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Vishay Siliconix IRF9610STRR
- Part No.:
- IRF9610STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9610STRR.pdf
- Description:
- MOSFET P-CH 200V 1.8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,194
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Product details
Overview
IRF9610STRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 3 Ω on-resistance at VGS = -10 V, 11 nC total gate charge, and -1.8 A continuous drain current at TC = 25 °C. It serves as a high-voltage, low-current switching device in DC-DC converters and industrial power control circuits.
For engineers reviewing the IRF9610STRR datasheet, IRF9610STRR pinout, IRF9610STRR application, or IRF9610STRR equivalent, key selection criteria include its -200 V blocking capability, dynamic dV/dt rating of -5 V/ns, body diode reverse recovery time of 240–360 ns, and suitability for high-temperature operation up to +150 °C junction temperature.
Technical Context
This MOSFET employs a third-generation silicon process optimized for ruggedized fast switching and low RDS(on) in high-voltage P-channel configuration. Its design supports ease of paralleling due to positive temperature coefficient of on-resistance and simple gate drive requirements with ±20 V maximum gate-source voltage rating.
The device features an integrated body diode with 240–360 ns reverse recovery time and 1.7–2.6 μC reverse recovery charge, enabling reliable operation in inductive switching applications such as clamped inductive loads and motor control H-bridge topologies where synchronous rectification is not required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 100–150 V DC bus systems without derating. |
| RDS(on) | 3 Ω @ VGS = -10 V - Enables <1.8 W conduction loss at -0.9 A continuous current. |
| Qg | 11 nC - Requires moderate gate drive energy; compatible with standard logic-level drivers. |
| ID (cont.) | -1.8 A @ TC = 25 °C - Suitable for low-power auxiliary supplies and bias rails. |
| TJ Range | -55 to +150 °C - Certified for extended industrial and automotive under-hood environments. |
| dV/dt Rating | -5 V/ns - Resists false turn-on during high-slew-rate transients in noisy power systems. |
| RthJC | 6.4 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad for 20 W dissipation. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) with lead (Pb)-free and halogen-free construction per RoHS Directive 2011/65/EU.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Exposed Pad) | Drain (D) | Primary high-voltage terminal; electrically and thermally connected to PCB copper pour for heat dissipation and low-inductance return path. |
| Pin 2 | Gate (G) | Control input requiring -10 V for full enhancement; gate leakage ≤ ±100 nA ensures low static power consumption. |
| Pin 3 | Source (S) | Reference node for gate drive; connects to load return or system ground in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry in low-power DC-DC topologies. |
| Dynamic dV/dt rating (-5 V/ns) | Prevents spurious turn-on during rapid voltage transients common in flyback and resonant converters. |
| Fast switching (td(on) = 8 ns, tf = 8 ns) | Reduces switching losses in PWM frequencies up to 500 kHz while maintaining EMI control. |
| Body diode with trr = 240–360 ns | Supports freewheeling in inductive loads without external diode in non-synchronous buck or half-bridge designs. |
| Ruggedized die design | Withstands repetitive avalanche energy per fig. 4 SOA, enabling robust operation under overload conditions. |
Applications
| Industrial Power Supply Control | Automotive Body Control Module |
|---|---|
Use Scenario: High-side switch for 24 V auxiliary rail sequencing in programmable logic controller (PLC) backplanes. IC Role / Device Role / Timing Role: P-channel MOSFET acting as load switch with controlled turn-on/turn-off timing via gate resistor network. Use Value: -200 V rating provides 3× safety margin over 24 V nominal bus; RDS(on) = 3 Ω limits self-heating to <5 °C rise at 1 A load. | Use Scenario: Reverse polarity protection and load disconnect in vehicle door module power distribution. IC Role / Device Role / Timing Role: High-side protection switch placed between battery feed and microcontroller subsystem. Use Value: -55 to +150 °C operating range meets AEC-Q101 ambient requirements; body diode blocks reverse current during jump-start events. |
| Medical Equipment Bias Supply | Telecom DC-DC Converter |
