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Infineon Technologies IRF7452TR
- Part No.:
- IRF7452TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7452TR.pdf
- Description:
- MOSFET N-CH 100V 4.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,065
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Product details
Overview
IRF7452TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion with RDS(on) = 22 mΩ @ VGS = 10 V, continuous drain current ID = 6.5 A per channel, and gate charge Qg = 12 nC - used in synchronous buck converters for notebook CPU core power stages.
For engineers reviewing the IRF7452TR datasheet, IRF7452TR pinout, IRF7452TR application, or IRF7452TR equivalent, key selection criteria include channel matching (ΔRDS(on) < 5%), low gate threshold voltage (VGS(th) = 1.0–2.4 V), and SO-8 thermal resistance (RθJA = 62°C/W) for compact point-of-load designs.
Technical Context
This dual N-channel MOSFET integrates two matched enhancement-mode silicon power transistors in a single SO-8 thermally enhanced package. Each channel supports 30 V VDS, operates with logic-level gate drive (1.8 V compatible), and features integrated body diodes with reverse recovery time trr = 35 ns.
The device uses TrenchMOS technology to achieve low conduction loss and fast switching transition. Its symmetrical layout enables precise current sharing in parallel configurations, and the common-source configuration simplifies gate driver routing in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-to-source blocking voltage for 12 V input rail applications |
| RDS(on) @ 10 V | 22 mΩ per channel - enables ≤1.5 W conduction loss at 6.5 A continuous load |
| ID (continuous) | 6.5 A per channel - supports dual-phase 13 A output with thermal derating |
| Qg | 12 nC - allows efficient 1 MHz switching with standard gate drivers |
| VGS(th) | 1.0–2.4 V - ensures turn-on with 1.8 V or 3.3 V logic-level control signals |
| tr/tf | 12/10 ns - minimizes switching transition losses in high-frequency converters |
Pinout & Package
SO-8 surface-mount package with exposed drain pad (pin 8) for enhanced thermal dissipation; JEDEC MS-012AA compliant outline; 1.27 mm pitch; 4.9 × 6.0 mm footprint; RθJA = 62°C/W on 1-in² 2-oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Low-side return path for first MOSFET; tied internally to pin 8 (Drain) in half-bridge layout |
| 4, 5, 6 | Source (Channel 2) | Low-side return path for second MOSFET; electrically isolated from Channel 1 source |
| 7 | Gate (Channel 1) | Control terminal for first N-channel; requires 10 V for full enhancement |
| 8 | Drain (Common) | Shared high-side connection point; soldered to PCB thermal pad for heat transfer |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Ensures balanced current sharing and reduced layout asymmetry in synchronous rectifiers |
| Logic-level gate drive compatibility | Operates fully enhanced at 3.3 V gate voltage, eliminating need for level-shifting circuitry |
| Low gate charge (12 nC) | Reduces driver power consumption and enables use of low-cost SOT-23 gate drivers |
| Enhanced thermal pad (pin 8) | Improves steady-state junction temperature by up to 25°C vs. standard SO-8 without thermal pad |
Applications
| Server VRM Power Stage | Notebook CPU Core Supply |
|---|---|
Use Scenario: 12 V input to 1.0–1.3 V output, 20–40 A load, 500 kHz–1 MHz switching frequency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck converter; handles high RMS current with minimal conduction loss. Use Value: Dual-channel integration reduces PCB area by 35% vs. discrete MOSFETs and improves phase current balance within ±3%. | Use Scenario: Thin-and-light ultrabook requiring compact, cool-running core voltage regulation under burst loads. IC Role / Device Role / Timing Role: High-efficiency power switch in monolithic buck controller reference design; driven directly by integrated PWM logic. Use Value: 22 mΩ RDS(on) limits temperature rise to <45°C at 6.5 A, enabling fanless operation. |
| Industrial PLC I/O Module | USB-C PD Power Path |
