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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF9510L MOSFET P-CH 100V 4A I2PAK Vishay Siliconix	9,991	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9520L MOSFET P-CH 100V 6.8A I2PAK Vishay Siliconix	4,051	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9520NSTRL MOSFET P-CH 100V 6.8A D2PAK Infineon Technologies	4,285	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	480mOhm @ 4A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	350 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF9530L MOSFET P-CH 100V 12A I2PAK Vishay Siliconix	7,270	RFQ	-	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	10V	300mOhm @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9540L MOSFET P-CH 100V 19A I2PAK Vishay Siliconix	5,494	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9540STRR MOSFET P-CH 100V 19A D2PAK Vishay Siliconix	3,664	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	3.7W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9610STRL MOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix	7,837	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	3W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9610STRR MOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix	2,194	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	3W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9620L MOSFET P-CH 200V 3.5A I2PAK Vishay Siliconix	9,461	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.5A (Tc)	10V	1.5Ohm @ 1.5A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	350 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF9Z24NSTRR MOSFET P-CH 55V 12A D2PAK Infineon Technologies	6,721	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	12A (Tc)	10V	175mOhm @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF9Z34NSTRR MOSFET P-CH 55V 19A D2PAK Infineon Technologies	3,224	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFBC30STRR MOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix	9,955	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4V @ 250µA	31 nC @ 10 V	±20V	660 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFBC40LCS MOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix	6,106	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	10V	1.2Ohm @ 3.7A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFBE20L MOSFET N-CH 800V 1.8A I2PAK Vishay Siliconix	6,664	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	1.8A (Tc)	10V	6.5Ohm @ 1.1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	530 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRFBE30STRL MOSFET N-CH 800V 4.1A D2PAK Vishay Siliconix	5,005	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFBF30L MOSFET N-CH 900V 3.6A I2PAK Vishay Siliconix	3,033	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	3.7Ohm @ 2.2A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1200 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRFI610G MOSFET N-CH 200V 2.6A TO220-3 Vishay Siliconix	6,149	RFQ	-	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	2.6A (Ta)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3
IRFL024NTR MOSFET N-CH 55V 2.8A SOT223 Infineon Technologies	3,648	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	2.8A (Ta)	10V	75mOhm @ 2.8A, 10V	4V @ 250µA	18.3 nC @ 10 V	±20V	400 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRFR010TRR MOSFET N-CH 50V 8.2A DPAK Vishay Siliconix	5,792	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50 V	8.2A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	10 nC @ 10 V	±20V	250 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR18N15DTRL MOSFET N-CH 150V 18A DPAK Infineon Technologies	8,019	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	18A (Tc)	10V	125mOhm @ 11A, 10V	5.5V @ 250µA	43 nC @ 10 V	±30V	900 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)

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