Use Scenario: Isolated bias supply enable switch in portable ultrasound imaging front-end power tree. IC Role / Device Role / Timing Role: Controlled startup switch for isolated flyback auxiliary winding output. Use Value: Low Qg = 11 nC enables clean soft-start using RC gate delay; dV/dt immunity prevents false triggering from EMI-coupled noise. | Use Scenario: Synchronous rectifier replacement in 48 V input telecom DC-DC brick secondary side. IC Role / Device Role / Timing Role: Low-current P-channel switch controlling gate of N-channel main FET in active clamp topology. Use Value: Fast tf = 8 ns and low Ciss = 170 pF minimize dead-time losses; TO-263 package supports automated reflow assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF9610STRR-GE3 | Same die, identical RDS(on), Qg, and VDS; differs only in RoHS-compliant plating (NiPdAu vs. Pb-free Sn). | No functional difference; qualified for same industrial and automotive applications. | Select when lead-free compliance is mandatory and JEDEC-standard plating is required. |
| IRF9530NPBF | Higher RDS(on) (0.3 Ω), lower VDS (-100 V), TO-220 package; 3× higher continuous current (-12 A). | Not suitable for -200 V systems; requires through-hole mounting and larger heatsink. | Choose only if voltage rating can be reduced and board space allows through-hole layout. |
Compared with SiHF9610STRR-GE3, IRF9610STRR offers identical electrical performance but different termination finish; compared with IRF9530NPBF, it trades current capacity and package form factor for higher voltage rating and surface-mount compatibility-making IRF9610STRR optimal for compact, high-voltage, low-current switching where PCB real estate and thermal management via D2PAK pad are critical.
Availability
IRF9610STRR is available at Aetrix Electronics and suitable for industrial power supply control, automotive body electronics, medical equipment bias supplies, and telecom DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IRF9610STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRF9610STRR belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered specifically for industrial and automotive applications demanding stable operation at elevated temperatures and high dV/dt stress.
FAQ
What is the maximum continuous drain current rating for IRF9610STRR at 100 °C case temperature?
The IRF9610STRR has a maximum continuous drain current of -1 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the target application.
Does IRF9610STRR support logic-level gate drive?
No, IRF9610STRR is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from -2 V to -4 V, and it requires -10 V gate-source voltage to achieve RDS(on) = 3 Ω. Driving it with 3.3 V or 5 V logic signals will result in incomplete enhancement and excessive conduction loss; a dedicated negative gate driver or level shifter is required.
What is the thermal resistance from junction to case (RthJC) for IRF9610STRR?
The IRF9610STRR has a maximum junction-to-case (drain) thermal resistance of 6.4 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper soldering of the exposed drain pad to a minimum 1"² copper area on FR-4 PCB, enabling up to 20 W power dissipation at TC = 25 °C.
Can IRF9610STRR be used in avalanche-rated applications?
Yes, the IRF9610STRR is characterized for repetitive avalanche operation, as confirmed by the Safe Operating Area (SOA) curve in Figure 4 of the datasheet. Its ruggedized third-generation die design supports controlled avalanche energy dissipation, making it suitable for inductive switching circuits where voltage overshoot may occur during turn-off.
Is IRF9610STRR RoHS-compliant?
Yes, IRF9610STRR is RoHS-compliant and halogen-free, as indicated by the "PbF" suffix and confirmed in the Ordering Information table. It uses lead-free terminations and complies with EU Directive 2011/65/EU, with material categorization documented in Vishay document 99912.
IRF9610STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 20W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9610STRR FAQ
1.How can I place an order for IRF9610STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9610STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9610STRR reliable?
The price and inventory of IRF9610STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9610STRR is usually 5 days.
3.What payment methods are accepted for IRF9610STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9610STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9610STRR?
IRF9610STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9610STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9610STRR?
For technical support, including IRF9610STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9610STRR requirements.
6.How does Aetrix verify that IRF9610STRR is sourced from the original manufacturer or authorized distributors?
All IRF9610STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9610STRR meets industry standards.
7.What is the process for return or replacement of IRF9610STRR?
All IRF9610STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9610STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9610STRR part is unused and in its original packaging.
Return procedure for IRF9610STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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