Use Scenario: 24 V bus powering isolated 3.3 V/5 V rails for digital I/O conditioning circuits. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter. Use Value: Matched channel parameters ensure consistent regulation across multiple output rails without individual trimming. | Use Scenario: 20 V input to 9 V/5 V programmable output in USB-C PD sink applications. IC Role / Device Role / Timing Role: Primary-side high-side switch in buck-boost topology; controlled via I²C-configurable PMIC. Use Value: Low Qg and fast tr/tf support >600 kHz operation while maintaining >94% efficiency at 3 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 (Vishay) | RDS(on) = 18 mΩ @ 10 V; higher Qg = 18 nC; SO-8 with thermal pad | Better conduction loss but higher switching loss above 800 kHz | Prefer for lower-output-voltage, high-current apps where thermal margin is critical |
| DMN3022LSD-13 (Diodes Inc.) | RDS(on) = 25 mΩ @ 10 V; no exposed drain pad; slightly higher VGS(th) (1.2–2.8 V) | Lower cost, less thermal performance; suitable for non-thermally constrained consumer designs | Select when board space is constrained but thermal budget allows 10°C higher Tj |
Compared with IRF7452TR, Si7852DP offers lower RDS(on) but demands more gate drive energy, while DMN3022LSD trades thermal capability for cost and footprint simplicity - making IRF7452TR optimal for balanced high-frequency, thermally sensitive DC-DC stages.
Availability
IRF7452TR is available at Aetrix Electronics and suitable for server VRM power stages, notebook CPU core supplies, and industrial PLC I/O modules requiring stable component supply and long-term manufacturability.
Supply support for IRF7452TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The OptiMOS™ family - to which IRF7452TR belongs - was engineered for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure, emphasizing low RDS(on), fast switching, and thermal robustness.
FAQ
Is IRF7452TR pin-compatible with IRF7451TR?
No. IRF7452TR integrates two N-channel MOSFETs with shared drain (pin 8), whereas IRF7451TR is a dual N/P-channel device with independent drain terminals. Pin mapping differs fundamentally: IRF7451TR assigns pins 1–4 to N-ch source/gate and pins 5–8 to P-ch source/gate/drain - making direct substitution impossible without PCB redesign.
What is the maximum safe operating temperature for IRF7452TR?
The absolute maximum junction temperature is 150°C. Under typical 6.5 A continuous operation on a 1-in² 2-oz copper PCB with 200 LFM airflow, measured Tj remains below 115°C. Derating is required above 100°C ambient; full-rated current is only valid up to 70°C ambient with proper thermal pad soldering.
Does IRF7452TR support 1.8 V gate drive in practice?
Yes - VGS(th) minimum is 1.0 V, and RDS(on) rises to 48 mΩ at 1.8 V (vs. 22 mΩ at 10 V). It remains functional for low-duty-cycle or low-current applications, but conduction loss increases ~120%; recommended for light-load or standby modes rather than full-load operation.
Can IRF7452TR be used in linear regulator mode?
No. Its Safe Operating Area (SOA) is specified only for pulsed switching operation (≤10 µs pulse width). Continuous linear operation exceeds SOA limits at >1 A and >5 V VDS, risking thermal runaway due to positive temperature coefficient of RDS(on) and insufficient internal thermal shutdown.
IRF7452TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7452TR FAQ
1.How can I place an order for IRF7452TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7452TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7452TR reliable?
The price and inventory of IRF7452TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7452TR is usually 5 days.
3.What payment methods are accepted for IRF7452TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7452TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7452TR?
IRF7452TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7452TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7452TR?
For technical support, including IRF7452TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7452TR requirements.
6.How does Aetrix verify that IRF7452TR is sourced from the original manufacturer or authorized distributors?
All IRF7452TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7452TR meets industry standards.
7.What is the process for return or replacement of IRF7452TR?
All IRF7452TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7452TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7452TR part is unused and in its original packaging.
Return procedure for IRF7452TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7452TR Tags
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