver selection for hard-switched topologies
Body diode softness	t_rr = 170–340 ns with Q_rr = 1.1–2.2 nC - reduces EMI and voltage overshoot during inductive turn-off

Applications

Switch-Mode Power Supply	Motor Drive Stage
Use Scenario: Primary-side switch in 20–60 W offline flyback converter operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 160 V DC bus, delivering regulated 12 V/3 A output via transformer coupling. Use Value: 250 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off, eliminating need for external RCD clamp.	Use Scenario: Low-side driver in brushed DC motor H-bridge controlling 24 V, 5 A loads in industrial actuators. IC Role / Device Role / Timing Role: Ground-referenced switching element enabling PWM duty-cycle control and bidirectional current flow via complementary FETs. Use Value: 0.40 Ω R_DS(on) limits conduction loss to <1.0 W at full load, reducing heatsink size by 40 % vs. higher-R_DS(on) alternatives.
DC-DC Converter	Power Inverter Output
Use Scenario: Synchronous rectifier replacement in isolated 48 V–12 V buck converter for telecom shelf power. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode, driven by transformer-coupled gate signal synchronized to primary switch. Use Value: Body diode V_SD = 2.0 V ensures low forward drop during dead-time conduction, improving efficiency by 1.2 % over 40 V Schottky.	Use Scenario: Output stage switch in 100–500 W pure-sine-wave inverter converting 24 V battery to 115 V AC. IC Role / Device Role / Timing Role: Half-bridge leg device switching 200 V peak AC waveform with 50/60 Hz fundamental and high-frequency PWM carrier. Use Value: 200 V V_DS rating provides 25 % margin above 160 V DC bus, ensuring reliability under line surges and ringing.

Switch-Mode Power Supply

Motor Drive Stage

Use Scenario: Primary-side switch in 20–60 W offline flyback converter operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 160 V DC bus, delivering regulated 12 V/3 A output via transformer coupling.

Use Value: 250 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off, eliminating need for external RCD clamp.

Use Scenario: Low-side driver in brushed DC motor H-bridge controlling 24 V, 5 A loads in industrial actuators.

IC Role / Device Role / Timing Role: Ground-referenced switching element enabling PWM duty-cycle control and bidirectional current flow via complementary FETs.

Use Value: 0.40 Ω R_DS(on) limits conduction loss to <1.0 W at full load, reducing heatsink size by 40 % vs. higher-R_DS(on) alternatives.

DC-DC Converter

Power Inverter Output

Use Scenario: Synchronous rectifier replacement in isolated 48 V–12 V buck converter for telecom shelf power.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode, driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: Body diode V_SD = 2.0 V ensures low forward drop during dead-time conduction, improving efficiency by 1.2 % over 40 V Schottky.

Use Scenario: Output stage switch in 100–500 W pure-sine-wave inverter converting 24 V battery to 115 V AC.

IC Role / Device Role / Timing Role: Half-bridge leg device switching 200 V peak AC waveform with 50/60 Hz fundamental and high-frequency PWM carrier.

Use Value: 200 V V_DS rating provides 25 % margin above 160 V DC bus, ensuring reliability under line surges and ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 0.27 Ω R_DS(on), TO-220FP package (full-pack), lower Q_g (35 nC)	Better suited for 400 V bus systems; higher voltage rating trades off conduction loss at 200 V	Select when designing for universal input (85–265 V AC) flybacks requiring >400 V blocking
IRFZ44NPBF	55 V V_DS, 0.028 Ω R_DS(on), same TO-220AB package, higher ID (49 A)	Optimized for low-voltage, high-current motor drives; not rated for >100 V bus operation	Choose only for 12–48 V systems where sub-0.03 Ω on-resistance justifies reduced voltage capability

Compared with STP20NM50FP and IRFZ44NPBF, the IRF630L offers optimal balance of 200 V rating, 0.40 Ω R_DS(on), and proven avalanche ruggedness for 24–48 V industrial power stages-making it the preferred choice where moderate voltage headroom and field-proven reliability outweigh ultra-low R_DS(on) or extended voltage range.

Availability

IRF630L is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive stages, DC-DC converters, and power inverter outputs requiring stable component supply across long-lifecycle industrial programs.

Supply support for IRF630L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF630L belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, rugged switching in commercial-industrial power conversion where fast switching, low R_DS(on), and repetitive avalanche capability are essential.

FAQ

What is the maximum continuous drain current for IRF630L at 100 °C case temperature?

The IRF630L supports 5.7 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its R_thJC = 1.7 °C/W and maximum T_J = 150 °C. At T_C = 25 °C, the limit rises to 9.0 A. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions for reliable IRF630L operation.

Does IRF630L have a built-in body diode, and what are its key characteristics?

Yes, the IRF630L integrates a monolithic body diode with V_SD = 2.0 V at I_S = 9.0 A and T_J = 25 °C. Its reverse recovery time t_rr ranges from 170 to 340 ns, and Q_rr is 1.1–2.2 nC under standard test conditions (I_F = 5.9 A, dI/dt = 100 A/μs). These values confirm suitability for freewheeling in inductive loads but indicate it is not optimized for high-frequency synchronous rectification.

Can IRF630L be used in avalanche mode, and what energy level is rated?

Yes, the IRF630L is explicitly repetitive avalanche rated per its datasheet: I_AR = 9.0 A and E_AR = 7.4 mJ. It also specifies 250 mJ single-pulse avalanche energy (E_AS) under defined test conditions (V_DD = 50 V, L = 4.6 mH, R_g = 25 Ω). This ruggedness enables use in unclamped inductive switching applications such as relay drivers-without requiring external snubbers-provided pulse width and duty cycle remain within thermal limits.

What is the gate threshold voltage range for IRF630L, and how does it affect drive requirements?

The IRF630L has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. While it begins conducting near 2 V, full enhancement requires V_GS ≥ 10 V to achieve its rated R_DS(on) = 0.40 Ω. This means standard 5 V logic cannot fully turn on the IRF630L; a 10–15 V gate driver is necessary for low-loss operation. Gate leakage remains ≤±100 nA up to ±20 V, supporting simple resistor-based biasing where appropriate.

Is IRF630L RoHS-compliant, and what packaging options exist?

The IRF630L is not explicitly listed in the provided Vishay documentation, but its base part IRF630 is offered in RoHS-compliant variants: IRF630PbF (lead-free) and IRF630PbF-BE3 (lead-free and halogen-free), both in TO-220AB package. The "L" suffix may denote tape-and-reel or specific screening; confirmation requires Vishay's latest ordering matrix. For compliance-critical designs, specify IRF630PbF or IRF630PbF-BE3 to ensure RoHS and halogen-free conformance.

IRF630L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF630L FAQ

1.How can I place an order for IRF630L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630L reliable?

The price and inventory of IRF630L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630L is usually 5 days.

3.What payment methods are accepted for IRF630L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630L?

IRF630L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630L?

For technical support, including IRF630L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630L requirements.

6.How does Aetrix verify that IRF630L is sourced from the original manufacturer or authorized distributors?

All IRF630L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630L meets industry standards.

7.What is the process for return or replacement of IRF630L?

All IRF630L units undergo pre-shipment inspection (PSI). If there is an issue with IRF630L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630L part is unused and in its original packaging.

Return procedure for IRF630L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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